• Title/Summary/Keyword: Paper EL

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Effect of ZnS Buffer Layer on Inorganic EL Device

  • Kim, Duck-Gon;Park, Lee-Soon;Kum, Tae-Il;Lee, Sang-Mok;Sohn, Sang-Ho;Jung, Sang-Kooun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1629-1631
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    • 2007
  • Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

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A Study on the Characteristic for EL Driving Resonant Inverter (EL 구동용 공진형 인버터 특성에 관한 연구)

  • 윤석암
    • Proceedings of the KIPE Conference
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    • 2000.07a
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    • pp.380-383
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    • 2000
  • This paper presents about EL(electro-luminescent) driver with inverter Inverter is constructed by using characteristic of FET and its output characteristics is analysed for the variation of gate bias frequency and load. The optimum operating condition of inverter is that the gate bias frequency of FET equal two resonant frequency of circuit.

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A Study for the Voice channel extension method using Code Division Multiplexing (부호분할 다중화 기법을 이용한 음성 회선 확대 방안 연구)

  • 권기형;신용조
    • Journal of the Korea Society of Computer and Information
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    • v.3 no.4
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    • pp.103-109
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    • 1998
  • Domastic telephony transmission networks mainly using El in 2.048Mb㎰ is composed to 30 channels and each channel is assigned to 64Kb㎰ voice coding rate. El method always uses TDM, so it is fixed channels. In this paper, it shows that using CDM enlarge the subscribers and voice channels

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MAPS PRESERVING GENERALIZED PROJECTION OPERATORS

  • Hassane Benbouziane;Kaddour Chadli;Mustapha Ech-cherif El Kettani
    • Communications of the Korean Mathematical Society
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    • v.39 no.3
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    • pp.717-729
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    • 2024
  • Let 𝓑(H) be the algebra of all bounded linear operators on a Hilbert space H with dim(H) > 2. Let 𝒢𝒫(H) be the subset of 𝓑(H) of all generalized projection operators. In this paper, we give a complete characterization of surjective maps 𝚽 : 𝓑(H) → 𝓑(H) satisfying A-𝛌B ∈ 𝒢𝒫(H) ⇔ 𝚽(A) - 𝛌𝚽(B) ∈ 𝒢𝒫(H) for any A, B ∈ 𝓑(H) and 𝛌 ∈ ℂ.

Assessment of the ENSO Impact on Frequency and Spatial Distribution of Rainfall in South Korea (ENSO가 우리나라 강우의 확률빈도와 공간분포에 미치는 영향)

  • Kim, Soo Jun;Kim, Byung Sik;Kim, Hung Soo
    • Journal of Wetlands Research
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    • v.10 no.2
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    • pp.143-153
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    • 2008
  • The purpose of this paper is to evaluate impacts of ENSO on frequency and spatial distribution of rainfall in South Korea. In this paper, First, rainfall data in 60 climate stations were categorized into Warm(El Nino), Cold(La Nina), Normal episodes based on the Cold & Warm Episodes by Season, then 100 years of daily rainfall data were generated for each episodic events(El Nino, La Nina, Normal) using Markov Chain model. Finally, Estimating frequency based flood and comparison for each episodes were conducted. From the results, it shows that there are significant changes in the rainfall frequency and the spatial distribution of rainfall among Warm(EL Nino), Cold(La Nina) and Normal episodes.

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High brightness property of Power Electroluminescent Device using ZnS:Cu (ZnS:Cu를 이용한 후막 전계발광소자의 고휘도 특성)

  • Lee, Jong-Chan;Park, Dae-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.349-353
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    • 1999
  • In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

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Quantitative Analysis on Near Band Edge Images in GaAs Wafer (GaAs 웨이퍼의 대역단 영상에 대한 정량적 해석)

  • Kang, Seong-jun;Na, Cheolhun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.5
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    • pp.861-868
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    • 2017
  • Near band infrared imaging technique has adopted for imaging EL2 and shallow level distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near bandgap infrared transmission, is both rapid and non-destructive. Until now no quantitative analysis has been reported for near band edge region which gives the reverse contrast on EL2 absorption images. This paper presents the spectral, spatial and temperature dependence of photoquenching forward and inverse mechanism in the band edge domain for cells and walls and for direct and inverted contrast conditions during transitory regimes. The difference in the threshold for the EL2w and EL2b defects could be attributed to the contribution of a different electrical assistance due to a different species of impurities. Quantitative analysis results show an increased density of EL2w and a small reduction of EL2b in the region of the walls where there is a high density of dislocations.

탄소나노튜브와 ZnS:Cu,Cl 형광체 무기 EL

  • Kim, Jin-Yeong;Jeong, Dong-Geun;Yu, Se-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.68-68
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    • 2010
  • Electroluminescence (EL) characteristics of green-emission ZnS:Cu,Cl-based ac-type inorganic powder electroluminescent structures were examined by inserting carbon nanotubes (CNTs) into or next to the dielectric layer. For the top-emission type EL structure, where the luminescent light was emitted from the top of the structure, was fabricated by assembling in order, a top electrode, an emitting layer, a dielectric layer, and a bottom electrode from the top. $BaTiO_3$ powder mixed with CNTs was used as a dielectric layer or CNTs were deposited between the bottom electrode and $BaTiO_3$ dielectric layer in order to improve the role of the dielectric layer in the structure. Luminance of an EL structure with CNTs inclusion was greatly enhanced possibly due to the high dielectric constant in the dielectric layer of $BaTiO_3$/CNTs, which is one of hot research topics utilizing nano-objects for intensifying dielectric constant and reducing dielectric loss at the same time. A variation on the CNTs themselves and their inclusion methods in the dielectric layer has been exhorted, and the underlying mechanism for the role of CNTs in the EL structure will be explained in the poster. In order to extend the flexibility of EL devices, EL devices were fabricated on the paper substrate and their performance was compared other EL devices on the plastic-based substrate.

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Provably Secure Length-Saving Public-Key Encryption Scheme under the Computational Diffie-Hellman Assumption

  • Baek, Joon-Sang;Lee, Byoung-Cheon;Kim, Kwang-Jo
    • ETRI Journal
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    • v.22 no.4
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    • pp.25-31
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    • 2000
  • Design of secure and efficient public-key encryption schemes under weaker computational assumptions has been regarded as an important and challenging task. As far as ElGamal-type encryption schemes are concerned, some variants of the original ElGamal encryption scheme based on weaker computational assumption have been proposed: Although security of the ElGamal variant of Fujisaki-Okamoto public -key encryption scheme and Cramer and Shoup's encryption scheme is based on the Decisional Diffie-Hellman Assumption (DDH-A), security of the recent Pointcheval's ElGamal encryption variant is based on the Computational Diffie-Hellman Assumption (CDH-A), which is known to be weaker than DDH-A. In this paper, we propose new ElGamal encryption variants whose security is based on CDH-A and the Elliptic Curve Computational Diffie-Hellman Assumption (EC-CDH-A). Also, we show that the proposed variants are secure against the adaptive chosen-ciphertext attack in the random oracle model. An important feature of the proposed variants is length-efficiency which provides shorter ciphertexts than those of other schemes.

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Design and Implementation of Driver Circuit for AC TFEL Flat Panel Display (AC TFEL 평판표시장치의 구동회로 설계 및 구현)

  • 오건창;김명식;권용무;오명환;김덕진
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.30B no.10
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    • pp.27-34
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    • 1993
  • In this paper, a driver system is designed and implemented to achieve 4-level gray scale CH TFEL(Thin Film ElectroLuminescent) flat panel display. To implement the driver system, commercial EL driver IC chips are used to apply high voltage pulses to the EL panel and a high voltage switching circuit is designed for the EL driver IC. A new method of reducing storage delay time of transistor is proposed to obtain a reliable switching circuit. The controller for EL driver and switching circuit is also designed. The designed driving scheme applicable to EL display with 4-level gray scale is based on the linear characteristics of brightness vs. frequency of AC TFEL. By experiment, it has been shown that the brightness of AC TEFL display with the implemented driving system is controlled by the level of gray scale.

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