• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.64-64
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• 1995

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1999년도 제2회 총회 및 춘계학술발표회
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• pp.52-52
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• 1999

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.198-199
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• 2002

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.14-14
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• 2010

Recently, low temperature co-fired ceramic (LTCC) technology has gained a remarkable application potential in sensors, actuators and micro systems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of annealing treatment on the electrical properties of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. Then, the change of the crystallization of the films were investigated under various annealing temperatures and times. The results showed that the crystallization of the films were enhanced as increasing annealing temperatures. The film, annealed at $700^{\circ}C$, 3min, was well crystallized in the perovskite structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1512-1514
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• 2001

In this work, PZT thin films were etched as a function of $Cl_2$/Ar and additive $CF_4$ into $Cl_2$(80%)/Ar(20%). The etch rates of PZT films were 1600 $\AA$/min at $Cl_2$(80%)/Ar(20%) gas mixing ratio and 1973 $\AA$/min at 30% additive $CF_4$ into $Cl_2$(80%)/Ar(20%). Therefore the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. From XPS and SIMS analysis, metal halides and C-O, FCI and $CClF_2$ were detected. The etching of PZT films in Cl-based plasma is primarily chemically assisted ion etching and the remove of nonvolatile etch byproducts is the dominant step. Consequently, we suggest that the increase of Cl radicals and the volatile oxy-compound such as $CO_y$ are made by adding $CF_4$ into $Cl_2$/Ar plasma. Therefore, the etch rate of PZT in $CF_4/Cl_2/Ar$ plasma is faster than in $Cl_2$/Ar. The etched profile of PZT films was obtained above 70$^{\circ}$ by the SEM micrograph.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.743-745
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• 2002

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

• 한국재료학회지
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• 제10권10호
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• pp.684-690
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• 2000

Metal-Ferroelectric-Metal(MFM) 구조의 개퍼시터에서 $Pb(Zr,Ti)O_3(PZT)$-전극 계면층이 PZT 박막 특성에 기여하는 영향을 알아보기 위하여 Pt/PZT/계면층/Pt/$TiO_2/SiO_2$/Si 구조의 캐퍼시터를 제작하였다. 계면층으로 사용될 물질들 중에서 $PbTiO_3(PT)$ 층을 sol-gel 방법으로 형성하였으며, PbO, $ZrO_2,\;TiO_2$ 층들을 reactive sputtering 방법으로 형성하였다. PZT박막을 구성하는 원소들로 이루어진 단순 산화물들의 특성을 평가하기 위하여 PbO, $ZrO_2,\;TiO_2$를 계면층으로 사용하여 $600^{\circ}C$에서 열처리를 실시하였고, 이 경우에는 $TiO_2$가 가장 우수하게 PZT의 결정립 크기를 미세하게 하는 효과를 보였으나, 두께가 증가함에 따라 표면 거칠기가 증가하고 anatase 상으로 남기 때문에 강유전특성이 열화되었다. 반면에 PT 박막을 계면층으로 사용한 경우에는 결정립 크기의 감소와 더불어 전기적인 특성도 향상되었다. 또한 PZT의 핵생성 위치를 판단하기 위하여 PT 삽입층의 위치를 변화하며, 실험한 결과, 하부전극과 PZT 박막의 계면에 PT 삽입층을 형성하였을 경우에 가장 효과적인 seed로서의 역할을 하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.