• Current Optics and Photonics
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• v.5 no.2
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• pp.129-133
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• 2021

This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 ㎛ at 30 K and 77 K, respectively. At a bias of -50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10-5 and 1.1 × 10-4 A/㎠ at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of -0.15 V was 1481 and 1056 Ω ㎠ at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.

• Journal of Advanced Marine Engineering and Technology
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• v.21 no.5
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• pp.535-541
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• 1997

The effect of concentration of each solution( HCI, $H_2SO_4$ and $HNO_3$), scan rate and polished surface condition on the corrosion of AISI 304 Stainless Steel were investigated, utilizing the Method ASTM G5 - 87. It can be concluded that: 1) For the same concentration(i.e. 1N) of each solution the corrosion rate is the highest in HCI and lowest in $HNO_3$. Also, the difference of values of $i_{cirt}$ generated for each solution is significant. 2) As the concentration of the solution $H_2SO_4$ is increased (O.5N, 1N, 2N) the values of $E_{cor}$ $i_{crit}$ and $i_{p}$ are increased. 3) In case of existence of SCN ion of O.OlN, the values of iCTIt and ip generated are approximately 100 times and 1.4 times higher respectively, than in the case of non - existence of $SCN^{-}$. However the existence of $SCN^{-}$ doesn't affect the value of $E_{cor}$ and $E_{p}$. 4) The values of $i_{crit}$ and $i_{p}$ are increased due to the increase of scan rate. But the values of $E_{cor}$ and $E_{p}$ do not depend on the scan rate. 5) The $i_{p}$ value depends greatly on oxygen in the solution, but the changes in values of $E_{cor}$ $i_{crit}$ and $E_{b}$ due to the oxygen are insignificant. 6) If a component is polished using #400, #600 and #800 wet polish paper, the effect of surface condition on variations of values of $i_{crit}$ and $i_{p}$ is slightly significant.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.6-11
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• 1999

Dialkylamine (di-)nitrobenzoates as vapor corrosion inhibitor were synthesized with dialkylamines and (di-)nitrobenzoic acids. The compounds were analyzed by elemental analyzer, FT-IR and $^1H$-NMR spectrophotometer. Corrosion inhibition of synthetic compounds and additives [$(NH_4)_2CO_3$, $NaHCO_3$] against ferrous and non-ferrous metal was investigated by potentiostatic method [1% (w/v) corrosion inhibitor in 1M $Na_2SO_4$ aqueous solution] respectively. For corrosion inhibition of ferrous metal, dialkylamine 4-nitrobenzoates were better inhibitor than dialkylamine 3, 5-dinitrobenzoates, the passivating current density ($i_p$) of dialkylamine 4-nitrobenzoate was shown $4.78mA/cm^2$. While, for non-ferrous metal, dialkylamine 3, 5-dinitrobenzoates were better, those of dipropylamine 3, 5-dinitrobenzoate and hexamethyleneimine 3, 5-dinitrobenzoate were shown 36 and $37mA/cm^2$. Additive effect of $(NH_4)_2CO_3$ and $NaHCO_3$ for corrosion inhibition of ferrous metal was excellent but that of non-ferrous metal was not. Optimum ratios of diethylamine 4-nitrobenzoate with $(NH_4)_2CO_3$ and $NaHCO_3$ were 4 : 6 and 5 : 5 (V/V), and passivating current densities ($i_p$) of the mixtures were shown 0.26 and $0.85mA/cm^2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.