• Fire Science and Engineering
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• v.10 no.2
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• pp.40-51
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• 1996

A synthesis process for PZT powder using NH$_3$ gas as a precipitator in a bubble column reactor was experimentally successful in develope a production process of Piezoelectric ceramic PZT powder. Also as a reaction by coprecipitation, the crystalized PZT ceramic powder at the condition of over pH 9 could be attained. The time needed for reaction on the condition of NH$_3$ gas flow rate=0.5 1/min, Ar gas flow rate=2.0 1/min, Feed flow rate=2.33 ml /sec was less than five minutes, so it could synthesize PZT powder for such a few moments. And the synthesized PZT powder was 0.17${\mu}{\textrm}{m}$ in diameter on an average.

• Journal of Korean Society of Steel Construction
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• v.22 no.5
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• pp.477-485
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• 2010

Various monitoring sensors are used to predict and detect structural damage. Smart sensors, such as glass-fiber sensors, PZT, and MEMS, among others, have replaced traditional sensors. They are now being used in many areas. This study aims to predict the damage by measuring the PZT voltage attached on the specimen by the applied impact load. In the experiment to detect damages in beam connection, simple $H-400{\times}200{\times}8{\times}13$ beams were spliced with bolts. The results of FFT between PZT sensor and accelrometer were compared to measure the sensitivity of the PZT sensor. The damage to the beam was presumed by loosening the bolt, and then the damage measurement was accompanied. Secondly, a steel $PL600{\times}65{\times}5.8$ plate beam was fabricated for the purpose of experimenting on damage measurement. Impact loading test on three different locations was carried out. Damage width varied between 6~42mm on both sides by cutting, using a steel saw. The ratio of frequencies before and after the damage was computed to quantify the damage level by using FFT, and the change in mode pattern with the increased damage was investigated to measure the damage.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.34-34
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• 2003

Piezoelectric or magnetostrictive materials, known as smart materials, have been researched widely for sensors or actuators in micro system technology. In our research, thick sol-gel lead zirconate titanate(Pb(Zr$\sub$1-x/Ti$\sub$x/)O$_3$) films were fabricated and their characteristics were investigated f3r angular rate sensor applications. The thickness of the PZT films is 1.5${\mu}$m, which is required by a vibration angular rate sensor for a good actuation and sensing. The remnant polarization of the PZT flms is 12.0 ${\mu}$C/$\textrm{cm}^2$. The electromechanical constants of PZT thin film showed the value of susceptance(B) of 4800${\mu}$ s at capacitance of 790pF. The PZT films were applied to the vibration angular rate sensor structure and the vibration of 1.78 ${\mu}$m in amplitude at the resonant frequency of 35.8㎑ was obtained by driving voltage of 5V$\sub$p-p/ of bulk piezoelectric materials with out of phase signal through voltage and inverting amplifier.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.920-926
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• 1994

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.246-252
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• 2002

Two kinds of PZT cantilevers integrated with a piezoresistor have been newly designed, fabricated, and characterized for high speed AFM. In first cantilever, a piezoresistor is used to sense atomic force acting on tip, while in second cantilever, a piezoresistor is integrated to calibrate hysteresis and creep phenomena of the PZT cantilever. The fabricated PZT cantilevers provide high tip displacement of $0.55\mu\textrm{m}/V$ and high resonant frequency of 73 KHz. A new cantilever structure has been designed to prevent electrical coupling between sensor and PZT actuator and the proposed cantilever shows 5 times lower coupling voltage than that of the previous cantilever. The fabricated PZT cantilever shows a crisp scanned image at 1mm/sec, while the conventional piezo-tube scanner shows blurred image even at $180\mu\textrm{m}/sec$. The non-linear properties of the PZT actuator are also well calibrated using the piezoresistive sensor for calibration.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1771-1773
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• 1999

Ferroelectric PZT(10/90)/(90/10)heterolayered thin films were fabricated by the alkoxide-based Sol-Gel method Electric and dielectric properties of PZT(10/90)/(90/10) heterolayered thin films have been investigated, focusing on the effect of PZT/PZT and PZT/electrode interface on the heterolayered films. Dielectric constant increased with increasing the number of coatings. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered thin films deposited on Pt/Ti/$SiO_2$/Si were $7.18{\mu}C/cm$, $68.5kV/cm^2$, respectively. Leakage current, densities were increased with increasing the number of coatings, and the value of the PZT-4 film deposited on the Pt/Ti/$SiO_2$/Si substrate was about $7{\times}10^{-8}A/cm^2$ at 0.05MV/cm.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.146-151
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• 1996

PZT powders were prepared by the molten salt synthesis method. The porous PZT ceramics were made from a mixture of PZT and polyvinylalcohol(PVA) by BURPS(Bumout Plastic Sphere) technique. The 3-3 type composites were fabricated by impregnating an sintered porous PZT ceramics with various polymer matrices. The relative permittivity of 3-3 type composite specimens was shown 860-1,100 smaller than that of solid PZT ceramics(2,100), and the dissipation factors of composite specimens were about 0.02 to 0.03. The piezoelectric coefficient d$_{33}$ of composite specimens(285-328*10$^{12}$ C/N) was comparable with that of single phase PZT specimens(364*10$^{-12}$ C/N). The thickness mode coupling factor k$_{t}$(O.5-0.6) of composite specimens was comparable with that of single phase PZT specimens(k$_{t}$-0.7), and the mechanical quality factor of composite specimens was smaller than 10, and thus these 3-3 type composite specimens would be believed as a good candidates for broad band transducer applications.ons.

• Journal of the Korea institute for structural maintenance and inspection
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• v.14 no.5
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• pp.72-78
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• 2010

A CFRP (Carbon Fiber-Reinforced Plastic) strengthening method is being very widely used to increase the load-carrying capacity of host structures, especially for bridges. However, not only flexure and shear failures but debonding failure also might occur in CFRP strengthened concrete structures. The CFRP debonding failure would cause a collapse accident of the host structure. Therefore, real-time health monitoring about the CFRP bonding condition is strongly required. In this study, a feasibility of the impedance-based damage detection method using PZT sensors is investigated through a series of experimental study monitoring both concrete cracks and CFRP debonding defects.