• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.12
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• pp.1937-1941
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• 2004

We present lateral actuated piezoelectric actuator using U-shaped PZT strip and lever structure for the RF switch application. In the previous study of RF switch, they used horizontal contact switch fabricated by thin film metals. However, thin film metals could not generate large contact force due to low stiffness. In this work, we suggest lateral contact switch which makes large contact force by increasing stiffness. In addition, we use PZT actuator for the high force actuation. Generally actuator using thin film PZT moves to the vertical direction due to the neutral axis shift. Therefore we need lateral motion generation mechanism based on the thin film PZT actuator. In order to increase lateral motion of thin film PZT actuator, we use U-shaped PZT actuator using residual stress control. Also, thin film PZT actuator can generate very small lateral motion of 120${\times}$10$^{-6}$ ${\mu}{\textrm}{m}$/V for d$_{31}$ mode, thus we suggest lever structure to increase stroke amplification. From the experimental study, fabricated PZT actuator shows maximum lateral displacement of 1 ${\mu}{\textrm}{m}$, and break down voltage of the thin film PZT actuator is above 16V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• Structural Monitoring and Maintenance
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• v.9 no.2
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• pp.129-155
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• 2022

In this study, parametric analyses on a hoop-type PZT (lead-zirconate-titanate) interface are performed to estimate the effects of the PZT interface's materials and geometries on sensitivities of impedance responses under strand breakage. The paper provides a guideline for installing the PZT interface suitable in tendon anchorages for damage-sensitive impedance signatures. Firstly, the concept of the PZT interface-based impedance monitoring technique in prestressed tendon anchorage is briefly described. A FE (finite element) analysis is conducted on a multi-strands anchorage equipped with a hoop-type PZT interface for analyzing materials and geometric effects. Various material properties, geometric sizes of the interface, and PZT sensor are simulated under two states of prestressing force for acquiring impedance responses. Changes in impedance signals are statistically quantified to analyze the effect of these factors on damage-sensitive impedance monitoring in the tendon anchorage. Finally, experimental analyses are performed to demonstrate the effects of materials and geometrical properties of the PZT interface on damage-sensitive impedance monitoring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.39-42
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• 2000

The effect of excess Pb contents on the etching of PZT thin films and their electrical properties has been investigated. Ferroelectric PZT(53/47) thin films were prepared by the metal alkoxide-based Sol-Gel method, in which they were spin-coating on P7Ti/Si02/Si substrate using the PZT(53/47) stock solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar/Cl$_2$/BCl$_3$ plasma. The etch rate of PZT film was 2450 $\AA$/min at Ar(20)/BCl$_3$(80) gas mixing ratio and substrate temperature of 8$0^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.129-133
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately $60{\mu}m$. All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at $1100^{\circ}C$, the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13 kV/cm, respectively.

• The Journal of the Acoustical Society of Korea
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• v.28 no.8
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• pp.796-805
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• 2009

In this paper, a fabrication process for PZT preform of 1-3 type piezo-composite were studied using powder injection molding (PIM). The viscosity and the Pressure-Volume-Temperature (PVT) characteristics of the fabricated PZT feedstock were analyzed. The filling patterns, pressure, temperature distributions, and forming defects of the preform were analyzed with 3D TIMON commercial packages during PIM process. Also the fabrication conditions and the delivery system of the preform were optimized during the entire PIM process. Based on the simulated results, the preform having uniform distributions of the PZT rod was fabricated with the PIM process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.907-912
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• 2005

Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.888-893
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• 2004

This paper proposed a dual actuator using bimorph PZT for information storage device based on prove array NSOM(Near-field Scanning Optical Microscopy). The gap between the media and the optical head should be maintained within the optical tolerance. Therefore, a new actuator having high sensitivity is required. Bimorph PZT, which has fast access time and high sensitivity characteristic, is suitable for this precise actuating system. This paper is focused on derivation of mathematical model of dual bimorph PZT actuator and control algorithm. Hamilton's principle was used for mathematical model. The model is verified by FEA(Finite Element Analysis), and compared with experimental results. Different control algorithms were used f3r two bimorph PZT actuating same direction and opposite direction. The gap between recording media and optical head was controlled within 20nm in experiment.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.05a
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• pp.1004-1008
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• 2003

Near-filed optical storage using cantilever aperture tip is a promising way fer next generation optical data storage. To enhance the speed of reading and writing data, gap between tip and media should be controlled fast and precisely within near field region. In this paper, several PZT actuators are analyzed far constructing dual servo control algorithm: coarse actuators(stact. PZT, bimorph PZI) for media surface inclination and One actuator(film PZT) for media surface roughness. Dynamic analysis of stack PZT, bimorph PZT, and film PZT are performed through the frequency response. Based on the frequency response and mathematical model, fast analog controller is designed.