Particle Deposition Characteristics with Electrostatic Effect on Semiconductor Wafers

정전효과를 고려한 반도체 웨이퍼의 입자침착 특성

Particle transport and deposition characteristics on semiconductor wafers inside the chamber were experimentally investigated via a particle generation & deposition system and a wafer surface scanner. Especially the relation between particle size($0.083{\sim}0.495{\mu}m$) and particle deposition velocity with ESA(Electrostatic Attraction) effect was studied. Spot deposition technique with the deposition system using nozzle type outlets of the chamber was newly conducted to derive particle deposition velocity and all experiment results were compared with the previous study and were in a good agreement as well.