• Title/Summary/Keyword: Parts for Semiconductor

검색결과 193건 처리시간 0.024초

An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

  • Ghosh, Pujarini;Haldar, Subhasis;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권4호
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    • pp.377-387
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    • 2012
  • An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

마이크로 드릴링을 이용한 미세압출다이 가공에 관한 연구 (A study on the machining of micro-extruding die using micro-drilling)

  • 민승기;제태진;이응숙;이동주
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2003년도 춘계학술대회 논문집
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    • pp.161-166
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    • 2003
  • The micro-extruding die is a die for manufacturing of fine-wire by extruding process. The fine-wire made from the micro-extruding can be effectively applied to fields of semiconductor parts and medical parts etc. It is predicted that the demand of fine-wire in industry is more and more increasing. In this study $\phi50\mu m$ micro-drill which is coated with diamond is used for drilling of super micro-hole sizes. For the machining of taper parts of entrance and exit, drill having $\phi50\mu\textrm{mm}$ inclination angle $20^{\circ}$and angle $30^{\circ}$ is used. This is useful for anti tool-breakage and excessive too-wear in drilling process. After micro-drilling, the polishing process by diamond abrasive and polishing wood s carried out for increasing surface roughness.

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MEMS for Heterogeneous Integration of Devices and Functionality

  • Fujita, Hiroyuki
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.133-139
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    • 2007
  • Future MEMS systems will be composed of larger varieties of devices with very different functionality such as electronics, mechanics, optics and bio-chemistry. Integration technology of heterogeneous devices must be developed. This article first deals with the current development trend of new fabrication technologies; those include self-assembling of parts over a large area, wafer-scale encapsulation by wafer-bonding, nano imprinting, and roll-to-roll printing. In the latter half of the article, the concept towards the heterogeneous integration of devices and functionality into micro/nano systems is described. The key idea is to combine the conventional top-down technologies and the novel bottom-up technologies for building nano systems. A simple example is the carbon nano tube interconnection that is grown in the via-hole of a VLSI chip. In the laboratory level, the position-specific self-assembly of nano parts on a DNA template was demonstrated through hybridization of probe DNA segments attached to the parts. Also, bio molecular motors were incorporated in a micro fluidic system and utilized as a nano actuator for transporting objects in the channel.

2차원 영상 정보를 이용한 3차원 위치 측정 알고리즘 개발 (Development of a 3-D Position Measurement Algorithm using 2-D Image Information)

  • 이준호;정성호;김동현
    • 한국기계가공학회지
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    • 제12권5호
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    • pp.141-148
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    • 2013
  • There are several problems in the conventional 2-D image processing and 3-D measurement systems. In the case of the 2-D image processing system, it is not possible to detect elevation data. In a 3-D measurement system, it requires a skillful operator and a lot of time for measuring data. Also, there exist data errors depending on operators. The limitation of detecting elevation data in the 2-D image processing system can be solved by laser diodes. In this study an algorithm that measures the accurate data in a subject face to be detected by combining laser diodes and a commercial CCD camera is developed. In the development process, a planar equation is developed using laser diodes and the equation is used to obtain a normal vector. Based on the results, an algorithm that transforms commercial CCD camera coordinates to 3-D coordinates is proposed. The completed measurement method will be applied to replace a manual measurement system for vehicle bodies and parts by an automated system.

열변형 저감을 위한 고분자 복합소재 배합 조건에 따른 재료특성 분석 (Analysis of Material Properties According to Compounding Conditions of Polymer Composites to Reduce Thermal Deformation)

  • 변상원;김영신;전의식
    • 반도체디스플레이기술학회지
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    • 제21권1호
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    • pp.148-154
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    • 2022
  • As the 4th industrial age approaches, the demand for semiconductors is increasing enough to be used in all electronic devices. At the same time, semiconductor technology is also developing day by day, leading to ultraprecision and low power consumption. Semiconductors that keep getting smaller generate heat because the energy density increases, and the generated heat changes the shape of the semiconductor package, so it is important to manage. The temperature change is not only self-heating of the semiconductor package, but also heat generated by external damage. If the package is deformed, it is necessary to manage it because functional problems and performance degradation such as damage occur. The package burn in test in the post-process of semiconductor production is a process that tests the durability and function of the package in a high-temperature environment, and heat dissipation performance can be evaluated. In this paper, we intend to review a new material formulation that can improve the performance of the adapter, which is one of the parts of the test socket used in the burn-in test. It was confirmed what characteristics the basic base showed when polyamide, a high-molecular material, and alumina, which had high thermal conductivity, were mixed for each magnification. In this study, functional evaluation was also carried out by injecting an adapter, a part of the test socket, at the same time as the specimen was manufactured. Verification of stiffness such as tensile strength and flexural strength by mixing ratio, performance evaluation such as thermal conductivity, and manufacturing of a dummy device also confirmed warpage. As a result, it was confirmed that the thermal stability was excellent. Through this study, it is thought that it can be used as basic data for the development of materials for burn-in sockets in the future.

겔 캐스팅 공정을 위한 알루미나 슬러리에서의 첨가제 함량 변화에 따른 겔화특성 평가 (Evaluation of Gelation Characteristics with The Variation of Additive Contents in The Alumina Slurry for Gel Casting Process)

  • 정준기;오창용;하태권
    • 소성∙가공
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    • 제31권5호
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    • pp.290-295
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    • 2022
  • Recently, the use of high-tech ceramic parts in functional electronic parts, automobile parts and semiconductor equipment parts is increasing. These ceramics materials are required to have high reproducibility, reliability, large size and complex shapes. The researchers initiated the work to develop a new shaping method called gel casting, which allows high performance ceramic materials with a complex shape to be produced. The manufacturing process parameters of gel casting include uniform mixing of the initiator, bubble removal, and slip injection. In this study, we analyzed the dispersion and gelation characteristics according to the change in the additive content of the alumina slurry in the gel casting process. The alumina slurry for gel casting was prepared by mixing a solvent, a monomer and a dispersant through a ball mill. Alumina powder and a gelation initiator were added to the mixed solution, and ball milling was performed for 24 hours. A viscosity of 6,435 cps and a stable zeta potential value were obtained under the conditions of alumina powder content of 55 vol% and dispersant 2.0 wt%. After curing for 12 hours by adding aps 0.1wt%, TEMED 0.2wt%, and Monomer 3, 5wt%, it was possible to separate from the molding cup, confirming that the gelation was completed.

정밀가공용 고속 자동선반 베드의 정하중 및 공진주파수 해석 (Analysis on Static Load and Resonance Frequency of Bed in High-speed Automatic Lathe for Precision Machining)

  • 하주환;이윤철;주강우;조은정;이영식;이재권;김광선
    • 반도체디스플레이기술학회지
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    • 제16권2호
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    • pp.32-38
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    • 2017
  • This paper is about the analysis on the vibration characteristic of tooling units on the precision bed in high-speed automatic lathe for precision machining. An automatic lathe operating at about 25,000 RPM is a critical factor in the self-weight stress and deformation of the bed. Especially, the resonance frequency should be grasped in advance to prevent abnormal vibration that may occur during processing. If the wrong bed is used, the resonant frequency can have a fatal influence on the precision machining and increase the defective rate of precision machined parts such as semiconductor parts. In this paper, vibration characteristics were evaluated through static load and resonance frequency analysis of automatic lathe bed. As a result, the maximum stress was 0.14MPa, the maximum deformation amount was $17.9{\mu}m$, and the natural frequency was 364.72Hz. The resonance frequency was calculated as 718Hz, and the stability was confirmed by being in the range of 400Hz or more, which is the processing condition.

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선삭 및 호빙 가공용 자동선반 베드의 정하중 및 공진주파수 해석 (Analysis on Static Load and Resonance Frequency of Bed in Turning and Hobbing Automatic Lathe for Precision Machining)

  • 하주환;이윤철;조은정;이영식;이재권;김광선
    • 반도체디스플레이기술학회지
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    • 제17권1호
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    • pp.66-70
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    • 2018
  • This paper is about the analysis on the vibration characteristic of tooling units on the precision bed in turning and hobbing automatic lathe for precision machining. An automatic lathe operating at about 12,000 RPM is a critical factor in the self-weight stress and deformation of the bed. Especially, the resonance frequency should be grasped in advance to prevent abnormal vibration that may occur during processing. If the wrong bed is used, the resonant frequency can have a fatal influence on the precision machining and increase the defective rate of precision machined parts such as semiconductor parts. In this paper, vibration characteristics were evaluated through static load and resonance frequency analysis of automatic lathe bed. As a result, the maximum stress was 14.52 MPa, the maximum deformation amount was $12.15{\mu}m$, and the natural frequency was 189.43 Hz. The resonance frequency was calculated as 500 Hz, and the stability was confirmed by being in the range of 200 Hz or more, which is the processing condition.

반도체 리드 프레임의 금형설계 자동화 시스템 개발에 관한 연구 (A Study on the Development of Computer Aided Die Design System for Lead Frame, Semiconductor)

  • 최재찬;김병민;김철;김재훈;김창봉
    • 한국정밀공학회지
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    • 제16권6호
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    • pp.123-132
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    • 1999
  • This paper describes a research work of developing computer-aided design of lead frame, semiconductor, with blanking operation which is very precise for progressive working. Approach to the system is based on the knowledge-based rules. Knowledge for the system is formulated from pasticity theories, experimental results and the empirical knowledge of field experts. This system has been written in AutoLISP on the AutoCAD using a personal computer and in I-DEAS Drafting Programming Language on the I-DEAS Master Series Drafting with Workstation, HP9000/715(64). Transference of data between AutoCAD and I-DEAS Master Series Drafting is accomplished by DXF(drawing exchange format) and IGES(initial graphics exchange specification) methods. This system is composed of five modules, which are input and shape treatment, production feasibility check, strip-layout, data-conversion and die-layout modules. The process planning and Die design system is designed by considering several factors, such as complexities of blank geometry, punch profiles, and the availability of a press equipment and standard parts. This system provides its efficiecy for strip-layout, and die design for lead frame, semiconductor.

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Integrated Thyristor Switch Structures for Capacitor Discharge Application

  • 김은동;장창리;김상철;백도현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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    • pp.22-25
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    • 2001
  • A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

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