• Title/Summary/Keyword: PZT Thin Film

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Crystallization and In-plane Alignment Behavior of Pb(Zr, Ti)$O_3$ Films

  • Hwang, Kyu-Seog;Kim, Byung-Hoon
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.191-194
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    • 1997
  • Epitaxial Pb(Zr, Ti)O3(PZT) thin films were prepared on MgO(100) substrates by dipping-pyrolysis (DP) process using metal naphthenates as starting materials, and effects of pyrolysis and final heat-treatment conditions on the film's orientation were investigated. Solid-state epitaxial growth of PZT proceeds at lower temperature around 650℃ from the precursor pyrolyzed at 350 and 500℃. The in-plane alignment of the PZT films depends not only on the final heat-treatment temperature but on the pyrolysis conditions; the films, pyrolyzed at a higher temperature for a short time, i.e., at 500℃ for 10 min, exhibited stronger orientation after the same final heat treatment at 650°∼750℃. The PZT films with the strongest orientation were prepared by pyrolysis under the above conditions followed by final heat treatment at 750℃.

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PROPOSE NEW MIXTURE TARGET FOR LOW-TEMPERATURE AND HIGH- RATE DEPOSITION OF PZT THIN FILMS BY REACTIVE SPUTTERING

  • Hata, Tomonobu;Zhang, WeiXiao;Sasaki, Kimihiro
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.330-337
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    • 1996
  • A rf reactive sputter deposition technique was adopted to deposit ferroelectric lead zirconate titanate (PZT) thin films with high rate from a ZrTi alloy target combined with PbO pellets. Deposition characterisitics including the effects of PbO are ratio were discussed. A new deposition mode called the quasi-metallic mode was observed. Perovskite PZT films were prepared at a growth temperature as low as$ 450^{\circ}C$. However, because the target structure is unstable, weproposed a mixture target consisted of Zr, Ti and PbO. Fundamental experiments were investigated using the powder target. Perovskite PZT film could be obtained at $450^{\circ}C$ with better electrical properties also.

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Dielectric Properties of the PZT Thin Film Capacitors for DRAM Application (DRAM용 PZT 박막 캐패시터의 유전특성)

  • Chung, Jang-Ho;Park, In-Gil;Lee, Sung-Gap;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.335-337
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    • 1995
  • In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

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Seeding Effects on Phase Transformation in Diol-Based Sol-Gel Derived PZT Film (졸-겔 공정에 의해 Diol을 기반으로 제조된 PZT막 상전이에 대한 종자 영향)

  • An, Byung-Hun;Whang, Chin-Myung
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1181-1187
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    • 1999
  • PZT(53/47) precursor 1M sols were prepared using a diol based Sol-Gel process, and thin films were deposited by spin coating onto Pt/Ti/$SiO_2$/Si substrates. With a single coating, final film thickness of aproximately 0.9${\mu}m $ was achieved from diol-based PZT sol. Since PZT crystallized in a ferroelectric perovskite phase from an intermediate nonferroelectric pyrochlore phase, the effects of the presence of perovskite PZT seeds on the phase transformation of PZT were investigated. Seeded PZT films were prepared from the seeded PZT 1M sols in which seeds with less than 0.2${\mu}m $ in size and 1wt% were dispersed in n-propanol before mixing with the PZT stock solution. The seeding effects were confirmed by the fact that the formation temperature of perovskite phase decreased by 50$^{\circ}C$ with less than 1wt% seeds.

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The Characteristics of $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ Piezoelectric Thin Film Made by Sol-Gel Method (Sol-Gel 법으로 제작한 $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ 압전박막의 특성)

  • Yoon, Wha-Joong;Lim, Moo-Yeol;Koo, Kyung-Wan
    • Journal of Sensor Science and Technology
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    • v.4 no.4
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    • pp.75-80
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    • 1995
  • In order to fabricate the piezoelectric thin film of the PZT-PNN ternary compound, the metal alkoxides were used as starting materials. The electrical and crystalline properties of the thin film were evaluated. The X- RD study shows that the crystallization of the film is optimized at $550^{\circ}C$ of sintering temperature. According to the D-E hysterisis curve, the coercive field is 28.8 kV /cm, and the remanent polariztion is $18.3\;{\mu}C/cm^{2}$. The break down voltages of the thin films are $76.0\;{\sim}\;27.0\;MV/m$. When the sintering temperature is raised, the break down voltage is lowered. As a result of measuring the C-V characteristic curve of the ternary compound piezoelectric thin film, the relative dielectric constants are 406 for the composition (50:40:10), 1084 for the composition (50:30:20), 723 for the composition (45:35:20) and 316 for the composition (40:40:20).

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Effect of Pb Content on the Phase Transformation of Sputter-Deposited PZT Thin Film During RTA (PZT 박막의 급속열처리시 Pb 함량이 상변태에 미치는 영향)

  • 주재현;길덕신;주승기
    • Journal of the Korean Ceramic Society
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    • v.30 no.10
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    • pp.803-810
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    • 1993
  • PbxZr0.4Ti0.6O3 thin films were prepared by reactive co-sputtering and annealed by RTA(Rapid Thermal Annealing) process. Effect of Pb content in PbxZr0.4Ti0.6O3 films on the phase transformation was intensively studied. It has been found out that depending on the Pb content as well as RTA temperature, crystal structure of PbxZr0.4Ti0.6O3 films change greatly. It turned out that transformation temperature for perovskite can be lowered and the width of transition temperature region was reduced by increasing Pb content in the film. And the lattice was expanded with increasing Pb content. With increasing RTA temperature, as-deposited phase was transformed into perovskite through three different transformation paths depending on Pb content. It was confirmed that activation energies for nucleation of perovskite structure are much larger than those of its growth.

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Solvent Washing Dry Method for Aqueous Tape Casting

  • Yoon, Seok-Jin;Shin, Hyo-Soon;Park, Ji-Won;Kang, Chong-Yun;Kim, Tae-Song;Kim, Hyun-Jai
    • The Korean Journal of Ceramics
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    • v.7 no.2
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    • pp.55-57
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    • 2001
  • For the fast dry of the aqueous tape, the process which water was replaced by organic solvent was proposed. Socalled, it was the solvent washing dry. Three organic solvents (methanol, ethanol and acetone) were selected for the washing solvent. The weight loss of the washed tapes was measured to evaluate the dry rate of the tapes and dried tapes were examined the generation of the cracks with the variations of the organic solvent and the washing time. Methanol, ethanol and acetone were available organic solvents for this method. The tapes washed in methanol, ethanol and acetone were dried rapidly for twenty minutes. After thirty minutes, the weight losses were not found any more. The solvent of the lower surface tension can decreases the crack of dried tape. If solvent substitutes water completely, though it was fast dried, crack can be eliminated.

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Hysteresis Compensating of PZT Actuator in Micro Tensile Tester Using Inverse Compensation Method

  • Lee, Hye-Jin;Kim, Seung-Soo;Lee, Nak-Kyu;Lee, Hyoung-Wook;Hwang, Jai-Hyuk;Han, Chang-Soo
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.502-505
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    • 2005
  • Researches about micro technology travel lively in these days. Such many researches are concentrated in the field of materials and a process field. But properties of micro materials should be known to give results of research developed into still more. In these various material properties, mechanical property such as tensile strength, elastic modulus, etc is the basic property. To measure mechanical properties in micro or nano scale, actuating must be very precise. PZT is a famous actuator which becomes a lot of use to measure very precise mechanical properties in micro research field. But PZT has a nonlinearity which is called as hysteresis. Not precision result is caused because of this hysteresis property in PZT actuator. Therefore feedback control method is used in many researches to prevent this hysteresis of PZT actuator. Feedback control method produce a good result in processing view, but cause a loss in a resolution view. In this paper, hysteresis is compensated by open loop control method. Hysteresis property is modeled in Mathematical function and compensated control input is constructed using inverse function of original data. Reliability of this control method can be confirmed by testing nickel thin film that is used in MEMS material broadly.

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