• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.50-50
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• 1999

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.102.1-102.1
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.32.4-32.4
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.173.1-173
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.111.1-111
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.95.2-95
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.96.2-96
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.418-425
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• 2019

A piezoelectric ceramic fiber composite (PCFC) was successfully fabricated using $0.69Pb(Zr_{0.47}Ti_{0.53})O_3-0.31[Pb(Zn_{0.4}Ni_{0.6})_{1/3}Nb_{2/3}]O_3$ (PZT-PZNN) for use in small-scale wind energy harvesters. The PCFC was formed using an epoxy matrix material and an array of Ag/Pd-coated PZT-PZNN piezo-ceramic fibers sandwiched by Cu interdigitated electrode patterned polyethylene terephthalate film. The energy harvesting performance was evaluated in a custom-made wind tunnel while varying the wind speed and resistive load with two types of flutter wind energy harvesters. One had a five-PCFC array vertically clamped with a supporting acrylic rod while the other used the same structure but with a five-PCFC cantilever array. Stainless steel (thickness: $50{\mu}m$) was attached onto one side of the PCFC to form the PZT-PZNN cantilever. The output power, in general, increased with an increase in the wind speed from 2 m/s to 10 m/s for both energy harvesters. The highest output power of $15.1{\mu}W$ at $14k{\Omega}$ was obtained at a wind speed of 10 m/s for the flutter wind energy harvester with the PZT-PZNN cantilever array. The results presented here reveal the strong potential for wind energy harvester applications to supply sustainable power to various IoT micro-devices.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1115-1122
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• 1994

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.