• Title/Summary/Keyword: Parasitic components

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Design and Implementation of Linear Gain Equalizer for Microwave band (초고주파용 선형 이득 등화기 설계 및 제작)

  • Kim, Kyoo-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.11
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    • pp.635-639
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    • 2016
  • In the devices used in the microwave frequency band, the gain decreases as the frequency increases due to the parasitic component. To compensate for these characteristics, a linear gain equalizer with an opposite slope is needed in wideband systems, such as those used for electronic warfare. In this study, a linear gain equalizer that can be used in the 18 ~ 40GHz band is designed and fabricated. Circuit design and momentum design (optimizations) were carried out to reduce the errors between design and manufacturing. A thin film process is used to minimize the parasitic components within the implementation frequency band. A sheet resistance of 100 ohm/square was employed to minimize the wavelength variation due to the length of the thin film resistor. This linear gain equalizer is a structure that combines a quarter wavelength-resonator on a series microstrip line with a resistor. All three 1/4 wavelength short resonators were used. The fabricated linear gain equalizer has a loss of more than -5dB at 40GHz and a 6dB slope in the 18 ~ 40GHz band. By using the manufactured gain equalizer in a multi-stage connected device such as an electronic warfare receiver, the gain flatness degradation with increasing frequency can be reduced.

Plasmonic Enhanced Light Absorption by Silver Nanoparticles Formed on Both Front and Rear Surface of Polycrystalline Silicon Thin Film Solar Cells

  • Park, Jongsung;Park, Nochang;Varlamov, Sergey
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.493-493
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    • 2014
  • The manufacturing cost of thin-film photovoltics can potentially be lowered by minimizing the amount of a semiconductor material used to fabricate devices. Thin-film solar cells are typically only a few micrometers thick, whereas crystalline silicon (c-Si) wafer solar cells are $180{\sim}300\mu}m$ thick. As such, thin-film layers do not fully absorb incident light and their energy conversion efficiency is lower compared with that of c-Si wafer solar cells. Therefore, effective light trapping is required to realize commercially viable thin-film cells, particularly for indirect-band-gap semiconductors such as c-Si. An emerging method for light trapping in thin film solar cells is the use of metallic nanostructures that support surface plasmons. Plasmon-enhanced light absorption is shown to increase the cell photocurrent in many types of solar cells, specifically, in c-Si thin-film solar cells and in poly-Si thin film solar cell. By proper engineering of these structures, light can be concentrated and coupled into a thin semiconductor layer to increase light absorption. In many cases, silver (Ag) nanoparticles (NP) are formed either on the front surface or on the rear surface on the cells. In case of poly-Si thin film solar cells, Ag NPs are formed on the rear surface of the cells due to longer wavelengths are not perfectly absorbed in the active layer on the first path. In our cells, shorter wavelengths typically 300~500 nm are also not effectively absorbed. For this reason, a new concept of plasmonic nanostructure which is NPs formed both the front - and the rear - surface is worth testing. In this simulation Al NPs were located onto glass because Al has much lower parasitic absorption than other metal NPs. In case of Ag NP, it features parasitic absorption in the optical frequency range. On the other hand, Al NP, which is non-resonant metal NP, is characterized with a higher density of conduction electrons, resulting in highly negative dielectric permittivity. It makes them more suitable for the forward scattering configuration. In addition to this, Ag NP is located on the rear surface of the cell. Ag NPs showed good performance enhancement when they are located on the rear surface of our cells. In this simulation, Al NPs are located on glass and Ag NP is located on the rear Si surface. The structure for the simulation is shown in figure 1. Figure 2 shows FDTD-simulated absorption graphs of the proposed and reference structures. In the simulation, the front of the cell has Al NPs with 70 nm radius and 12.5% coverage; and the rear of the cell has Ag NPs with 157 nm in radius and 41.5% coverage. Such a structure shows better light absorption in 300~550 nm than that of the reference cell without any NPs and the structure with Ag NP on rear only. Therefore, it can be expected that enhanced light absorption of the structure with Al NP on front at 300~550 nm can contribute to the photocurrent enhancement.

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Cross-reacting and specific antigenic components in cystic fluid from metacestodes of Echinococcus grannlosus and Taenia solium (포충 및 유구낭미충 낭액에 있어서 공통항원 및 특리이원 분획)

  • Yoon Kong;Shin-Yong Kang;Seung-Yull Cho;Duk-Young Min
    • Parasites, Hosts and Diseases
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    • v.27 no.2
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    • pp.131-140
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    • 1989
  • Sera from confirmed patients of 5 hydatidosis, 67 neurocysticercosis and 89 other parasitic diseases were tested for specific antibody (IgG) levels by ELISA to cystic quid antigens from metacestodes of Echinococcus granuzosus (HF) and Taenia sodium (CF). All hydatidosis sera reacted positively to both HF and CF while neuro- cysticercosis sera did in 49.3% to HF and 85.1% to CF, The frequencies of cross- reactions were lower in other parasitic diseases to both antigens, By SDS-PAGE, protein bands of 64, 35, 22 and 7 kilodaltons (kDa) were found common in HF and CF. SDS-PAGE/immunoblot exhibited that hl·datidosis sera reacted crossly to CF at 135, 110, 100, 86, 64, 45, 39, 35 and 24 kDa bands while neurocysticercosis sera did to HF at 135, 100, 86, 64, 52, 39, 35, 29 and 24 kDa bands. These results indicated that protein bands of 135, 100, 86, 64, 39, 35 and 24 kDa were major common components in HF and CF. Protein bands of 7 kDa in HF and 15, 10 and 7 kDa in CF did not react crossly and were specific components in respective antigens.

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Pulsed-Bias Pulsed-RF Passive Load-Pull Measurement of an X-Band GaN HEMT Bare-chip (X-대역 GaN HEMT Bare-Chip 펄스-전압 펄스-RF 수동 로드-풀 측정)

  • Shin, Suk-Woo;Kim, Hyoung-Jong;Choi, Gil-Wong;Choi, Jin-Joo;Lim, Byeong-Ok;Lee, Bok-Hyung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.10 no.1
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    • pp.42-48
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    • 2011
  • In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

High-Frequency Circuit Modeling of the Conducted-Emission from the LDC System of a Electric Vehicle (전기자동차 LDC 시스템의 전도 방출에 관한 고주파 모델링 연구)

  • Jung, Kibum;Jo, Byeong-Chan;Chung, Yeon-Choon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.8
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    • pp.798-804
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    • 2013
  • In this paper, conducted emission from the LDC(Low-Side DC/DC Converter) of a HEV/EV was analyzed using high-frequency circuit modeling in system-level approach. The conducted emission by PWM process(100 kHz; Switching Frequency) can cause RFI(Radio-Frequency Interference) problems in the AM/FM frequency range. In order to mitigate this conducted emission, a high-frequency equivalent circuit model is proposed by analyzing the fundamental circuits, parasitic components in their parts and connections and non-linear characteristics of MOSFETs, high-power capacitors, inverters, motors, high-power cables, and bus bars which are composed of the LDC. Using these circuit models, results of both simulation and measurement were compared and similarities between them were verified. We are looking forward that this approach can be effectively used in the EMC design of HEV/EV.

Modulation of dendritic cell function by Trichomonas vaginalis-derived secretory products

  • Song, Min-Ji;Lee, Jong-Joo;Nam, Young Hee;Kim, Tae-Gyun;Chung, Youn Wook;Kim, Mikyoung;Choi, Ye-Eun;Shin, Myeong Heon;Kim, Hyoung-Pyo
    • BMB Reports
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    • v.48 no.2
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    • pp.103-108
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    • 2015
  • Trichomoniasis caused by the parasitic protozoan Trichomonas vaginalis is the most common sexually transmitted disease in the world. Dendritic cells are antigen presenting cells that initiate immune responses by directing the activation and differentiation of naive T cells. In this study, we analyzed the effect of Trichomonas vaginalis-derived Secretory Products on the differentiation and function of dendritic cells. Differentiation of bone marrow-derived dendritic cells in the presence of T. vaginalis-derived Secretory Products resulted in inhibition of lipopolysaccharide-induced maturation of dendritic cells, down-regulation of IL-12, and up-regulation of IL-10. The protein components of T. vaginalis-derived Secretory Products were shown to be responsible for altered function of bone marrow-derived dendritic cells. Chromatin immunoprecipitation assay demonstrated that IL-12 expression was regulated at the chromatin level in T. vaginalis-derived Secretory Products-treated dendritic cells. Our results demonstrated that T. vaginalis- derived Secretory Products modulate the maturation and cytokine production of dendritic cells leading to immune tolerance.

Package-type polarization switching antenna using silicon RF MEMS SPDT switches (실리콘 RF MEMS SPDT 스위치를 이용한 패키지 형태의 편파 스위칭 안테나)

  • Hyeon, Ik-Jae;Chung, Jin-Woo;Lim, Sung-Joon;Kim, Jong-Man;Baek, Chang-Wook
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1511_1512
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    • 2009
  • This paper presents a polarization switching antenna integrated with silicon RF MEMS SPDT switches in the form of a package. A low-loss quartz substrate made of SoQ (silicon-on-quartz) bonding is used as a dielectric material of the patch antenna, as well as a packaging lid substrate of RF MEMS switches. The packaging/antenna substrate is bonded with the bottom substrate including feeding lines and RF MEMS switches by BCB adhesive bonding, and RF energy is transmitted from signal lines to antenna by slot coupling. Through this approach, fabrication complexity and degradation of RF performances of the antenna due to the parasitic effects, which are all caused from the packaging methods, can be reduced. This structure is expected to be used as a platform for reconfigurable antennas with RF MEMS tunable components. A linear polarization switching antenna operating at 19 GHz is manufactured based on the proposed method, and the fabrication process is carefully described. The s-parameters of the fabricated antenna at each state are measured to evaluate the antenna performance.

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Performance Improvement of Isolated High Voltage Full Bridge Converter Using Voltage Doubler

  • Lee, Hee-Jun;Shin, Soo-Cheol;Hong, Seok-Jin;Hyun, Seung-Wook;Lee, Jung-Hyo;Won, Chung-Yuen
    • Journal of Electrical Engineering and Technology
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    • v.9 no.6
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    • pp.2224-2236
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    • 2014
  • The performance of an isolated high voltage full bridge converter is improved using a voltage doubler. In a conventional high voltage full bridge converter, the diode of the transformer secondary voltage undergoes a voltage spike due to the leakage inductance of the transformer and the resonance occurring with the parasitic capacitance of the diode. In addition, in the phase shift control, conduction loss largely increases from the freewheeling mode because of the circulating current. The efficiency of the converter is thus reduced. However, in the proposed converter, the high voltage dual converter consists of a voltage doubler because the circulating current of the converter is reduced to increase efficiency. On the other hand, in the proposed converter, an input current is distributed when using parallel input / serial output and the output voltage can be doubled. However, the voltages in the 2 serial DC links might be unbalanced due to line impedance, passive and active components impedance, and sensor error. Considering these problems, DC injection is performed due to the complementary operations of half bridge inverters as well as the disadvantage of the unbalance in the DC link. Therefore, the serial output of the converter needs to control the balance of the algorithm. In this paper, the performance of the conventional converter is improved and a balance control algorithm is proposed for the proposed converter. Also, the system of the 1.5[kW] PCS is verified through an experiment examining the operation and stability.

EFFECT OF SUPPLEMENTATION AND PARASITIC INFECTION ON PRODUCTIVITY OF THAI NATIVE AND CROSS-BRED FEMALE WEANER GOATS II. BODY COMPOSITION AND SENSORY CHARACTERISTICS

  • Pralomkarn, W.;Intarapichet, K.;Kochapakdee, S.;Choldumrongkul, S.
    • Asian-Australasian Journal of Animal Sciences
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    • v.7 no.4
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    • pp.555-561
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    • 1994
  • This paper presents results from a study of the body composition and sensory characteristics of female weaner goat meat. A completely randomized $3{\times}3{\times}2$ factorial design was used. Factors were genotype (Thai native; TN, 75% TN $\times$ 25% Anglo-Nubian; AN and 50% TN $\times$ 50% AN), feeding {grazing only, low (1.0% BW/d) and high (1.5% BW/d) concentrate supplementation and parasite control (undrenched and drenched)}. It was shown that there was no effect of genotype on body components and dressing percentage. However, TN and 75% TN $\times$ 25% AN kids had significantly (p<0.05) higher muscle to bone ratios (4.20% and 4.20%, respectively) compared with 50% TN $\times$ 50% AN kids (3.88%). Kids on grazing only had significantly (p<0.01) higher muscle percentage (64.12%) than did kids in low (61.30%) and high (60.62%) supplementary feeding program, but there was no significant (p>0.05) difference between low and high supplementary feeding groups. Kids offered supplementary feeding had significantly (p<0.01) higher percentages of total fat, intermuscular fat, pelvic fat and kidney fat than those of grazing only. Kids offered supplementary feeding had significantly (p<0.05) higher muscle to bone ratios and significantly (p<0.01) higher muscle plus fat to bone ratios compared with those of grazing only. This may be due to significantly lower (p<0.01) bone contents (14.95, 14.17 and 16.8% for kids offered low and high supplementary feeding and grazing only, respectively. There was no significant difference in sensory characteristics of goat meat between genotypes or feeding groups.

Identification of Normally Operating High-Voltage Cables beyond Expected Life time (예상 수명을 초과하여 정상적으로 동작하는 고압 케이블의 확인)

  • Um, Kee-Hong;Lee, Kwan-Woo
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.15 no.5
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    • pp.207-212
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    • 2015
  • Continuous, high-quality supply of electrical energy is the backbone of any modern economy. Any equipment operating at a power station must be reliable and safe. All major power supply components such as transformers, cables, generators, and switchgear need to be kept in perfect operating condition. The lifetime of power cables, used as the main means of transferring electric power, is understood to be about 30 years, from the time of manufacturing. The dielectrics between two conductors of a cable must be able to withstand electrical stresses from high-voltage input. This condition should be verified throughout the lifetime of the cable system. Several techniques, such as VLF-tan${\delta}$, partial discharge, and insulation resistance are used in order to determine the operating conditions of cables. In this paper, we present our work on insulation resistance to diagnose cables in operation at the Western Power station in Taean, Chungcheong Namdo Province, South Korea. As a result we have found cables the life time of which is 38 years.