• 한국세라믹학회지
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• 제35권7호
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• pp.715-720
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• 1998

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.201-204
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• 2009

$BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1586-1588
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• 2003

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

• 한국세라믹학회지
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• 제35권8호
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• pp.791-794
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• 1998

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.67-67
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• 2001

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.606-610
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• 1995

In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.