• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.4
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• pp.18-23
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• 2004

In this paper, material non-linear behavior of PZT wafer(3203HD, CTS) under high electric field and stress is experimentally investigated and the non-linearity of the PZT wafer is numerically simulated. Empirical functions that can represent the non-linear behavior of the PZT wafer have been extracted based on the measured piezo-strain under stress. The functions are implemented in an incremental finite element formulation for material non-linear analysis. New definition of the piezoelectric constant and the incremental strain are incorporated into the finite element formulation for a better reproduction of the non-linear behavior. With the new definition of the in incremental piero-strain the measured non-linear behavior of the PZT wafer has been accurately reproduced even for high electric field. For validation of the measured non-linear characteristics and the proposed approach, a PZT bimorph beam actuator has been numerically and experimentally tested. The predicted actuation displacement, based on the material nonlinear finite element analysis, showed a good agreement with the measured one.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.1
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• pp.61-65
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• 2010

A commercially available soft PZT wafer that is poled in thickness direction is subjected to longitudinal tensile stress loading in both short and open-circuit conditions. Variations of electric displacement in thickness direction and in-plane strains are measured over time during the loading. Different material responses in the two electrical boundary conditions are explained by the effects of piezoelectrically produced internal electric field on linear material moduli and domain switching mechanisms. Finally, a free energy model of normal distribution is introduced to explain the observed creep behavior, and its predictions are compared with experimental observations.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2009.04a
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• pp.239-242
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• 2009

구조물의 표면에 부착된 압전소자(이하 PZT)의 전기역학적 어드미턴스(Electro-mechanical admittance)는 PZT와 구조물의 상호작용에 의해 발생하는 PZT의 압전효과와 유전성(dielectric)이 결합되어 발생되는 신호이다. 고주파수 대역에서 PZT의 전기역학적 어드미턴스는 구조물의 국부손상에 민감하게 반응하는 것으로 알려져 있다. 실험에서 측정된 PZT의 전기역학적 어드미턴스 분석에 널리 쓰이는 Liang 모델은 구조물을 단자유도계로 단순화하여 구조물의 동적특성이 전기역학적 어드미턴스에 미치는 영향을 정확하게 나타내기 어렵다. 유한요소법을 통해 PZT와 구조물의 상호작용을 해석하면 이러한 문제점을 해결할 수 있다. 그러나 고주파 대역에서 정확한 해석을 위해서는 유한요소망을 조밀하게 구성해야 하므로 많은 계산비용이 수반된다. 이 연구에서는 유한요소법과 비교하여 월등히 적은 계산비용으로 고주파 대역의 동적 응답을 매우 정확하게 모사할 수 있는 스펙트럼 요소법(Spectral Element Method ; 이하 SEM)을 통해 판구조물에 부착된 PZT의 전기-역학적 어드미턴스를 해석한다. 수치 예제 및 실험 예제를 통하여 내민보에 부착된 PZT에서 발생하는 전기-역학적 어드미턴스를 취득하고 이를 SEM해석 결과와 비교한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.139-140
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• 2006

PZT박막은 비휘발성 재료로 유전율이 높고 항전력이 작으면서 잔류 분극랑이 크기 때문에 적합한 특성을 가지고 FeRAM에 매력적인 물질이다. CMP(chemical mechanical polishing)는 기존의 회생막의 전면 식각 공정과는 달리 특정 부위의 제거 속도를 조절함으로써 평탄화 하는 기술로 wafer 전면을 회전하는 탄성 패드 사이에 액상의 Slurry를 투입하여 연마하는 기술이다. 본 논문에서는 CMP 공정으로 제조한 PZT박막 캐패시터에서 CMP 후처리공정(세척)의 유무 및 종류에 따라 피로특성에 대하여 연구하였다, PZT 박막의 캐패시터의 피로 특성을 연구한 결과 CMP 후처리공정 SC-l용액을 사용하여 세정공정을 하였을때 가장 향상된 PZT 캐패시터의 피로특성이 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.13-13
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• 2009

We have investigated the fabrication and properties of bendable PZT film formed on plastic substrates for the application in flexible memory. These devices used the PZT active layer formed on $SiO_2/Si$ wafer by sol-gel method with optimized device layouts and Pt electrodes. After etching Pt/PZT/Pt layers, patterned by photolithography process. these layers were transferred on PET plastic substrate using elastomeric stamp. The level of performance that can be achieved approaches that of traditional PZT. devices on rigid bulk wafers.

• Journal of Electrical Engineering and Technology
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• v.6 no.1
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• pp.119-122
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• 2011

A new high speed AFM probe has been proposed and fabricated. The probe is integrated with PZT actuated cantilever realized in bulk silicon wafer using heavily boron doped silicon as an etch stop layer. The cantilever thickness can be accurately controlled by the boron diffusion process. Thick SCS cantilever and integrated PZT actuator make it possible to be operated at high speed for fast imaging. The resonant frequency of the fabricated probe is 92.9 kHz and the maximum deflection is 5.3 ${\mu}m$ at 3 V. The fabricated probe successfully measured the surface of standard sample in an AFM system at the scan speed of 600${\mu}m$/sec.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.3
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• pp.37-44
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• 2004

This paper deals with the performance analysis of LIPCA(Light-weight Piezo-Composite actuator) including the material nun-linearity of the embedded 3203HD PZT wafer. For this analysis, we used a piezo-shell element code based on a nine-node assumed strain shell element formulation. The material non-linearity was implemented in the formulation due to a large observed discrepancy between the measured displacement and the computed actuation displacement based on the linear analysis. An experimentally extracted piezo-strain function of the PZT wafer and incremental formulation were incorporated into the linear finite element code to improve the accuracy of the estimated actuation displacement of the LIPCA. The non-linear piezo-shell program was used to predict the non-linear performance of the LIPCA. The simulated actuation displacement from the non-linear code showed much better agreement with the measured data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.467-468
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• 2006

In this work, we present the comparison between $d_{31}\;and\;d_{33}$ mode characterization using the PZT micro-actuator for large displacement. The PZT micro-actuator consisted of Si, PZT, and Pt layer on SOI wafer. The electrode shapes were laminated and interdigitated for $d_{31}\;and\;d_{33}$ mode, respectively. In order to characterize the actuation mode, we measured the displacement using laser interferometer. The maximum displacement of d31 mode was $12.2{\mu}m$ at 10V, the actuation characterization of d31 was better than that of d33 mode. We estimated that displacement of d33 mode would be larger than that of d31 above 30V.