• 대한기계학회논문집A
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• 제34권6호
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• pp.751-756
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• 2010

비선형 초음파는 선형 초음파와 비교하였을 때 재료의 물성 변화에 민감하게 반응한다. 이 연구의 목표는 비선형 요소를 포함하여 열처리 조건과 초음파 비선형성의 상관관계를 알아내는 것이다. 본 연구에서 기존의 방법과는 다른 수정된 초음파속도계산 식이 새롭게 제안되었다. 이것은 열처리된 재질에서 초음파 속도변화가 재료의 비선형성 때문에 발생하는 것을 찾아내었다. 실험을 통하여 수정된 초음파 속도와 1차 조화 및 2차 조화파의 진폭 비율이 서로 동일한 경향을 보이는 것을 알아냈다. 그리고 수정된 초음파속도식을 통해 계산된 상대적인 비선형계수는 기존의 방법을 이용하였을 때보다 더 민감함을 알아냈다.

• The Journal of Korean Physical Therapy
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• 제26권3호
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• pp.136-139
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• 2014

Purpose: The purpose of this study will demonstrate that relationship between scoliosis and gait factor and foot weight bearing in ambulation. Methods: Subjects were 40 elementary students. A normal control group consisted of a total of 20 children without any known musculoskeletal disorders and an AIS group of 20 children with mild AIS (defined by a Cobb angle between 10 and $25^{\circ}$) were recruited. Measurements were scoliometer screening test, Cobb angle, gait parameter (rate of swing/stance phase, gait velosity), foot weight bearing (entire, fore, hind). Results: Scoliometer screening test (P = 0.000) and X-ray Cobb angle (P = 0.000) significant difference of group which was significantly higher in the AIS group. Gait parameter not showed significant difference. Forefoot weight bearing was significantly higher in the AIS group than more normal group. Conclusion: It seems that the results of weight bearing analysis in ambulation may be used in modifying rehabilitation programs for individual needs of patients with idiopathic scoliosis.

• 대한수학회지
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• 제54권3호
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• pp.835-845
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• 2017

The $GCF_{\epsilon}$ expansion is a new class of continued fractions induced by the transformation $T_{\epsilon}:(0, 1]{\rightarrow}(0, 1]$: $T_{\epsilon}(x)={\frac{-1+(k+1)x}{1+k-k{\epsilon}x}}$ for $x{\in}(1/(k+1),1/k]$. Under the algorithm $T_{\epsilon}$, every $x{\in}(0,1]$ corresponds to an increasing digits sequences $\{k_n,n{\geq}1\}$. Their basic properties, including the ergodic properties, law of large number and central limit theorem have been discussed in [4], [5] and [7]. In this paper, we study the large deviation for the $GCF_{\epsilon}$ expansion and show that: $\{{\frac{1}{n}}{\log}k_n,n{\geq}1\}$ satisfies the different large deviation principles when the parameter ${\epsilon}$ changes in [-1, 1], which generalizes a result of L. J. Zhu [9] who considered a case when ${\epsilon}(k){\equiv}0$ (i.e., Engel series).

• 응용통계연구
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• 제33권4호
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• pp.467-482
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• 2020

본 논문은 이분산성을 갖는 위치-척도 시계열 모형에서 모수의 변화에 대한 모니터링 절차를 연구한다. 모니터링 절차에서 수정된 잔차의 누적합을 이용한 탐지기를 소개하고 귀무가설과 대립가설 하에서 각각 모니터링 절차에 대한 점근적 성질을 규명한다. 그리고 모의실험과 사례 분석을 통하여 제안한 모니터링 방법의 성능이 우수함을 확인한다.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• 전력전자학회논문지
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• 제7권6호
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• pp.517-523
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• 2002

영구자석 동기전동기의 전동기상수 변동을 보상한 센서리스 제어를 제안한다. 실제시스템의 d축 및 q축 전류와 위치 예측기의 전동기 모델의 d축 및 q축 전류의 차이를 이용하여 회전자의 위치를 예측한다. 전동기가 회전방향을 바꿀 때 발생하는 낮은 속도에서 고정자 저항을 검출하고 온도변화에 의한 고정자 저항 및 유기전압 상수의 변동을 보상한다. 또한 회전자 위치 예측기의 이득은 전동기 속도에 따라 보상된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.236-239
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• 1995

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• ETRI Journal
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• 제35권6호
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• pp.990-1000
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• 2013

This paper describes the scalable extension of High Efficiency Video Coding (HEVC) to provide flexible high-quality digital video content services. The proposed scalable codec is designed on multi-loop decoding architecture to support inter-layer sample prediction and inter-layer motion parameter prediction. Inter-layer sample prediction is enabled by inserting the reconstructed picture of the reference layer (RL) into the decoded picture buffer of the enhancement layer (EL). To reduce the motion parameter redundancies between layers, the motion parameter of the RL is used as one of the candidates in merge mode and motion vector prediction in the EL. The proposed scalable extension can support scalabilities with minimum changes to the HEVC and provide average Bj${\o}$ntegaard delta bitrate gains of about 24% for spatial scalability and of about 21% for SNR scalability compared to simulcast coding with HEVC.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.453-457
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• 2006

This study predicts the modified structure of eigenvectors and eigenvalues due to the changes in the mass and the stiffness of the structure. The sensitivity method of natural frequency using partial differential are derived with respect to the physical parameter to calculate the structure modification. The method are applied to the 3 degree of freedom???slumped mass model by modeling the mass and stiffness, and then applies the method to a real crankshaft system. The position, direction of parameter change and modified value were predicted for modification. Finally the predicted value is used to investigate the magnitude of vibration and we found that the effect of modification results to reduce the level of magnitude vibration is satisfactory.