• 제목/요약/키워드: Particle Deposition Velocity

검색결과 64건 처리시간 0.027초

웨이퍼 표면상의 입자침착에 관한 수치 시뮬레이션 (Numerical Simulation of Particle Deposition on a Wafer Surface)

  • 명현국;박은성
    • 대한기계학회논문집
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    • 제17권9호
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    • pp.2315-2328
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    • 1993
  • The turbulence effect of particle deposition on a horizontal free-standing wafer in a vertical flow has been studied numerically by using the low-Reynolds-number k-.epsilon. turbulence model. For both the upper and lower surfaces of the wafer, predictions are made of the averaged particle deposition velocity and its radial distribution. Thus, it is now possible to obtain local information about the particle deposition on a free-standing wafer. The present result indicates that the particle deposition velocity on the lower surface of wafer is comparable to that on the upper one in the diffusion controlled deposition region in which the particle sizes are smaller than $0.1{\mu}m$. And it is found in this region that, compared to the laminar flow case, the averaged deposition velocity under the turbulent flow is about two times higher, and also that the local deposition velocity at the center of wafer is high equivalent to that the wafer edge.

정전효과를 고려한 반도체 웨이퍼의 입자침착 특성 (Particle Deposition Characteristics with Electrostatic Effect on Semiconductor Wafers)

  • 이건형;채승기;문영준
    • 대한설비공학회:학술대회논문집
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    • 대한설비공학회 2006년도 하계학술발표대회 논문집
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    • pp.779-785
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    • 2006
  • Particle transport and deposition characteristics on semiconductor wafers inside the chamber were experimentally investigated via a particle generation & deposition system and a wafer surface scanner. Especially the relation between particle size($0.083{\sim}0.495{\mu}m$) and particle deposition velocity with ESA(Electrostatic Attraction) effect was studied. Spot deposition technique with the deposition system using nozzle type outlets of the chamber was newly conducted to derive particle deposition velocity and all experiment results were compared with the previous study and were in a good agreement as well.

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정전효과가 있는 100mm보다 큰 반도체 웨이퍼로의 입자침착 (Particle deposition on a semiconductor wafer larger than 100 mm with electrostatic effect)

  • 송근수;유경훈;이건형
    • 한국입자에어로졸학회지
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    • 제5권1호
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    • pp.17-27
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    • 2009
  • Particle deposition on a semiconductor wafer larger than 100 mm was studied experimentally and numerically. Particularly the electrostatic effect on particle deposition velocity was investigated. The experimental apparatus consisted of a particle generation system, a particle deposition chamber and a wafer surface scanner. Experimental data of particle deposition velocity were obtained for a semiconductor wafer of 200 mm diameter with the applied voltage of 5,000 V and PSL particles of the sizes between 83 and 495 nm. The experimental data of particle deposition velocity were compared with the present numerical results and the existing experimental data for a 100 mm wafer by Ye et al. (1991) and Opiolka et al. (1994). The present numerical method took into consideration the particle transport mechanisms of convection, Brownian diffusion, gravitational settling and electrostatic attraction in an Eulerian frame of reference. Based on the comparison of the present experimental and numerical results with the existing experimental results the present experimental method for a 200 mm semiconductor wafer was found to be able to present reasonable data.

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가열되는 회전원판으로의 입자 침착 해석 (Analysis on Particle Deposition on a Heated Rotating Disk)

  • 유경훈
    • 대한기계학회논문집B
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    • 제26권2호
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    • pp.245-252
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    • 2002
  • Numerical analysis was conducted to characterize particle deposition on a horizontal rotating disk with thermophorectic effect under laminar flow field. The particle transport mechanisms considered were convection, Brownian diffusion, gravitational settling and thermophoresis. The averaged particle deposition velocities and their radial distributions for the upper surface of the disk were calculated from the particle concentration equation in a Eulerian frame of reference for rotating speeds of 0∼1000rpm and temperature differences of 0∼5K. It was observed from the numerical results that the rotation effect of disk increased the averaged deposition velocities, and enhanced the uniformity of local deposition velocities on the upper surface compared with those of the disk at rest. It was also shown that the heating of the disk with ΔT=5K decreased deposition velocity over a fairly broad range of particle sizes. Finally, an approximate deposition velocity model for the rotating disk was suggested. The comparison of the present numerical results with the results of the approximate model and the available experimental results showed relatively good agreement between them.

수직 웨이퍼상의 입자 침착속도의 측정 (Measurement of Particle Deposition Velocity Toward a Vertical Wafer Surface)

  • 배귀남;이춘식;박승오;안강호
    • 설비공학논문집
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    • 제7권3호
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    • pp.521-527
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    • 1995
  • The average particle deposition velocity toward a vertical wafer surface in a vertical airflow chamber was measured by a wafer surface scanner(PMS Model SAS-3600). Polystyrene latex(PSL) spheres with diameters between 0.3 and $0.8{\mu}m$ were used. To examine the effect of the airflow velocity on the deposition velocity, experiments were conducted for three vertical airflow velocities ; 20, 30, 50cm/s. Experimental data of particle deposition velocity were compared with those given by prediction model suggested by Liu and Ahn(1987).

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수질에 대한 대기건식침적의 영향 - 건식침적량 추정 방법론의 비교를 중심으로 (Effect of Dry Deposition on Water Quality -The comparison of several methodologies for estimating dry deposition flux)

  • 정장표
    • 상하수도학회지
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    • 제22권1호
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    • pp.159-168
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    • 2008
  • A special field experiment has been carried out from March 2001 to June 2001 at the Changhowon in Kyunggi to investigate a better methodology for the estimation of dry deposition of pollutions applicable in Korea. In this study, dry deposition plate was used to measure of total and water soluble acidic mass fluxes, and CPRI(Coarse Particle Rotary Impactor), CI(Cascade Impactor) were also used to measure ambient concentrations in various particle size ranges. Sehmel-Hodgson model was used to estimate dry depostion velocity and Weibull probability distribution function was applied to get generalized particle size distribution for the size fractioned concentration data sampled by CPRI and CI. Atmospheric dry deposition fluxes of mass and ionic matters estimated by the various techniques(one-step, multi-step, equi-concentration, subdivision for only the coarse particle range, applying Weibull distribution function, etc.) were compared to flux data sampled by DDP. It was found out that the deposition fluxes estimation methodology calculated by the each particle size range devided by particle size distribution characteristics and the rapidly changed points of deposition velocity using Weibull probability distribution function was the most applicable.

VAD공정 관련 회전하는 원판으로의 입자 부착 (Particle deposition on a rotating disk in application to vapor deposition process (VAD))

  • 송창걸;황정호
    • 대한기계학회논문집B
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    • 제22권1호
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    • pp.61-69
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    • 1998
  • Vapor Axial Deposition (VAD), one of optical fiber preform fabrication processes, is performed by deposition of submicron-size silica particles that are synthesized by combustion of raw chemical materials. In this study, flow field is assumed to be a forced uniform flow perpendicularly impinging on a rotating disk. Similarity solutions obtained in our previous study are utilized to solve the particle transport equation. The particles are approximated to be in a polydisperse state that satisfies a lognormal size distribution. A moment model is used in order to predict distributions of particle number density and size simultaneously. Deposition of the particles on the disk is examined considering convection, Brownian diffusion, thermophoresis, and coagulation with variations of the forced flow velocity and the disk rotating velocity. The deposition rate and the efficiency directly increase as the flow velocity increases, resulting from that the increase of the forced flow velocity causes thinner thermal and diffusion boundary layer thicknesses and thus causes the increase of thermophoretic drift and Brownian diffusion of the particles toward the disk. However, the increase of the disk rotating speed does not result in the direct increase of the deposition rate and the deposition efficiency. Slower flow velocity causes extension of the time scale for coagulation and thus yields larger mean particle size and its geometric standard deviation at the deposition surface. In the case of coagulation starting farther from the deposition surface, coagulation effects increases, resulting in the increase of the particle size and the decrease of the deposition rate at the surface.

입자하전량에 따른 클린룸 수직벽체로의 입자침착 특성 (Characteristics of Particle Deposition onto Cleanroom Wall Panel for Varying Particle Charging Rates)

  • 김종준;노광철;성상철;백선호;오명도
    • 대한설비공학회:학술대회논문집
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    • 대한설비공학회 2008년도 하계학술발표대회 논문집
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    • pp.725-730
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    • 2008
  • In this study, we found out charged particle's deposition characteristic by experiments of $0.5{\mu}m$, $1.0{\mu}m$, $3.0{\mu}m$ size particle's concentration decay. We carried out the experiments on charged particle deposition onto the vertical cleanroom wall panel and some other fundamental experiments. The particle deposition mechanism is consist of sedimentation, convection, diffusion, thermophoresis, electrostatic and so on. Particle size determines mainly working deposition mechanism. The charged particle is made with corona discharge that are constituted field charging and diffusion charging. In addition, this combinational mechanism is called combined charging. The type of corona discharge determines quantity of particle electrical charge. In conclusion, we assumed that quantity of particle electrical charge accelerations deposition velocity onto the vertical cleanroom wall panel and proved it. And we figured out particle's deposition characteristic through compared between our experiment's results.

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Wafer Surface Scanner를 이용한 반도체 웨이퍼상의 입자 침착속도의 측정 (Measurement of Particle Deposition Velocity toward a Horizontal Semiconductor Wafer Using a Wafer Surface Scanner)

  • 배귀남;박승오;이춘식;명현국;신흥태
    • 설비공학논문집
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    • 제5권2호
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    • pp.130-140
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    • 1993
  • Average particle deposition velocity toward a horizontal semiconductor wafer in vertical airflow is measured by a wafer surface scanner(PMS SAS-3600). Use of wafer surface scanner requires very short exposure time normally ranging from 10 to 30 minutes, and hence makes repetition of experiment much easier. Polystyrene latex (PSL) spheres of diameter between 0.2 and $1.0{\mu}m$ are used. The present range of particle sizes is very important in controlling particle deposition on a wafer surface in industrial applications. For the present experiment, convection, diffusion, and sedimentation comprise important agents for deposition mechanisms. To investigate confidence interval of experimental data, mean and standard deviation of average deposition velocities are obtained from more than ten data set for each PSL sphere size. It is found that the distribution of mean of average deposition velocities from the measurement agrees well with the predictions of Liu and Ahn(1987) and Emi et al.(1989).

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전주지역에서 다환방향족 탄화수소의 건식 침적 측정 (Measurement of Dry Deposition of Polycyclic Aromatic Hydrocarbons in Jeoniu)

  • 김형섭;김종국;김영성
    • 한국대기환경학회지
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    • 제23권2호
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    • pp.242-249
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    • 2007
  • Deposition fluxes of polycyclic aromatic hydrocarbons (PAHs) were measured at the Chonbuk National University located in Jeonju between June and November 2002. Fluxes of gaseous and particulate PAHs were separately obtained using a water surface sampler (WSS) and a dry deposition plate (DDP). Most of PAHs were deposited in the gaseous form since the low molecular weight PAHs dominates in the atmosphere. The deposition velocity of particulate PAHs was higher than that of gaseous PAHs when the molecular weight was low, but substantially decreased as the fine particle fraction increased with molecular weight. The deposition velocity was generally higher at high wind speeds. However, increase in the deposition velocity in unstable atmospheric conditions was also observed for gaseous PAHs of intermediate molecular weight.