• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.192.2-192
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.170.2-170
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.90.2-90
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• 2003

• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.50-50
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• 1999

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.45-51
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• 2005

We have developed surface micromachined Infrared ray (IR) focal plane array (FPA), in which single $SiO_{2}$ layer works as an IR absorbing plate and $Pb(Zr_{0.3}Ti_{0.7})O_{2}$ thin film served as a thermally sensitive material. There are some advantages of applying $SiO_{2}$ layer as an IR absorbing layer. First of all, the $SiO_{2}$ has good IR absorbance within $8{\sim}12{\mu}m$ spectrum range. Measured value showed about 60% absorbance of incident IR spectrum in the range. $SiO_{2}$ layer has another important merit when applied to the top of Pt/PZT/Pt stack because it works also as a supporting membrane. Consequently, the IR absorbing layer forms one body with membrane structure, which simplifies the whole MEMS process and gives robustness Ito the structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.1-6
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• 2000

Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1054-1059
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• 2002

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement and standardization of both the longitudinal and the transverse piezoelectric d-coefficients, d33 and d31, of ferroelectric thin films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been introduced to acquire the piezoelectric coefficients. These results have been calibrated for both the longitudinal and 4he transverse piezoelectric d-coefficients, d33 and 431, of thin films by comparison with the virtual standard created from FEM. In this experiments, we have obtained d33 of 331pC/N and 031 of -92.2pC/N for the PZT thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.364-368
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• 1997

We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.