• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.687-693
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• 1992

To improve dielectric, piezoelectric and temperature stability in 0.50Pb(SnS11/2TSbS11/2T)OS13T - 0.35PbTiOS13T - 0.60PbZrOS13T + 0.4[wt%]MnOS12T piezoelectric ceramics which is used for surface acoustic wave devices, CrS12TOS13T was added and the specimens were fabricated by Hot Press method, and their characteristics were measured with CrS12TOS13T addition. From the results, in the specimen added by 0.2[wt%]CrS12TOS13T, dielectric constant and mechanical quality factor were 380 and 2307, respectively, and it was suited for surface acoustic wave device and the temperature coefficient of the resonant frequency in the specimen added by 0.4[wt%]CrS12TOS13T was the least value of 74.96[ppm/$^{\circ}C$].

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.25-33
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• 1994

Temperature dependences of the remanent polarization $P_{\gamma}$/(T), effective birefringence ㅿｎ(T). dielectric constant K(T) and quadratic electro-optic coefficient R(T) of the two-stage sintered xBa(La$_{1/2}$Nb$_{1/2}$)O$_3$Pb$(Zr_{y}Ti_{1-y})O-{3}$(x=0.085, 0.09, 0.40$\leq$y$\leq$0.70)ceramics were investigated. Increasing the PbZrO$_3$ contents, the crystal structure of a specimen was varied from tetragonal and rhombohedral to cubic, and the phase transition was showed a diffuse phase transition(DPT) characteristics. Especially. in the compositions which located on the PE-FE phase boundary were showed a discrepancy between curie temperature and temperature range which a macroscopic polarization and a effective birefringence were disappeared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.188-191
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• 2000

The properties of piezoelectric and dielectric for 0.05Pb(Mn$\_$0.4/W$\_$0.2/Nb$\_$0.4/)O$_3$ - 0.95PbZr$\_$x/Ti$\_$1-x/O$_3$ compositions have been investigated. In the composition of 0.05Pb(Mn$\_$0.4/W$\_$0.2/Nb$\_$0.4/)O$_3$ - 0.95PbZr$\_$0.51/Ti$\_$0.49/O$_3$, the values of k$\_$p/ and $\varepsilon$$\_$33/$\^$T// $\varepsilon$$\_$0/ are maximized, but Q$\_$m/ was minimized (k$\_$p/=56.5[%], Q$\_$m/=1130, d$\_$33/=258[pC/N], $\varepsilon$$\_$33/$\^$T// $\varepsilon$$\_$0/=1170). The grain size was suppressed and the uniformity of grain was improved at the 1100[˚C]. Also, we can see the dielectric constants variations between the before poling and after poling. This effect results from the effect(increase element of dielectric constants) between dipole switching and electrostriction inducing stress and dipole direction to the poling orientation(decrease element of dielectric constants). At x=0.51, we can find MPB(morphotropic phase boundary).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.661-664
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• 1999

The piezoelectric properties and the doping effect of Nb$_2$O$_{5}$ for 0.95 PbZr$_{x}$ Ti$_{1-x}$ -O$_3$+0.05 Pb(Mnsub 1/3/Nb$_{2}$3/)O$_3$ compositions have been investigated. In the composition of 0.95PbZr$_{0.51}$Ti$_{0.49}$O$_3$+0.05Pb(Mn$_{1}$3/Nb/syb 2/3/)O$_3$ the values of k$_{p}$ and $\varepsilon$$_{33}$ $^{T}$ are maximized, but Q$_{m}$ was minimized (k$_{p}$ =0.57, Q$_{m}$ =1550). The grain size was suppressed and the uniformity of grain was improves with doping concentration of Nb$_2$O$_{5}$ far 0.95PbZr$_{0.51}$Ti$_{0.49}$O$_3$+0.05Pb(Mn$_{1}$3/Nb/syb 2/3/)O$_3$. sample. The values of k$_{p}$ first decreased slightly when a small amount of Nb$^{5+}$ is doped and then decreased when the Nb$^{5+}$ concentration is further increased. The Q$_{m}$ . OR the Other hand. increased monotonously with doping concentration of Nb$_2$O$_{5}$ .{5}$ . .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.327-329
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• 2005

Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃(PZT) thin films were deposited by using a pulsed laser deposition method on a Pt/Ti/SiO₂/Si substrate with (Pb/sub 0.72/La/sub 0.28/)Ti/sub 0.93/O₃ (PLT) buffer and on a Pt/Ti/SiO₂/Si substrate without buffer. These films were annealed in H₂-contained ambient for 30 minutes at the substrate temperature of 400。C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out, which are shown that ferroelectric properties, such as remanent polarization didn't change in the case of PLT buffered PZT film while remanent polarization value of PZT film degraded from 20.8 C/㎠ to 7.3 C/㎠. The leakage current became higher in both cases, but that of the more-oriented PZT film had the moderate value of the 10/sup -6/ order of A/㎠. This is mainly because the hydrogen atoms which make the degradation of PZT films cannot infiltrate into the more -oriented PZT film as well as the less-oriented PZT film.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.546-552
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• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_{2}$$O_{3}$와 BN을 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 BaT$iO_{3}$ PTCR 재료에 $Bi_{2}$$O_{3}$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_{2}$$O_{3}$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 Y-BaT$iO_{3}$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다.$Bi_{2}$$O_{3}$ 결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 BaT$iO_{3}$에 고용이 되지 않는 것으로 밝혀졌으며 $B_{2}$O/wub/3를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로서 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.502-507
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• 1992

To improve temperature stability, 0.05Pb(SnS11/2TSbS11/2T)OS13T-0.35PbTiOS13T-0.60PbZrOS13T+0.4[wt%]MnO S12T piezoelectic ceramics were manufactured with the addition of CrS12TOS13T by Hot Press method. And the SAW delay line was fabricated and effects of CrS12TOS13T to the propagation characteristics of SAW was investigated, and the SAW filter was fabricated on C4 specimen added by 0.2[wt%] CrS12TOS13T whose propagation characteriatics of surface acoustic wave were the bast and its frequency characteristics was investigated. Electromechancal coupling factor(kS1sTS02T) was 3.11[%] and its temperature coefficient of the center frequency(CS1foT)was -21.27[ppm/$^{\circ}C$] in C4. The 31[MHz]]SAW IF filter of C4 scarcely had diffraction phenomena and therefore it was proper.

• Fire Science and Engineering
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• v.9 no.2
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• pp.29-36
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• 1995

In this study, the effect of Mn $O_2$ additive on the electrical characteristics of PZN-PSS-PZT Pyroelectric materials for the fire detactor was studies. PZT ceramics used this experimental is 4 composite system $[$Pb(Z $n_{1}$3/ N $b_{2}$3/) $O_3$＋Pb(S $n_{1}$3/ S $b_{2}$3/) $O_3$＋PbTi $O_3$＋PbZr $O_3$$]$The dielectric constants and dissipation factors decreases as to Mn $O_2$ concentration increases. At the Mn $O_2$ 0.5($\omega$t%), Pyroelectric coefficient shows 8(10$^{-8C}$$\textrm{cm}^2$$^{\circ}C$) which have the highst value among other additive contents. It is found that output voltage shows maximum peck at Mn $O_2$0.7($\omega$t％) is associated with the higher pyroelectric coefficient and Lowered dielectric constant.t.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.