• 제목/요약/키워드: Particle beam

검색결과 386건 처리시간 0.028초

Thin Oxide 불량에 미치는 Czochralski Si 웨이퍼의 미소결함의 영향 (The Effect of the Microdefects in Czoscralski Si wafer on Thin Oxide Failures)

  • 박진성;이우선;김갑식;문종하;이은구
    • 한국세라믹학회지
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    • 제34권7호
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    • pp.699-702
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    • 1997
  • The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

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EMMI(Emission Microscope)와 FIB(Focused Ion Beam)를 이용한 Thin Oxide 불량분석 (Failure Analysis of Thin Oxide by EMMI and FIB)

  • 박진성;이은구;이현규;이우선
    • 한국재료학회지
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    • 제6권6호
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    • pp.605-609
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    • 1996
  • MOS 소자의 얇은산화막(thin oxide)불량을 화학적으로 식각하지 않고 불량부위를 광전자방사(photon emission)반응을 이용하여 위치를 확인하고, 이곳을 FIB로 절단하여 불량부위의 단면을 관찰했다. 20nm 두께의 SiO2불량은 셀(cell)영역의 위치에 따른 의존성은 없고, 불량은 저전계의 입자(particle)성 불량과 중간전계의 Si 기판 핏(pit)과 관련된 불량이 주였다. 고전계에서는 전형적인 SiO2 산화막의 절연파괴가 일어난 것이 관찰된다.

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Effects of Neutral Particle Beam on Nano-Crystalline Silicon Thin Film Deposited by Using Neutral Beam Assisted Chemical Vapor Deposition at Room Temperature

  • Lee, Dong-Hyeok;Jang, Jin-Nyoung;So, Hyun-Wook;Yoo, Suk-Jae;Lee, Bon-Ju;Hong, Mun-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.254-255
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    • 2012
  • Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

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Numerical Calculation of the Deflected Path of Electrons through Water under External Magnetic Fields

  • Jeong, Dong-Hyeok;Kim, Jhin-Kee;Shin, Kyo-Chul;Kim, Ki-Hwan;Kim, Jeung-Kee;Oh, Young-Kee;Ji, Young-Hoo;Lee, Jeong-Ok;Kim, Seung-Kyu
    • 한국의학물리학회:학술대회논문집
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    • 한국의학물리학회 2003년도 제27회 추계학술대회
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    • pp.71-71
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    • 2003
  • The study on magnetic field combined radiation therapy, as a new technique to modify the dose distributions using external magnetic field, has been investigated. The goal of the study is to develop the techniques for dose localization, as a particle beam, from the strong magnetic fields. In this study, in order to study the principle of dose deposition in external fields, as a basic approach, we have calculated approximately the paths of traveling electrons in water under external magnetic fields with numerical methods. The calculations are performed for a primary particle by cumulating the steps which are defined as small path lengths which energy loss can be ignored. In this calculation, the energy loss and direction change for a step was calculated by using total stopping power and Lorentz force equation respectively. We have examined the deflected paths of the electron through water as a function of external magnetic field and incident electron s energy. Since we did not take account of the multiple scattering effects for electrons through water, there are errors in this calculation. However, from the results we can explain the principle of dose variation and dose focusing for electron beams under strong magnetic fields in water.

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Calibration of HEPD on KOMPSAT-1 Using the KCCH Cyclotron

  • Shin, Young-Hoon;Rhee, Jin-Geun;Min, Kyoung-Wook;Lee, Chun-Sik;Lee, Ju-Hahn;Kwon, Young-Kwan;Kim, Jong-Chan;Ha, Jang-Ho;Park, Se-Hwan;Lee, Chang-Hack;Park, H.S.;Kim, Yong-Kyun;Chai, Jong-Seo;Kim, Yu-Seog;Lee, Hye-Young
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 1999년도 Proceedings of International Symposium on Remote Sensing
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    • pp.208-213
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    • 1999
  • Space Physics Sensor (SPS) on-board the KOMPSAT-1 consists of the High Energy Particle Detector (HEPD) and the Ionospheric Measurement Sensor (IMS). The HEPD is to characterize the low altitude high energy particle environment and the effects on the microelectronics due to these high energy Particles. It is composed of four sensors: Proton and Electron Spectrometer(PES), Linear Energy Transfer Spectrometer (LET), Total Dose Monitor (TDM), and Single Event Monitor(SEM). 35MeV proton beam from the medical KCCH cyclotron, at Korea Cancer Center Hospital in Seoul, is used to calibrate the PES. Primary proton beam of 35MeV scattered by polypropylene target is converted to various energy Protons according to the elastic collision kinematics. In this calibration, the threshold level of the proton in the PES can be determined and the energy ranges of PES channels are also calibrated.

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PECVD 내에서 수소 펄스를 이용하여 생성되는 실리콘 입자의 변수에 따른 입경 분포 특성 실시간 분석에 관한 연구

  • 김동빈;최후미;안치성;김태성
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.113-113
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    • 2012
  • 플라즈마 내에서 발생하는 입자는 플라즈마 내 전기적 및 화학적 특성으로 인해 응집이 적고 균일한 특성을 가진다. 이에 따라 도포성이 좋으며 낮은 응력을 가지는 박막의 형성이 가능하다. 이러한 특성을 가지는 나노입자는 메모리, 고효율 박막형 태양전지 등에 이용될 수 있다. 특히, PECVD (Plasma enhanced chemical vapor deposition) 공정 중 플라즈마가 켜져있는 동안 수소 가스를 펄스형태로 추가 주입하는 방법은 실리콘 이온 사이의 결합을 통한 표면 성장을 일부 방해하여 이를 통해 최종적으로 생성되는 실리콘 입자의 크기제어를 가능하게 한다. 이러한 과정으로 PECVD내에서 생성된 입자의 입경 분포는 기존의 경우 공정 중 포집을 한 후 전자현미경을 이용하였지만 실시간 측정이 불가능한 한계가 있었고, 레이저를 이용한 실시간 측정은 그 측정범위의 한계로 인해 적용에 어려움이 있었다. 이에 따라 본 연구에서는 저압에서 실시간으로 나노입자 크기분포 측정이 가능한 PBMS (particle beam mass spectrometer)를 이용하여 PECVD 내에서 수소가스 펄스를 이용하여 발생되는 실리콘 입자를 공정 변수별로 측정하여 각 변수에 따른 입자 생성 경향을 분석하였다. 실리콘 나노 입자의 측정은 PBMS 장비의 전단 부분을 PECVD 장치 내부에 연결하여 진행하였다. 수소 가스 펄스를 이용한 실리콘 입자 생성의 주요 변수는 RF pulse, $H_2$ pulse, 가스 유량 (Ar, $SiH_4$, $H_2$), Plasma power, 공정 압력 등이 있다. 이와 같이 주어진 변수들의 제어를 통해 생성된 나노입자의 입경분포를 PBMS에서 실시간으로 측정하고, 동일한 조건에서 포집한 입자를 TEM 분석 결과와 비교하였다. 측정 결과 각각의 변수에 대하여 생성되는 입자의 크기분포 경향을 얻을 수 있었으며, 이는 추후 생성 입자의 응용 분야에 적합한 크기 분포 특성을 가지는 실리콘 입자를 제조하기 위한 조건을 정립하는데 중요한 역할을 할 것을 기대할 수 있다.

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Measurement of Neutron Production Double-differential Cross-sections on Carbon Bombarded with 430 MeV/Nucleon Carbon Ions

  • Itashiki, Yutaro;Imahayashi, Youichi;Shigyo, Nobuhiro;Uozumi, Yusuke;Satoh, Daiki;Kajimoto, Tsuyoshi;Sanami, Toshiya;Koba, Yusuke;Matsufuji, Naruhiro
    • Journal of Radiation Protection and Research
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    • 제41권4호
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    • pp.344-349
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    • 2016
  • Background: Carbon ion therapy has achieved satisfactory results. However, patients have a risk to get a secondary cancer. In order to estimate the risk, it is essential to understand particle transportation and nuclear reactions in the patient's body. The particle transport Monte Carlo simulation code is a useful tool to understand them. Since the code validation for heavy ion incident reactions is not enough, the experimental data of the elementary reaction processes are needed. Materials and Methods: We measured neutron production double-differential cross-sections (DDXs) on a carbon bombarded with 430 MeV/nucleon carbon beam at PH2 beam line of HIMAC facility in NIRS. Neutrons produced in the target were measured with NE213 liquid organic scintillators located at six angles of 15, 30, 45, 60, 75, and $90^{\circ}$. Results and Discussion: Neutron production double-differential cross-sections for carbon bombarded with 430 MeV/nucleon carbon ions were measured by the time-of-flight method with NE213 liquid organic scintillators at six angles of 15, 30, 45, 60, 75, and $90^{\circ}$. The cross sections were obtained from 1 MeV to several hundred MeV. The experimental data were compared with calculated results obtained by Monte Carlo simulation codes PHITS, Geant4, and FLUKA. Conclusion: PHITS was able to reproduce neutron production for elementary processes of carbon-carbon reaction precisely the best of three codes.

Investigation on physical and mechanical properties of manufactured sand concrete

  • Haoyu Liao;Zongping Chen;Ji Zhou;Yuhan Liang
    • Advances in concrete construction
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    • 제16권4호
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    • pp.177-188
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    • 2023
  • In the context of the shortage of river sand, two types of manufactured sand (MS) were used to partially replace river sand (RS) to design manufactured sand concrete (MSC). A total of 81 specimens were designed for uniaxial compression test and beam flexure test. Two parameters were considered in the tests, including the types of MS (i.e. limestone manufactured sand (LMS), pebble manufactured sand (PMS)) and the MS replacement percentage (i.e., 0%, 25%, 50%, 75%, 100%). The stress-strain curves of MSC were obtained. The effects of these parameters on the compressive strength, elastic modulus, peak strain, toughness and flexural strength were discussed. Additionally, the sensitivity of particle size distributions to the performance of MSC was evaluated based on the grey correlation analysis. The results showed that compared with river sand concrete (RSC), the rising slope of the stress-strain curves of limestone manufactured sand concrete (LMSC) and pebble manufactured sand concrete (PMSC) were higher, the descending phrase of LMSC were gentle but that of PMSC showed an opposite trend. The physical and mechanical properties of MSC were affected by the MS replacement percentage except the compressive strength of PMSC. When the replacement percentage of LMS and PMS were 50% and 25% respectively, the corresponding performances of LMSC and PMSC were better. In generally, when the replacement percentage of LMS and PMS were same, the comprehensive performance of LMSC were better than that of PMSC. The constitutive model and the equations for mechanical properties were proposed. The influence of particle ranging from 0.15 mm to 0 mm on the performance of MSC was lower than particle ranging from 4.75 mm to 0.15 mm but this influence should not be ignored.

고에너지 전자선 측정을 위한 광섬유 방사선 센서에서의 체렌코프 빛 측정 및 분석 (Measurements and characterizations of cerenkov light in fiber-optic radiation sensor irradiated by high energy electron beam)

  • 장경원;조동현;정순철;전재훈;이봉수;김신;조효성;박성용;신동호
    • 센서학회지
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    • 제15권3호
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    • pp.186-191
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    • 2006
  • In general, Cerenkov light is produced by a charged particle that passes through a medium with a velocity greater than that of visible light. Although the wavelength of Cerenkov light is very broad, the peak is in the almost visible range from 400 to 480 nm. Therefore, it always causes a problem to detect a real light signal that is generated in the scintillator on the fiber-optic sensor tip for dose measurements of high-energy electron beam. The objectives of this study are to measure, characterize and remove Cerenkov light generated in a fiber-optic radiation sensor tip to detect a real light signal from the scintillator. In this study, the intensity of Cerenkov light is measured and characterized as a function of incident angle of electron beam from a LINAC, and as a function of the energy of electron beam. As a measuring device, a photodiode-amplifier system is used, and a subtraction method using a background optical fiber is investigated to remove Cerenkov light.