• 제목/요약/키워드: PZT Thin Films

검색결과 284건 처리시간 0.025초

멤브레인 구조를 위한 DLC 박막의 특성에 관한 연구 (A study of properties of DLC films for membrane structure)

  • 이태용;김응권;박용섭;홍병유;송준태;박영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.748-752
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    • 2004
  • The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

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3차원 LTCC 기판을 이용한 PZT 압력센서의 주파수 응답 특성 (Frequency response characteristics of PZT pressure sensor using three dimensional LTCC substrates)

  • 허원영;이경천;황현석;이태용;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.204-204
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    • 2010
  • A development of device with reduced size and improved sensitivity is highly impotant Pb(Zr,Ti)$O_3$ thin films are widely used both to make actuator and sensor due to their high sensitivity and low cost. In this study, the feasibility of a piezoelectric presssure sensors based on hybrid low-temperaute co-fired ceramic (LTCC) technology were presented. The LTCC diaphragms with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. PZT thin films were successfully prepared on between top and bottom Au electrode with LTCC substrates using RF magnetron sputtering. In addition, The frequency response characteristics of the sensor under varing pressure has been analysed. by Network Analyser (HP-8722D). A frequency shift range has been obseved from 1.7GHz to 1.8GHz with a good linearity for applied pressure from 0 psi up to 25 psi.

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Measurement of the Pockels Coefficient of PZT Thin Films Using a Two-beam Polarization Interferometer with a Reflection Configuration

  • Spirin, Vasilii;Lee, Changho;No, Kwangsoo
    • The Korean Journal of Ceramics
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    • 제5권4호
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    • pp.409-413
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    • 1999
  • A two-beam polarization (TBP) interfermeter with a reflection configuration for measuring the linear electroptic coefficient is described and investigated experimentally and theoretically. It is shown that a TBP interferometer can be used for measuring the Pockels coefficient of thin film with a strong Fabry-Perot effect. The TBP interferometer technique is used to measure the effective differential linear electro-optic coefficient $re=r_{33}-(n_0/n_0)^3r_{13}$of lead zirconate titanate (PZT) thin film. The results are in agreement with known data.

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2단계 증착법으로 제조된 Pb(Zr,Ti)$\textrm{O}_3$ 박막의 특성 (The Properties of Pb(Zr,Ti)$\textrm{O}_3$ Thin Films Fabricated by 2-Step Method)

  • 남효진;노광수;이원종
    • 한국재료학회지
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    • 제8권12호
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    • pp.1152-1157
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    • 1998
  • 금속 타겟들을 이용한 반응성 스퍼터링법으로 $460~540^{\circ}C$범위에서 $Pt/Ti/SiO_2$/Si 기판위에 PZT 박막을 증착하였다. Perovskite상의 핵형성을 위해 Pb 휘발이 적은 저온($480^{\circ}C$)에서 짧은 시간 동안 PZT 박막을 증착한 후 Pb가 PBT 박막내에 과잉으로 함유되는 것을 억제하기 위하여 증착 온도를 증가시켜 박막을 증착하는 2단계 증착법을 사용한 결과 54$0^{\circ}C$의 고온에서도 perovskite 단일상과 화학양론비에 가까운 조성을 얻을 수 있었다. 2단계 증착법으로 제조된 PZT 박막은 우수한 전기적 특성을 나타내었으며 후속 RTA 처리로 더욱 특성을 향상시킬 수 있었는데 $17\mu$C/$\textrm{cm}^2$의 잔류분극, 45kv/cm의 coercive field, 그러고 -500kv/cm의 높은 전기장에서도 $10^{-4}$ A/$\textrm{cm}^2$의 양호한 누설전류 특성을 나타내었다.

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Synthesis and Characterization of Lead Zirconium Titanate Nanofibers by Electrospinnig

  • 최수진;박주연;고성위;강용철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.189.1-189.1
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    • 2014
  • Lead zirconium titanate (PZT) is usually used as bulk and thin films. Due to high flexibility and piezoelectric, ferroelectric and pyroelectric properties, PZT fiber has attracted in a variety of fields such as sensor devices, non-electromechanical systems and non-volatile ferroelectric memory devices. And PZT fiber can be numerously synthesized and almost with the diameter of PZT fiber thicker than $10{\mu}m$. However, the electrospinnig method is cost effective and convenient. PZT obtained by electrospinning methodhas the diameter from sub-micro to nanometer. In this paper, the PZT/PVP nanofibers were synthesized with three precursors, lead nitrate, zirconium ethoxide and titanium isopropoxide. And the PZT nanofibers were fabricated after removal of PVP by annealing process at various temperature. The obtained PZT nanofibers were characterized by means of X-ray photoelectron spectroscopy (XPS) for chemical properties, X-ray diffraction (XRD) for crystallinity and phase, scanning electron microscopy (SEM) for morphologies. The diameter of PZT nanofibers were measured with SEM. From the SEM images, we confirmed that diameter of PZT nanofibers was hundreds of nanometers and decreased with increasing the annealing temperature. When the annealing temperature increased, the crystallinity of PZT nanofibers changed from pyrochlore to perovskite structure.

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Pulsed Laser Deposition에 의해 SrRuO3/SrTiO3 기판위에 여러 가지 증착온도에서 증착된 Pb(Zr0.2Ti0.8)O3 박막의 특성 (Characterization of Pb(Zr0.2Ti0.8)O3 Thin Films Deposited at Various Temperatures on SrRuO3/SrTiO3 Substrates by Pulsed Laser Deposition)

  • 이우성;정관호;김도훈;김시원;김형준;박종령;송영필;윤희근;이세민;최인혁;윤순길
    • 한국전기전자재료학회논문지
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    • 제18권9호
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    • pp.810-814
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    • 2005
  • [ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

RF 스퍼터링에 의해 MgO/Si 기판위에 증착된 Pb(Zr, Ti)$\textrm{O}_3$ 강유전체 박막의 특성연구 (Properties of Pb(Zr, Ti)$\textrm{O}_3$ Ferroelectric Thin Films on MgO/Si Substrate by RF Sputtering)

  • 장호정;서광종;장지근
    • 한국재료학회지
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    • 제8권12호
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    • pp.1170-1175
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    • 1998
  • 하부전극 없이 MgO 중간층을 갖는 고농도로 도핑된 Si(100) 기판(MgO/Si)위에 고주파 마그네트론 스퍼터링 방법으로 as-deposited PZT 박막을 증착한후 $650^{\circ}C$ 온도에서 RTA 후속열처리를 실시하였다. 제작된 PZT 박막시료에 대해 MgO 중간층의 두께 및 후속열처리에 따른 결정학적, 전기적특성을 조사하였다. XRD 분석결과 MgO층이 전혀 증착되지 않은 bare Si 기판위에 증착된 PZT 시료는 pyrochlore 결정상만이 나타났으나 50 두께의 M gO층 위에 증착된 PZT/MgO/Si 박막시료는 전형적인 perovskite 결정구조를 나타내었다. SEM 및 AES 분석결과 PZT 박막두게는 약 7000 이었으며 비교적 매끄러운 계면형상을 보여 주었다. PZT 박막내의 각 성분원소가 깊이에 따라 비교적 균일한 분포를 나타내었다. $650^{\circ}C$의 온도로 후속열처리된 PZT/MgO/Si 박막의 1KHz 주파수에서 유전상수 ($\varepsilon_{r}$ )와 잔류분극 (2Pr)은 약 300 및 $14\mu$C/$\textrm{cm}^2$의 값을 각각 나타내었으며 누설전류의 크기는 약 $3.2\mu$A/$\textrm{cm}^2$이었다.

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