• Applied Microscopy
• /
• 제47권3호
• /
• pp.176-186
• /
• 2017

Two-dimensional (2D) materials have been studied widely owing to their outstanding properties since monolayer graphene was isolated in 2004. Especially, among 2D materials, phosphorene, a single atomic layer of black phosphorus (BP), has been highlighted for its electrical properties. This material can serve as a substitute for graphene, which has been revealed as a "semi-metal", in next-generation semiconductors. However, few-layer BP is prone to degradation under ambient conditions owing to its reactivity with oxygen and water, which results in the condensation of water droplets on the surface of the BP flakes. This causes charge transfer from the phosphorus atom to oxygen, resulting in the formation of phosphoric acid (oxide) and degrades the various properties of BP. Therefore, it is necessary to find passivation methods to prevent BP flakes from being degraded under ambient conditions. This review article deals with recent studies on passivation methods for BP and their performance against oxygen and water, effects on the electrical properties of BP, and the extent to how they protect BP.

• Nuclear Engineering and Technology
• /
• 제54권12호
• /
• pp.4693-4697
• /
• 2022

Parylene coating was adopted on CdZnTe (CZT) detector as a mechanical protection layer after wet passivation with hydrogen peroxide (H₂O₂) and ammonium fluoride (NH₄F). Wet chemical passivant lose their effectiveness when exposed to the ambient conditions for a long time. Parylene coating could protect the effectiveness of passivation, by mechanically blocking the exposure to the ambient conditions. Stability of CZT detector was tested with the measurement of leakage current density and response to radio-isotopes. When the enough thickness of parylene (>100 ㎛) is adopted, parylene is a promising protection layer thereby ensuring the performance and long-term stability of CZT detectors.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 추계학술대회 초록집
• /
• pp.46.1-46.1
• /
• 2010

Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of $200-250^{\circ}C$. Best surface passivation has been obtained by post-deposition annealing of a-Si:H film layer. Post annealing around the deposition temperature was sufficient to improve the surface passivation for silicon substrates. We obtained effective carrier lifetimes above 5.5 ms on average.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.50-50
• /
• 2011

The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.332-333
• /
• 2009

In this paper, we have deposited silicon nitride films by plasma-enhanced chemical vapor deposition (PECVD). For films deposited under optimized conditions, the mechanism of plasma-enhanced vapor deposition of silicon nitride is studied by varying process parameters such as rf power, gas ratio, and chamber pressure. It was demonstrated that organic light-emitting diode(OLEDs) were fabricated with the inorganic passivation layer processing. We have been studied the inorganic film encapsulation effect for organic light-emitting diodes (OLED). To evaluate the passivation layer, we have carried out the fabrication of OLEDs and investigate with luminescence and MOCON.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.269-270
• /
• 2005

A hybrid passivation method using parylene and silicon dioxide combination layer for a flexible organic light emitting diode (FOLED) was applied on a polycarbonate substrate. A parylene coating by vapor polymerization method is a highly effective passivation process for the FOLED, and it applies all top surface and the edges of the FOLED device. In order to minimize the permeation of moisture and oxygen from the top surface of the device, an additional layer of silicon dioxide was deposited over the parylene coated layer. It was found that the water vapor transmittance rate (WVTR) of parylene (15 m-in-thickness) / SiO2 (0.3$\mu$m-in-thickness) combination layers deposited on polycarbonate film was decreased under the value of 10-3 g/m2day. The FOLED with the hybrid passivation showed remarkably longer lifetime characteristics in the ambient conditions than the non-passivated FOLED. The lifetime of the passivated FOLED was 400 hours and it was more than ten times over the lifetime of the convectional non-passivated FOLED.

• 한국전기전자재료학회논문지
• /
• 제17권4호
• /
• pp.432-438
• /
• 2004

In this study, we investigated the WVTRs Properties of inorganic thin composite films(ITCFs) to be newly adopted as the passivation layer of the OLED to replace the inorganic compound material Because we thought that inorganic compound materials were limited to enhance the barrier property of thin film. So, ITCFs were fabricated by mixing the cooperated material with the base material. And then, ITCFs were deposited onto the plastic substrate using the electron beam evaporation system and the water vapor transmission rates(WVTRs) were measured using the Mocon equipment. As a result of the WVTR measurement, we could analyze the WVTR values for various ITCFs. ITCFs had a remarkably lower value than the inorganic compound film. Through the analysis of thin film, we can understand the crystal structure and mixed amount. Therefore, ITCFs can be used as the inorganic passivation layers of OLED with the inorganic compound film.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.205-208
• /
• 1994

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li secondary battery. PEO-$LiClO_4$ electrolyte with plasticizer is very unstable. Passivation phenomena in polymer electrolyte cell was described by the SPL model. The time dependance of the impedance indicates that a passivation layer grows rapidly on the Li surface. However, the growing of passivation layer on the Li surface can be restrained by addition of zeolite to the PEO electrolyte. It suggested that addition of zeoliteto to the PEO-$LiClO_4$ electrolyte effectively controls the formation of a passivation layer on Li electrode.

• 한국수소및신에너지학회논문집
• /
• 제33권1호
• /
• pp.113-120
• /
• 2022

Quantum dots (QDs) are attractive photosensitizer candidates for application not only in solar cells but also in solar hydrogen generation. For the prepartion of highly efficient QD-sensitized photoelectrodes, it is important to reduce electron recombination at the photoanode/electrolyte interface. Here, we study on the coating condition of ZnS passivation layers on the photoanodes in QD-sensitized solar cells (QDSCs). The ZnS passivation layers are coated by successive ionic layer adsorption and reaction method, and as the cation precursor, zinc acetate and zinc nitrate are empolyed. Due to the higher pH of cation precursor solution, the ZnS loading is improved when the zinc acetate is used, compared to the zinc nitrate. This improved loading of ZnS leads to the reduced electron recombination at the surface of photoanodes and the enhaced conversion efficiency of QDSCs from 6.07% to 7.45%.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권6호
• /
• pp.581-588
• /
• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.