• Progress in Medical Physics
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• v.15 no.4
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• pp.215-219
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• 2004

Due to their excellence for the high-energy therapy range of photon beams, researchers show increasing interest in applying MOSFET dosimeters to low- and medium-energy applications. In this energy range, however, MOSFET dosimeter is complicated by the fact that the interaction probability of photons shows significant dependence on the atomic number, Z, due to photoelectric effect. The objective of this study is to develop a very detailed 3-dimensional Monte Carlo simulation model of a MOSFET dosimeter for radiological characterizations and calibrations. The sensitive volume of the High-Sensitivity MOSFET dosimeter is very thin (1 ${\mu}{\textrm}{m}$) and the standard MCNP tallies do not accurately determine absorbed dose to the sensitive volume. Therefore, we need to score the energy deposition directly from electrons. The developed model was then used to study various radiological characteristics of the MOSFET dosimeter. the energy dependence was quantified for the energy range 15 keV to 6 MeV; finding maximum dependence of 6.6 at about 40 keV. A commercial computer code, Sabrina, was used to read the particle track information from an MCNP simulation and count the tracks of simulated electrons. The MOSFET dosimeter estimated the calibration factor by 1.16 when the dosimeter was at 15 cm depth in tissue phantom for 662 keV incident photons. Our results showed that the MOSFET dosimeter estimated by 1.11 for 1.25 MeV photons for the same condition.

• Ecology and Resilient Infrastructure
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• v.2 no.2
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• pp.167-176
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• 2015

The water quality of the Gulpo Stream flowing through Incheon, Bucheon, Seoul, and Kimpo is getting worse due to a slow flow rate and bank constructions by stream channelization as well as an inflow of pollutants from living-sewages and factory-sewages. Besides, a dry stream phenomenon caused by a lack of maintenance water upstream makes a self-purification system worse, and the water quality of the Gulpo Stream is currently at its lowest level. The accumulated sludge of the streambed is mostly formed by the deposition of particle pollutants due to the slow flow rate and an artificially straightened stream channel. This accumulated sludge adsorbs a great quantity of organic materials and heavy metals. Because of the internal contamination possibility by a re-gushing, even after the pollution source is removed, it can cause future water pollution. Without a total examination as previously recommended, it is considered difficult to accomplish practical efficiency. In conclusion, the management of periodic sediment management such as dredging would be necessary in the Gulpo Stream because sediment could be an internal pollution source of stream water under anaerobic conditions.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.833-840
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• 1996

Diamond thin films were deposited on p-type (100) Si wafers using MPECVD. Prior to deposition, ultrasonic striking was done to improve density of nucleation sites with dimond powder of 40~$60\mu$m size. Then diamond thin films were deposited at $^900{\circ}C$, 40Torr and 1000W microwave power using ${CH}_{4}$ and ${H}_{2}$ gases. The purity, the morphology and the microstructur'e and microdefects of diamond thin films were characterized by Raman spectroscopy, SEM and TEM, repectively. In Raman spectroscopy the peaks of non-diamond phase increased as ${CH}_{4}$, concentration increased. In SEM, the morphology of diamond thin films varied from crystalline to cauliflower as ${CH}_{4}$, concentration increased. As ${CH}_{4}$ con centration increased, the density of defects increased, with most defects being {III} twin. ${MTP}_{5}$, were formed with five (II]) planes. As these (Ill) Planes were twinned, ${MTP}_{5}$, represented five-fold symmetry. ]n the interfaces, defects in diamond thin films fanned out from small regions implying nucleation sites.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.1
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• pp.1-13
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• 2019

The accident at the Fukushima Dai-ichi Nuclear Power Plant (FDNPP) resulted in the deposition of large quantities of radionuclides over parts of eastern Japan. Radioactive contaminants have been observed over a large area including forests, cities, rivers and lakes. Due to the strong adsorption of radioactive cesium by soil particles, radioactive cesium migrates with the eroded soil, follows the surface flow paths, and is delivered downstream of population-rich regions and eventually to coastal areas. In this study, we developed a model to simulate the transport of contaminated sediment in a watershed hydrological system and this model was compared with observation data from eroded soil observation instruments located at the Korea Atomic Energy Research Institute. Two methods were applied to analyze the soil particle size distribution of the collected soil samples, including standardized sieve analysis and image analysis methods. Numerical models were developed to simulate the movement of soil along with actual rainfall considering initial saturation, rainfall infiltration, multilayer and rain splash. In the 2019 study, a numerical model will be used to add rainfall shield effect by trees, evaporation effect and shield effects of surface water. An eroded soil observation instrument has been installed near the Wolsong nuclear power plant since 2018 and observation data are being continuously collected. Based on these observations data, we will develop the numerical model to analyze long-term behavior of radionuclides on land as they move from land to rivers, lakes and coastal areas.

• Journal of the Korean Society of Radiology
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• v.16 no.3
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• pp.233-240
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• 2022

Research on the presence or absence of radiation shielding for FDM-type filaments has recently begun to be studied, but filaments with shielding capabilities are not sold in Korea, and not studies yet. Therefore, in this research, we will use HDPE (High Density Polyethylene) as a base material, select bismuth as a reinforcing material to manufacture a composite filament, evaluate the shielding ability, and provide basic data for the development of a radiation shielding composite material using 3D printing.A filament is produced by mixing Bismuth with an effective atomic number 83 with HDPE of PE series and adjusting the content of Bismuth to 20% wt, 30% wt, 40% wt. Compounded filaments were evaluated for their physical properties and shielding capabilities by ASTM evaluation methods. As the bismuth content increases, the density, weight, and tensile strength increase, and the shielding capacity is confirmed to be excellent. As a result of the radiation shielding capacity evaluation, it was confirmed that HDPE (80%) + Bi (20%) showed a shielding rate of 82% at 60 kV and a shielding rate of up to 94% or more at 40% bismuth content. In this study, we confirmed that it was possible to produce a radiation shield that is lighter than the metal particle-containing filaments. Furthermore, that have been shield radiation by using HDPE + Bi filaments, and radiation in the medical and radiation industries. The possibility of using it as a shielding complex was confirmed.

• The Journal of the Korea Contents Association
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• v.22 no.10
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• pp.733-741
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• 2022

Among the various evidence found in maritime crimes, fingerprints and DNA are very important in that they can identify a suspect. In this study, 5 types of non-porous surfaces (plastic, stainless, glass, ceramic, FRP), which are often found as evidence in the actual marine environment, were selected, and latent and blood fingerprints were passed down and immersed at the Donghae Maritime Police Station's exclusive pier for about 7 days. After that, DNA extraction, quantification, and STR profile were analyzed after fingerprint developing CA fumming method and 4 powder methods (Swedish black powder, Concentrated black powder, Supranano red powder, Dazzle orange powder). Among the fingerprint developing methods, when Supranano red powder was applied, a relatively high amount of DNA was found. As a result of STR profile analysis, an average of 16.8 to 9 loci were secured, and all 20 were confirmed in glass and ceramic materials. As a result of the study, it was possible to secure the STR profile by extracting and quantifying DNA after applying the fingerprint developing method to virtual evidence immersed for about 7 days, and further research is needed to secure the STR profile by analyzing DNA after applying various fingerprint developing methods such as VMD and SPR.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.276-281
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• 2021

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we synthesized yttrium oxyfluoride (YOF) powder by a solid-state reaction using Y₂O₃ and YF₃ as raw materials. Mixing ratio of the Y₂O₃ and YF₃ was varied from 1.0:1.0 to 1.0:1.6. Effects of the mixing ratio on crystal structure and microstructure of the synthesized YOF powder were investigated using XRD and FE-SEM. The synthesized YOF powder was successfully applied to plasma spray coating process on Al substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.153-157
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• 2023

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we mixed AlF₃ powder with the solid-state reacted yttrium oxyfluoride (YOF) in order to increase plasma-etching resistance of the plasma spray coated YOF layer. Effects of the mixing ratio of AlF₃ with YOF powder on crystal structure, microstructure and chemical composition were investigated using XRD and FE-SEM. The plasma-etching ratios of the plasma-spray coated layers were calculated and correlation with AlF₃ mixing ratio was analyzed.

• Journal of the Korean Geotechnical Society
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• v.23 no.4
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• pp.5-13
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• 2007

Many construction projects adopt grouting technology to prevent the leakage of groundwater or to improve the shear strength of the ground. Recognition as a feasible field procedure dates back to 1925. Since then, developments and field use have increased rapidly. According to improvement of grout materials, theoretical study on grout penetration characteristics is demanded. Fluid of grout always tends to flow from higher hydraulic potential to lower one and the motion of grout is also a function of formation permeability. Viscosity of pout is changed by chemical action while grout moves through pores. Due to the increment of viscosity, permeability is decreased. Permeability is also reduced by grout particle deposits to the soil aggregates. In this paper, characteristics of new cement grout material that has been developed recently are studied: injectable volume of new grout material is tested in two different grain sizes of sands; and the method to calculate injectable volume of grout Is suggested with consideration of change in viscosity and clogging phenomena. The calculated values are compared with injection test results. Viscosity of new grout material is found to increase as an exponential function of time. And lumped parameter $\delta$ of new grout material to be used for assessing deposition characteristics is estimated by comparing deposit theory with injection test results considering different soil types and different injection pressures. Injection test results show that grout penetration rate is decreased by the increase of grout viscosity and clogging phenomena.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.