• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.803-808
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• 2016

In this work, one dimension $In_2O_3$ nanostructures as detecting materials for indoor toxic gases were synthesized by an electrospinning process. The morphology of electrospun $In_2O_3$ nanofibers was controlled by electrolyte composition, applied voltage and working distance between a nozzle and a substrate. The synthesized $In_2O_3$ nanofibers-based paste with/without carbon black additives was prepared for the integration on a sensor device. The integration of $In_2O_3$ sensing materials was conducted by a hand-printing of the paste into the interdigit Au electrodes patterned on Si wafer. Gas sensing properties on CO and HCHO gases were characterized at $300^{\circ}C$. The evaluated sensing properties such as sensitivity, response time and recovery time were improved in $In_2O_3$ nanofiber pastes with carbon black, compared to the paste without carbon black.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.841-845
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• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.96-104
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• 2010

We suggest here a cost-effective replica fabrication method for transparent and hard molds for imprinting lithography such as NIL and S-FIL. The process starts with the use of a replica hard mold from a master, using a polymer copy as a carrier. The polymer copy as a carrier was treated by soluble process for forming anti-adhesion layer. Duplicated hard molds can eliminate direct contact between a hard master and a patterned polymer on a substrate and the generated contamination of a master during the imprinting process. The replica hard mold exhibits the glass-like properties introduced here, such as transparency and hardness, make it appropriate for nanoimprint lithography and step-and-flash imprint lithography.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.21-25
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• 2009

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.365-365
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• 2010

Similar to the superhydrophobic surfaces of lotus leaf, water strider leg is attributed to hierarchical structure of micro pillar and nano-hair coated with low surface energy materials, by which water strider can run and even jump on the water surface. In order to mimick its leg, many effort, especially, on the fabrication of nanohairs has been made using several methods such as a capillarity-driven molding and lithography using poly(urethane acrylate)(PUA). However most of those effort was not so effective to create the similar structure due to its difficulty in the fabrication of nanoscale hairy structures with hydrophobic surface. In this study, we have selected a low surface energy polymeric material of polytetrafluoroethylene (PTFE, or Teflon) assisted with surface modification of CF4 plasma treatment followed by hydrophobic surface coating with pre-cursor of hexamethyldisiloxane (HMDSO) using a plasma enhanced chemical vapor deposition (PE-CVD). It was found that the plasma energy and duration of CF4 treatment on PTFE polymer could control the aspect ratio of nano-hairy structure, which varying with high aspect ratio of more than 20 to 1, or height of over 1000nm but width of 50nm in average. The water contact angle on pristine PTFE surface was measured as approximately $115^{\circ}$. With nanostructures by CF4 plasma treatment and hydrophobic coating of HMDSO film, we made a superhydrophobic nano-hair structure with the wetting angle of over $160^{\circ}C$. This novel fabrication method of nanohairy structures has been applied not only on 2-D flat substrate but also on 3-D substrates like wire and cylinder, which is similarly mimicked the water strider's leg.

• Journal of Biomedical Engineering Research
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• v.40 no.5
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• pp.165-170
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• 2019

Cancer cells are different from normal cells in terms of life cycle, behavior, and growth patterns. Cancer cells can migrate freely in the body through blood vessels and lymph nodes. The cancer cells easily interact with various substrates including extracellular matrix and vessels and they can differentiate in the new environment. However, it is not well known about the adhesion preference of cancer cells on the substrate and the mechanism of their interaction. In this study, we prepared the nano-, micro-patterned substrates using E-beam lithography techniques. MCF-7 cells were tested on the substrates to find out their adhesion preference. The substrates were made by polydimethylsiloxane (PDMS) with specific patterns including pillars with a diameter of 500 nm, 700 nm, $3{\mu}m$ and $5{\mu}m$. MCF-7 cells were seeded on the substrates and incubated for 24 hours. As a result, this study clearly demonstrated that the MCF-7 cells preferred 700 nm patterning.

• Current Photovoltaic Research
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• v.7 no.3
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• pp.55-60
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• 2019

Polymer:nonfullerene solar cells with an inverted-type device structure were fabricated by employing the bulk heterojunction (BHJ) active layers, which are composed of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)-benzo[1,2-b:4,5-b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5',7-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(6-methyl-2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). The BHJ layers were formed on a pre-patterned indium-tin oxide (ITO)-coated glass substrate by spin-coating using the blend solutions of PBDB-T and IT-M. The solar cell performances were investigated with respect to the cell position on the ITO-glass substrates. In addition, the short-term shelf lifetime of solar cells was tested by storing the PBDB-T:IT-M solar cells in a glovebox filled with inert gas. The results showed that the performance of solar cells was relatively higher for the cells close to the center of substrates, which was maintained even after storage for 24 h. In particular, the PCE of PBDB-T:IT-M solar cells was marginally decreased after storage for 24 h owing to the slightly reduced fill factor, even though the open circuit voltage was unchanged after 24 h.