• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.496-496
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• 2012

Sputtering은 박막의 품질(부착력, 밀도, 균일도등)이 우수하고 대면적 증착이 용이하여 반도체, 디스플레이, MEMS기술등과 같은 첨단산업에서 널리 이용되고 있는 증착방법이다. 일반적인 평판형 스퍼터건은 전계와 자계가 직교하는 Target의 일부영역에서만 스퍼터링 현상이 발생하게 되어 증착물질의 사용효율이 20~30% 정도로 좋지 못하고 스퍼터링 되지않는 부분에서는 재증착 현상에 의한 파티클 발생을 유발하여 Substrate에 손상을 입혀 박막의 질을 떨어뜨리게 된다. 본 연구에서는 이러한 문제점들의 물리적 현상의 진단 및 최적화를 위해 Particle-In-Cell (PIC)시뮬레이션을 이용하여 그 특성들을 알아보았다. 인가전압, 압력, 증착물질과 기판사이의 거리를 변화시켜 자기장이 포함된 Paschen curve를 그렸다. 전기장만이 포함된 시스템에서의 Paschen curve는 이미 공식으로 알려져 있으며 마그네트론 스퍼터링의 시스템에서 Paschen curve와 비교하여 보다 낮은 압력에서 플라즈마가 형성할 수 있는 것을 확인하였다. 또한 Target에 충돌하는 아르곤이온의 양, 에너지 분포, 각도의 분포 등을 관찰하였는데, 대부분의 아르곤이온은 압력이 증가할수록 에너지가 큰 경향성을 가지며 입사각도는 Target에 보다 수직으로 충돌하는 경향을 볼 수 있었다. 증착물질과 기판사이의 거리의 변화에 대해서는 이온 특성의 변화는 없었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.65-71
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• 2001

This paper describes partial discharge phenomenon with SF6gas pressures in insulation consisting of insulation paper and SF6 gas. We made the specimens with SF6 gas gaps which exist between aramid papers and electrodes and calculated the electric field intensity in the these gaps. We measured the partial discharge inception voltages and the AC breakdown voltages with the test method of IEC 60060-2 and did the partial discharge degradation experiments with a constant voltage. According to gas pressures, the breakdown voltages in SF6gas gaps were calculated by Paschen's law. And these results showed the ability applying partial discharge inception voltages evaluation to Paschen's law and the relationship between the PD quantities occurring insulation breakdown and PD occurring area.

• The Bulletin of The Korean Astronomical Society
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• v.39 no.2
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• pp.78.2-78.2
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• 2014

MIRIS (Multi-purpose Infrared Imaging System) is the primary payload on the Korean science and technology satellite, STSAT-3, which was launched on 2013 November 21. It is designed to observe the near-infrared sky with a $3.67^{\circ}{\times}3.67^{\circ}$ field of view and a $51.6^{{\prime}{\prime}}{\times}51.6^{{\prime}{\prime}}$ pixel resolution. Using two narrow-band filters at $1.88{\mu}m$ (Pa ${\alpha}$ line) and $1.84+1.92{\mu}m$ (Pa ${\alpha}$ dual continuum), the Paschen ${\alpha}$ Galactic plane survey has been carrying out, and the area for the Galactic longitude from $+280^{\circ}$ to $+100^{\circ}$ (with the width of $-3^{\circ}$ < b < $+3^{\circ}$) has been covered by 2014 August 31. In this contribution, we present the preliminary results of the MIRIS Paschen ${\alpha}$ emission maps and compare them with other wavelength maps such as $H{\alpha}$ and dust maps. Many of the Paschen ${\alpha}$ features have been detected along the plane, and some of them are weak or invisible in the $H{\alpha}$ map and coincide well with dense cloud regions.

• Proceedings of the Korean Society of Fisheries Technology Conference
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• 2002.05a
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• pp.38-42
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.902-907
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• 2003

In this paper, the ITO thin film, which is considered as one of the most currently used material for the high performance transparent conducting films for the PDP cell, was made in a parallel-plate, capacitively coupled DC magnetron sputtering system. Some electrical and optical properties of ITO films were investigated and discussed on the basis of glow discharge characteristics. The optimized thin film fabricating conditions of Ar gas pressure and substrate temperature were derived from the Paschen curve and glow discharge characteristics. The maximum transmittance of 89.61 % in the visible region and optical band gap of 3.89 eV and resistivity of 1.67${\times}$10$\^$-3/ $\Omega$-cm were obtained under the conditions of 300 C of substrate temperature and 10∼15 mtorr of pressure, which corresponds nearly to that of Paschen minimum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.396-400
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• 2005

Carbon nanotubes (CNTs) have been well known as electron emitters for field emission applications like FEDs. In this work, we propose as new application a vacuum sensor using CNTs and discuss its current-voltage characteristics as a function of vacuum pressure. The proposed sensor, based on electrical discharge theories in air gap well-known as Townsend theory and as Paschen's law, works by figuring out the variation of the dark current and the initial breakdown voltage depending on the vacuum pressure of air which can ionize through collisions with the electrons accelerated by high electric field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.405-410
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• 2006

We fabricated gas sensors using carbon nanotubes (CNTs) as electron emitters for the purpose of detecting inert gases. By using the silicon-glass anodic bonding and glass patterning technologies with the typical Si process, we improved the compactness of the sensors and the reliability in process. The proposed sensor, based on, an electrical discharge theory known as Paschen's law in principle, works by figuring the variation of the discharge current depending on gas concentration. In the experiment, the initial breakdown characteristics were measured for air and Ar as a function of gas pressure. As the result, even though it should be realized that there are many other factors which have an effect on the breakdown of a gap, the sensors led to similar result as predicted by Paschen's law, and they showed a possibility as gas sensors which enable to detect the gas density ranged to the vacuum pressure from 1 to $10^{-3}$ Torr.

• 전기의세계
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• v.23 no.4
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• pp.46-52
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• 1974

Generally, it has been regarded that there are two kinds of the effect of the electrodes, especially of the cathode in the gas discharge, (a) the effect caused by the difference of the cathode meterial and (b) the effect by the change of the cathode surface state even in the same meterials. Thus the two effects must be investigated independently to study the roles of the cathode in gas discharges. This paper measured sparking voltage in Rare gas (Ar, He) for the change of sparking voltage in repeating sparks and for the effect of (a) and (b) mentioned above, under the condition that the desorption of impurities from the cathod can be nigligible, and it is obtained that the correlative relations of the work function, sparking voltage and secondary coefficient are comparatively simple. In addition, the interesting character of the minimum point of the paschen's curves is found. The results were as follows; 1) The value of (pd)min with minimum pint of sparking voltage, (Vs)min, is 0.7-0.9 Torr. cm in Argon, but is 5.6-7.1 Torr. cm in Helium, and Paschen's curve in Helium shows slow curve than in Argon. 2) The minimum point of the Paschen's curve is satisfied actually Townsend's self sustaining criterion in Argon, but non-satisfaction in Helium, and the Townsend's secondary coefficient .gamma. action have compound property (.gamma.$_{i}$, .gamma.$_{p}$, .gamma.$_{m}$) in Helium. 3) The dependenting character of work function in Helium is less than in Argon. 4) The minimum point of sparking voltage increase under oxidized electrode than clear electrode in Au and Ag, but minimum point decrease in Ni and Cu.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.55.3-55.3
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• 2016

By comparing MIRIS Paschen-${\alpha}$ ($Pa{\alpha}$) Galactic Plane Survey (MIPAPS) data with Anderson's H II region catalog (the most complete Galactic H II region catalog up to date), we confirmed $Pa{\alpha}$ detections from ~50% of the H II region candidates in Cepheus (Galactic longitude from $+96^{\circ}$ to $116^{\circ}$). The detection of the hydrogen recombination line identifies these candidates as clear H II regions. If we extend this result to the whole plane, more than 1000 candidates are expected to be identified as H II regions. In this contribution, we present the results of quantitative estimations (brightness, size, etc.) for the $Pa{\alpha}$ blobs detected in Cepheus. To obtain intensity of $Pa{\alpha}$ emission line, we perform background and point spread function (PSF) matching between two filter images (line and continuum filters) as well as flux calibration.