• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.173-173
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• 2010

Recently, a patterned sapphire substrate (PSS) has been intensively used as one of the effective ways to reduce the dislocation density for the III-nitride epitaxial layers aiming for the application of high-performance, especially high-brightness, light-emitting diodes (LEDs). In this paper, we analyze the growth kinetics of the atoms and crystalline quality for the undopped-GaN depending on the facets of the pattern fabricated on a sapphire substrate. The effects of the PSS on the device characteristics of InGaN/GaN LEDs were also investigated. Several GaN samples were grown on the PSS under the different growth conditions. And the undoped-GaN layer was grown on a planar sapphire substrate as a reference. For the (002) plane of the undoped-GaN layer, as an example, the line-width broadening of the x-ray diffraction (XRD) spectrum on a planar sapphire substrate is 216.0 arcsec which is significantly narrower than that of 277.2 arcsec for the PSS. However, the line-width broadening for the (102) plane on the planar sapphire substrate (363.6 arcsec) is larger than that for the PSS (309.6 arcsec). Even though the growth parameters such as growth temperature, growth time, and pressure were systematically changed, this kind of trend in the line-width broadening of XRD spectrum was similar. The emission wavelength of the undoped-GaN layer on the PSS was red-shifted by 5.7 nm from that of the conventional LEDs (364.1 nm) under the same growth conditions. In addition, the intensity for the GaN layer on the PSS was three times larger than that of the planar case. The spatial variation in the emission wavelength of the undoped-GaN layer on the PSS was statistically ${\pm}0.5\;nm$ obtained from the photoluminescence mapping results throughout the whole wafer. These results will be discussed in terms of the mixed dislocation depending on the facets and the period of the patterns.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• 한국결정성장학회지
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• 제30권1호
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• pp.1-6
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• 2020

본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

• 한국재료학회지
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• 제27권12호
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• pp.699-704
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• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.2-314.2
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• 2014

To improve the optical and electrical properties of commercialized GaN-based light-emitting diodes (LEDs), many methods are suggested. In recent years, great efforts have been made to improve the internal quantum efficiency and light extraction efficiency (LEE) and promising approaches are suggested using a patterned sapphire substrate (PSS), V-pit embedded LED structures, and silica nanostructures. In this study, we report on the enhancement of photoluminescence (PL) intensity in GaN-based LED structures by using the combination of SiO2 (silica) nanospheres and polystyrene/SiO2 core-shell nanospheres. The SiO2 nanospheres-coated LED structure shows the slightly increased PL intensity. Moreover the polystyrene/SiO2 core-shell nanospheres-coated structure shows the more increase of PL intensity comparing to that of only SiO2 spheres-coated structure and the conventional structure without coating of nanospheres. The Finite-difference time-domain (FDTD) simulation results show corresponding result with experimentally observed results. The mechanism of enhancement of PL intensity using the coating of polystyrene/SiO2 core-shell nanospheres on LED surface can be explained by the improvement in extraction efficiency by both increasing the probability of light escape by reducing Fresnel reflection and by multiple scattering within the core-shell nanospheres.

• 한국결정성장학회지
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• 제29권3호
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• pp.83-90
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• 2019

본 논문에서는 전력 반도체 소자용 Mg-doped AlN 에피층을 혼합 소스 수소화물 기상 에피택시 방법에 의해 성장하였다. p형 재료로는 Mg을 사용하였다. 소자응용을 위한 기초 기판으로서 역할을 하기 위하여 GaN 에피층이 성장된 기판과 GaN 에피층이 성장되어 패턴이 형성된 사파이어 기판 위에 Mg-doped AlN 에피층을 선택 성장하였다. Mg-doped AlN 에피층의 표면과 결정 구조는 FE-SEM 및 HR-XRD에 의해 조사하였다. XPS 스펙트럼과 라만 스펙트럼 결과로부터 혼합소스 HVPE 방법에 의해 성장된 Mg-doped AlN 에피층은 전력소자 등에 응용이 가능할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.211-212
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• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.