• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.410.1-410.1
• /
• 2016

Vanadium dioxide ($VO_2$) is a well-known material that exhibits a metal-semiconductor transition at 340 K, with drastic change of transmittance at NIR region. However, $VO_2$ based thermochromics accompany with low visible transmittance value and unfavorable color (brownish yellow). Herein, we demonstrate the adjustment of visible transmittance of $VO_2$ thin film by nanosphere template assisted patterning process using sol-gel method. 2-Dimenstional honeycomb shape was varied as function of diameter of nanosphere and coating conditions. The morphological geometry of the films was investigated by FE-SEM and AFM. Result shows that inversed shape of nanosphere was formed clearly and pattern width was altered according to the bead size. This structure creates the geometrical blank area from the position of nanosphere which improves the optical transmittance at the visible region. Moreover, such patterned $VO_2$ thin film not only maintains the optical switching efficiency, but also generate the gorgeous scattering effect which presumably support the glazing application.

• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.1
• /
• pp.13-17
• /
• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.316-316
• /
• 2010

Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.506-508
• /
• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Applied Chemistry for Engineering
• /
• v.16 no.6
• /
• pp.853-856
• /
• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.

• Journal of the Korean Magnetics Society
• /
• v.18 no.2
• /
• pp.49-53
• /
• 2008

Magnetic and crystallographic properties of patterned media fabricated by nanoimprint lithography and Co-Pt electroplating were studied. Thin films of Ru(20 nm)/Ta(5 nm)/$SiO_2$(100 nm) were deposited on Si(100) wafer and then 25 nm hole pattern was fabricated by nanoimprint lithography on substrate. The electroplated Co-Pt nano-dots have the diameter of 35 nm and the height of 27 nm. Magnetic dot patterns of Co-Pt alloy were created using electroplated Co-Pt alloy and then their properties were measured by MFM, SQUID, SEM, TEM and AFM. We observed single domain with perendicular anisotropy for each dot and achieved optimum coercivity of 2900 Oe. These results mean that patterned media fabricated by nanoimprint lithography and electroplating have good properties in view of extending superparamagnetic limit while satisfying the writability requirements with the present write heads.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.10a
• /
• pp.371-376
• /
• 2003

The hot embossing process has been mentioned as one of major nanoreplication techniques. This is due to its simple process, low cost, high replication fidelity and relatively high throughput. As the initial step of quantitating the embossing process, simple parametric study about embossing time have been carried out using high-resolution masters which patterned by the DRIE process and laser machining. Under the various embossing time, the viscous flow of thin PMMA films into microcavities during Compression force has been investigated. Also, a study about simulating the viscous flow during embossing process has planned and continuum scale FDM analysis was applied on this simulation. With currently available test data and condition, simple FDM analysis using FLOW3D was made attempt to match simulation and experiment.

• Proceedings of the KSME Conference
• /
• 2003.04a
• /
• pp.1036-1042
• /
• 2003

The hot embossing process has been mentioned as one of major nanoreplication techniques. This is due to its simple process, low cost, high replication fidelity and relatively high throughput. As the initial step of quantitating the embossing process , simple parametric study about embossing time have been carried out using high-resolution masters which patterned by the DRIE process and laser machining. Under the various embossing time, the viscous flow of thin PMMA films into microcavities during compression force has been investigated. Also, a study about simulating the viscous flow during embossing process has planned and continuum scale FDM analysis was applied on this simulation. With currently available test data and condition, simple FDM analysis using FLOW3D was made attempt to match simulation and experiment.

• Progress in Superconductivity and Cryogenics
• /
• v.4 no.1
• /
• pp.89-93
• /
• 2002

We investigated the resistance distribution n 4"diameter SFCLS. $YBa_2CU_3O_7$ films coated in-situ with a gold layer were patterned into 3 mm wide 142 cm long meander lines by Photolithography. The limiters were tested with simulated fault currents. The resistance was uniform all over the film except at the edge. At lower source voltages, CFCLs did not quench simultaneously and the resistance distribution was less uniform. Compared with 2" diameter SFCLS 4" SFCLS had similar values and time dependence of resistivity at similar electric fields The resistance distribution was more uniform in 4" SFCLS. The area at the edge where the distribution was not uniform was around 3 mm wide in SFCLs of both sizes. The experimental results were quantitatively explained with a heat transfer concept.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2000.02a
• /
• pp.139-142
• /
• 2000

We fabricated resistive superconducting fault current limiters based on $YBa_{2}Cu_{3}O_{7}$ thin films and investigated position dependence of quench progress. The $YBa_{2}Cu_{3}O_{7}$ film was coated insitu with a gold layer and patterned into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents. Quench progress depended significantly on the position in the limiter with respect to electrodes. The limiters quenched fastest at the part farthest from the electrodes. the limiters quenched fastest at the part farthest from the electrodes and slowest next to the electrodes. This phenomenon was more prominent near the minimum quench current. At high fault current the quench started simultaneously on all parts of the limiters and the subsequent progress of quench depended only weakly on the position. The heat transfer from limiter meander lines to electrodes explains these results.