• 제목/요약/키워드: Pb(Zr, Ti)O$_3$ thin

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Sol-Gel 법에 의한 Pb(Zr, Ti)${O}_{3}$ 박막의 제조 및 구조적 특성 (Preparation and structural properties of the Pb(Zr, Ti)${O}_{3}$ thin film by Sol-Gel method)

  • 이영준;정장호;이성갑;이영희
    • 대한전기학회논문지
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    • 제44권7호
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    • pp.914-918
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    • 1995
  • In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

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저온도포열분해에 의해 제조된 Pb(Zr, Ti)O$_3$ 박막의 에피탁시와 결정화도에 미치는 전열처리 시간의 영향 (Effect of Prefiring Time on Epitaxy and crystallinity of Pb(Zr, Ti)O$_3$ Thin Films in Low Temperature Pyrolysis)

  • 황규석;이형민;김병훈
    • 한국세라믹학회지
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    • 제35권9호
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    • pp.969-973
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    • 1998
  • Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

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Atmosphere Effects in Low Temperature Pyrolysis of Chemical Solution Derived Pb(Zr, Ti) O3 Films

  • Hwang, Kyu-Seog;Lee, Hyung-Min;Kim, Byung-Hoon
    • The Korean Journal of Ceramics
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    • 제4권3호
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    • pp.199-203
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    • 1998
  • $Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

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압전 MEMS 진동에너지 수집소자를 위한 졸겔 공법기반의 Pb(ZrTi)O3 박막의 특성 분석 및 평가 (Characterization of Sol-gel Coated Pb(ZrTi)O3 Thin film for Piezoelectric Vibration MEMS Energy Harvester)

  • 박종철;박재영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1240_1241
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    • 2009
  • In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

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Sol-Gel법에 의한 Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$박막의 제조 및 강유전 특성 (Preparing and Ferroelectric Properties of the Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ Thin Film by Sol-Gel Method.)

  • 이영준;정장호;이성갑;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 추계학술대회 논문집
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    • pp.168-170
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    • 1994
  • Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

Sol-Gel 법으로 제조한 $Pb(Zr_{0.52}Ti_{0.48})O_3$ 박막의 유전 특성 (Dielectric Properties of the $Pb(Zr_{0.52}Ti_{0.48})O_3$ Thin Film by Sol-Gel Method.)

  • 정장호;이영준;이성갑;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1454-1456
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    • 1994
  • $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

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R.F. Magnetron Sputtering으로 다양한 Interlayer 층위에 형성시킨 PZT 박막의 미세구조와 강유전 특성 (Microstructure and Ferroelectric Properties of PZT Thin Films Deposited on various Interlayers by R.F. Magnetron Sputtering)

  • 박철호;최덕영;손영국
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.742-749
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    • 2002
  • R. F. magnetron sputtering법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target을 사용하여 박막을 제조하였다. Interlayer(PbO, $TiO_2$, PbO/$TiO_2$)층을 삽입함으로써 박막의 결정성을 향상시켰고, 박막의 기판온도도 상당히 낮출 수 있었다. 순수한 PZT에 비하여 interlayer를 삽입한 PZT는 높은 유전상수과 낮은 유전손실 및 높은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. 이러한 PZT 박막과 interlayer 층은 증착온도에서 서로 반응하여 하나의 고용체를 이루지 않고, 각각 독립적인 층으로 존재함을 XPS 분석을 통해 확인하였다. 여러 interlayer중 특히 PbO/$TiO_2$는 우수한 유전특성(${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$)을 나타내었고 가장 효과적인 seed로써의 역할을 하였다.

Sol-gel법에 의한 $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$박막의 물리적 특성 (Physical properties of $PbZrO_3-PbTiO_3-Pb(Ni_{1/3}Nb_{2/3})O_3$ thin films by sol-gel method)

  • 임무열;구경완;김성일;유영각
    • E2M - 전기 전자와 첨단 소재
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    • 제9권10호
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    • pp.991-1000
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    • 1996
  • PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

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Epitaxial Growth of Pb(Zr, Ti)$O_3$Thin Films on $LaAlO_3$ Substrates by Dipping-Pyrolysis Process

  • Hwang, Kyu-Seog;Kim, Byung-Hoon
    • The Korean Journal of Ceramics
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    • 제3권4호
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    • pp.253-256
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    • 1997
  • Epitaxially grown Pb(Zr, Ti)O$_3$thin films were prepared on LaAlO$_3$substrates by the dipping pyrolysis process using metal naphthenates as starting materials Homogeneous Pb-Zr-Ti solutions with toluene were spin-coated onto the substrates and pyrolyzed at 50$0^{\circ}C$ Highly oriented Pb(Zr, Ti)O$_3$films confirmed by X-ray diffraction $\theta$-2$\theta$ scans were obtained by heat-treated at 75$0^{\circ}C$ in air The X-ray pole-figure analysis and reciprocal-space mapping of the resulting 0.6$\mu\textrm{m}$ films showed that the thin films comprising the c-axis oriented tetragonal phase have an epitaxial relationship with the LaAlO$_3$substrates.

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Sol-Gel법에 의한 Pb($Zr_{0.52}Ti_{0.48}$)$O_3$박막의 유전 및 전기적 특성 (Dielectric and Electrical Properties of the Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ Thin Film by Sol-Gel Method.)

  • 정장호;류기원;배선기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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    • pp.14-16
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    • 1995
  • Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.

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