• Journal of Power Electronics
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• v.18 no.3
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• pp.892-901
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• 2018

SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.5
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• pp.511-520
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• 2011

Nowadays, industry of smart grid is important for practical use of the renewable energy. In this situation, it is important to use the energy storage to make more stable and efficient renewable energy sources. The power conditioning systems consist in a boost converter which makes renewable energy source connected with the grid-connected inverter and the charger/discharger which takes the energy transfer between the boost converter and an energy storage. The effects on the controller design of each converter must be investigated to avoid the instability of the entire system. small-signal modelling of the boost converter and charger/discharger have been done and a controller design example is also presented. In this paper, effects on the controller design of the boost converter and the charger/discharger are investigated according to the existence of the parasitic resistance of the boost converter. In conclusion, the parasitic resistance of the inductor should be considered from the aspect of both the frequency domain analysis and time domain simulation using both MATLAB and PSIM.

• Journal of Power Electronics
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• v.19 no.2
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• pp.591-601
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• 2019

With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.1
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• pp.70-77
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• 2005

A new converter to transfer energy from a low-voltage AC current source to a battery is proposed. It is focused to find operational modes of the converter. The low-voltage AC current source is an equivalent of the piezoelectric generator, which converts the mechanical energy to the electric energy. The converter consists of a full-bridge MOSFET rectifier and a MOSFET boost converter in order to make the converter small and efficient. The operational principle and modes of the converter are investigated with the consideration of effects of the parasitic capacitances of MOSFETs and diode. The results are proved with simulation studies using PSIM and Pspice.

• Journal of Power Electronics
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• v.16 no.1
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• pp.374-387
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• 2016

This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.

• KEPCO Journal on Electric Power and Energy
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• v.6 no.4
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• pp.473-480
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• 2020

In this paper, we proposed a high frequency equivalent circuit considering parasitic impedance components for differential noise analysis on the input stage during DC-DC buck converter switching operation. Based on the proposed equivalent circuit model, we presented a method to measure parasitic impedance parameters included in DC bus plate, IGBT, and PCB track using the gain phase method of a network analyzer. In order to verify the validity of this model, a DC-DC prototype consisting of a buck converter, a signal analyzer, and a LISN device, and then resonance frequency was measured in the frequency range between 150 kHz and 30 MHz. The validity of the parasitic impedance measurement method and the proposed equivalent model is verified by deriving that the measured resonance frequency and the resonance frequency of the proposed high frequency equivalent model are the same.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.4
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• pp.71-78
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• 2005

This paper proposes a novel multi-level energy recovery sustaining driver for AC PDP(Plasma Display Panel), which solves the problems of the conventional multi-level sustaining driver. While the conventional circuit improves the voltage md current stress of the switching elements in Weber circuit not only there are parasitic resonant currents between resonant inductors and parasitic capacitance and hard switching, but also the changing period between 0 and sustain voltage is too long. Comparing the proposed circuit with the conventional circuit, the number of components are reduced and the parasitic resonant currents in resonant inductors are eliminated Moreover the hard switching problem is solved by using CIM(Current Injection Method) and the operating frequency will be high as much as possible by removing Vs/2 sustain period. And the circuit operations of the proposed circuit are analyzed for each mode and the validity is verified by the simulations using PSpice program.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.3
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• pp.274-281
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• 2005

A new resonant pulse converter for energy harvesting is proposed. The converter transfers energy from a low-voltage AC current to a battery. The low-voltage AC current source is an equivalent of the piezoelectric generator, which converts the mechanical energy to the electric energy. The converter consists of a full-bridge rectifier having four N-type MOSFETs and a boost converter haying N-type MOSFET and P-type MOSFET instead of diode. Switching of MOSFETs utilizes the capability of the $3^{rd}$ regional operation. The operational principles and switching method for the power control of the converter are investigated with the consideration of effects of the parasitic capacitances of MOSFETs. Simulation and experiment are performed to prove the analysis of the converter operation and to show the possibility of the $\mu$W energy harvesting.

• Tribology and Lubricants
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• v.26 no.5
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• pp.277-282
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• 2010

The purpose of this paper is to study and analysis the failure examples for parasitic current leakage produced in starting system on gasoline engine. It verified the discharge of battery by electric leakage because of internal wiring damage problem for CD auto changer installed in car. Also, it verified the no-stating phenomenon because of deposit forming by chemical reaction of battery fluid between battery post and cable fixing parts. It verified the damage for brush holder and commutator mixing by internal short phenomenon because of brush carbon a particle and engine oil that was flowed into internal of starting motor. It verified the working phenomenon of audio by a point of contact even if the driver turn to "LOCK" position the key.

• Journal of Power Electronics
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• v.5 no.4
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• pp.247-256
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• 2005

In order to harvest power in an efficient manner from a micro piezoelectric (PZT) device for charging the battery of a remote system, a new AC/DC resonant pulse power converter is proposed. The proposed power converter has two stages in the power conversion process. The first stage includes N-type MOSFET full bridge rectifier. The second stage includes a boost converter having an N-type MOSFET and a P-type MOSFET. MOSFETs work in the $1^{st}$ or $3^{rd}$ quadrant region. A small inductor for the boost converter is assigned in order to make the size of the power converter as small as possible, which makes the on-interval of the MOSFET switch of the boost converter ultimately short. Due to this short on-interval, the parasitic junction capacitances of MOSFETs affect the performance of the power converter system. In this paper, the performance of the new converter is analytically and experimentally evaluated with consideration of the parasitic capacitance of switching devices.