• Title/Summary/Keyword: Parallel Transmission

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Design of Three-stacked Microstrip Patch Array Antenna Having Tx/Rx Feeds For Satellite Communication (위성통신을 위한 송수신 겸용 삼중 적층 마이크로스트립 패치 배열 안테나 설계)

  • Park, Ung-Hee;Noh, Haeng-Sook
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.5
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    • pp.853-859
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    • 2007
  • This paper presents a microstrip patch array antenna having transmission feed and reception feed for satellite communication in the Ku band. In this paper, the element of the patch array antenna is a three-stacked structure consisting of one radiation patch and two parasitic patches for high gain and wide bandwidth characteristics. To obtain higher gain, the unit elements are expanded into a $1{\times}8$ may using a mixture of series and parallel feeds. The proposed antenna has horizontal polarization for the Rx band and vertical polarization for the Tx band. To verify the practicality of this antenna, we fabricated a three-stacked patch array antenna and measured its performance. The gain of the array antenna in the Rx and Tx bands exceeds 17 and 18 dBi, respectively. The impedance bandwidth is over 10 % in both bands. The cross-polarization level is below -25 dB, and the sidelobe level is below -9.4 dB.

Prototype Development of a Three-wheel Riding Cultivator and Its Basic Performance

  • Lee, Beom Seob;Yoo, Soonam;Lee, Changhoon;Choi, Il Su;Choi, Yong;Yun, Young Tae
    • Journal of Biosystems Engineering
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    • v.43 no.4
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    • pp.285-295
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    • 2018
  • Purpose: The aim of this study is to develop a three-wheel riding cultivator for improving the performance of the current four-wheel riding cultivators in the market. Methods: A prototype three-wheel riding cultivator with the rated power of 15.5-kW, a primary hydrostatic and a two-speed selective gear transmission shifts, front/rear three-wheel drive, a hydraulic wheel tread adjustment, and the mid-section attachment of the major implements was designed and constructed. Its specifications and basic performance are investigated. Results: The maximum speeds of the prototype at the low and high stages were measured to be approximately 7.31, and 11.29 km/h in forward travel, respectively, and approximately 3.60, and 6.37 km/h in rearward travel, respectively. The minimum ground clearance is shown to be 670 mm. The rotating speeds of the power takeoff (PTO) shaft at the low and high stages are shown to be approximately 795 and 1,140 rpm, respectively. The tread of the rear wheels, the minimum radius of turning, and the maximum lifting height of the parallel link device are measured to be within 1,320-1,720 mm, 2.80 m, and 390 mm, respectively. Approximately 25.3% and 74.7% of the total weight of the prototype are distributed in the front and rear wheels on flat ground, respectively. When the tread of rear wheels increased from 1,320 to 1,720 mm, the left and right static lateral overturning angles increased from $33.4^{\circ}$ to $39.1^{\circ}$ and from $29.0^{\circ}$ to $36.1^{\circ}$, respectively. Conclusions: The prototype three-wheel riding cultivator showed a wide range of travel and PTO speeds, high minimum ground clearance, small minimum radius of turning, and easy control of the rear wheel tread. Further, the easy observation of cultivating operations by mid-mounting the implements can improve quality of work. Therefore, the prototype is expected to contribute to the riding mechanization of cultivating operations for various upland crops in Korea.

The Effect of Carbide Precipitation on the High Temperature Deformation of Ni3Al and TiAl

  • Han, Chang-Suk;Kim, Jang-Woo;Kim, Young-Woo
    • Korean Journal of Metals and Materials
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    • v.47 no.3
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    • pp.147-154
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    • 2009
  • The effect of carbon addition on the microstructures and mechanical properties of $Ni_3Al$ and TiAl intermetallic alloys have been characterized. It is shown that carbon is not only an efficient solid solution strengthener in $Ni_3Al$ and TiAl, it is also an efficient precipitation strengthener by fine dispersion of carbide. Transmission electron microscope investigation has been performed on the particle-dislocation interactions in $Ni_3Al$ and TiAl intermetallics containing various types of fine precipitates. In an $L1_2$-ordered $Ni_3Al$ alloy with 4 mol.% of chromium and 0.2~3.0 mol.% of carbon, fine octahedral precipitates of $M_{23}C_6$ type carbide, which has the cube-cube orientation relationship with the matrix, appear during aging. Typical Orowan loops are formed in $Ni_3Al$ containing fine dispersions of $M_{23}C_6$ particles. In the L10-ordered TiAl containing 0.1~2.0 mol.% carbon, TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$ matrix, appear in the matrix and preferentially at dislocations. Selected area electron diffraction (SAED) patterns analyses have shown that the needle-shaped precipitate is $Ti_3AlC$ of perovskite type. The orientation relationship between the $Ti_3AlC$ and the $L1_0$ matrix is found to be $(001)_{Ti3AlC}//(001)_{L10\;matrix}$ and $[010]_{Ti3AlC}//[010]_{L10\;matrix}$. By aging at higher temperatures or for longer period at 1073 K, plate-like precipitates of $Ti_2AlC$ with a hexagonal structure are formed on the {111} planes of the $L1_0$ matrix. The orientation relationship between the $(0001)_{Ti2AlC}//(111)_{L10\;matrix}$ is and $[1120]_{Ti2AlC}//[101]_{L10\;matrix}$. High temperature strength of TiAl increases appreciably by the precipitation of fine carbide. Dislocations bypass the carbide needles at further higher temperatures.

A Study on GPU-based Iterative ML-EM Reconstruction Algorithm for Emission Computed Tomographic Imaging Systems (방출단층촬영 시스템을 위한 GPU 기반 반복적 기댓값 최대화 재구성 알고리즘 연구)

  • Ha, Woo-Seok;Kim, Soo-Mee;Park, Min-Jae;Lee, Dong-Soo;Lee, Jae-Sung
    • Nuclear Medicine and Molecular Imaging
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    • v.43 no.5
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    • pp.459-467
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    • 2009
  • Purpose: The maximum likelihood-expectation maximization (ML-EM) is the statistical reconstruction algorithm derived from probabilistic model of the emission and detection processes. Although the ML-EM has many advantages in accuracy and utility, the use of the ML-EM is limited due to the computational burden of iterating processing on a CPU (central processing unit). In this study, we developed a parallel computing technique on GPU (graphic processing unit) for ML-EM algorithm. Materials and Methods: Using Geforce 9800 GTX+ graphic card and CUDA (compute unified device architecture) the projection and backprojection in ML-EM algorithm were parallelized by NVIDIA's technology. The time delay on computations for projection, errors between measured and estimated data and backprojection in an iteration were measured. Total time included the latency in data transmission between RAM and GPU memory. Results: The total computation time of the CPU- and GPU-based ML-EM with 32 iterations were 3.83 and 0.26 see, respectively. In this case, the computing speed was improved about 15 times on GPU. When the number of iterations increased into 1024, the CPU- and GPU-based computing took totally 18 min and 8 see, respectively. The improvement was about 135 times and was caused by delay on CPU-based computing after certain iterations. On the other hand, the GPU-based computation provided very small variation on time delay per iteration due to use of shared memory. Conclusion: The GPU-based parallel computation for ML-EM improved significantly the computing speed and stability. The developed GPU-based ML-EM algorithm could be easily modified for some other imaging geometries.

The Study of Dose Change by Field Effect on Atomic Number of Shielding Materals in 6 MeV Electron Beam (6 MeV 전자선의 차폐물질 원자번호와 조사야 크기에 따른 선량변화 연구)

  • Lee, Seung Hoon;Kwak, Keun Tak;Park, Ju Kyeong;Gim, Yang Soo;Cha, Seok Yong
    • The Journal of Korean Society for Radiation Therapy
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    • v.25 no.2
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    • pp.145-151
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    • 2013
  • Purpose: In this study, we analyzed how the dose change by field size effects on atomic number of shielding materials while using 6 MeV election beam. Materials and Methods: The parallel plate chamber is mounted in $25{\times}25cm^2$ the phantom such that the entrance window of the detector is flush with the phantom surface. phantom was covered laterally with aluminum, copper and lead which thickness have 5% of allowable transmission and then the doses were measured in field size $6{\times}6$, $10{\times}10$ and $20{\times}20cm^2$ respectively. 100 cGy was irradiated using 6 MeV electron beam and SSD (Source Surface Distance) was 100 cm with $10{\times}10cm^2$ field size. To calculate the photon flux, electron flux and Energy deposition produced after pass materals respectively, MCNPX code was used. Results: The results according to the various shielding materials which have 5% of allowable transmission are as in the following. Thickness change rate with field size of $6{\times}6cm^2$ and $20{\times}20cm^2$ that compared to the field size of $10{\times}10cm^2$ found to be +0.06% and -0.06% with aluminum, +0.13% and -0.1% with copper, -1.53% and +1.92% with lead respectively. Compare to the field size $10{\times}10cm^2$, energy deposition for $6{\times}6cm^2$ and $20{\times}20cm^2$ had -4.3% and +4.85% respectively without shielding material. With aluminum it had -0.87% and +6.93% respectively and with lead it had -4.16% and +5.57% respectively. When it comes to photon flux with $6{\times}6cm^2$ and $20{\times}20cm^2$ of field sizes the chance -8.95% and +15.92% without shielding material respectively, with aluminum the number -15.56% and +16.06% respectively and with copper the chance -12.27% and +15.53% respectively, with lead the number +12.36% and -19.81% respectively. In case of electron flux in the same condition, the number -3.92% and +4.55% respectively without shielding material respectively, with aluminum the number +0.59% and +6.87% respectively, with copper the number -1.59% and +3.86% respectively, with lead the chance -5.15% and +4.00% respectively. Conclusion: In this study, we found that the required thickness of the shielding materials got thinner with low atomic number substance as the irradiation field is increasing. On the other hand, with high atomic number substance the required thickness had increased. In addition, bremsstrahlung radiation have an influence on low atomic number materials and high atomic number materials are effected by scattered electrons.

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Interface structure and anisotropic strain relaxation of nonpolar a-GaN on r-sapphire

  • Gong, Bo-Hyeon;Jo, Hyeong-Gyun;Song, Geun-Man;Yun, Dae-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.31-31
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    • 2010
  • The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

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COVID-19 Rapid Antigen Test Results in Preschool and School (March 2 to May 1, 2022) (유치원·학교 구성원의 코로나19 신속항원검사 결과(2022년 3월 2일부터 5월 1일까지))

  • Gowoon Yun;Young-Joon Park;Eun Jung Jang;Sangeun Lee;Ryu Kyung Kim;Heegwon Jeong;Jin Gwack
    • Pediatric Infection and Vaccine
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    • v.31 no.1
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    • pp.113-121
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    • 2024
  • Purpose: In response to the surge in coronavirus disease 2019 (COVID-19) omicron variant cases, we have implemented preemptive testing for preschool and school. The purpose is to quickly detect COVID-19 cases using a rapid antigen test (RAT) kit so that normal school activities can continue. Methods: The results entered in The Healthcare Self-Test App were merged with the information on the status of confirmed cases in the COVID-19 Information Management System by Korea Disease Control and Prevention Agency (KDCA) for preschool and school of students and staffs March 2 to May 1, 2022 to analyze the RAT positive rate and positive predictive value of RAT. Results: In preschool and school 19,458,575 people were tested, weekly RAT positive rate ranged from 1.10% to 5.90%, positive predictive value of RAT ranged from 86.42% to 93.18%. By status, RAT positive rate ranged from 1.13% to 6.16% for students, 0.99% to 3.93% for staffs, positive predictive value of RAT ranged from 87.19% to 94.03% for students, 77.55% to 83.10% for staffs. RAT positive rate by symptoms ranged from 76.32% to 88.02% for those with symptoms and 0.34% to 1.11% for those without symptoms. As a result of preschool and school RAT, 943,342 confirmed cases were preemptively detected, before infection spread in preschool and school. Conclusions: RAT was well utilized to detect confirmed cases at an early stage, reducing the risk of transmission to minimize the educational gap in preschool and school. To compensate for the limitations of RAT, further research should continue to reevaluate the performance of RAT as new strains of viruses continue to emerge. We will have to come up with various ways to utilize it, such as performing periodic and repeated RAT and parallel polymerase chain reaction.