• Title/Summary/Keyword: PZT 박막

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졸-겔법으로 형성한 강유전체 PZT박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용 (The rapid thermal annealing effects and its application to electron devices of Sol-Gel derived ferroelectric PZT thin films)

  • 김광호
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.152-156
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    • 1994

  • The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

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소성 조건과 Zr/Ti 몰비에 따른 졸겔 $Pb(Zr_{1-x}Ti_x)O_3$ 박막의 구조 및 강유전 특성 (Structural and ferroelectric characteristics of sol-gel $Pb(Zr_{1-x}Ti_x)O_3$ thin films according to the sintering conditions and Zr/Ti mol%)

  • 김준한;윤현상;박정흠;장낙원;박창엽
    • E2M - 전기 전자와 첨단 소재
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    • 제9권8호
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    • pp.836-850
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    • 1996

  • In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

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Sol-Gel법으로 제작한 PZT(10/90)/PZT(90/10)이종층 박막의 구조 및 유전특성 (Structural and Dielectric Properties of PZT(10/90)/PZT(90/10) Heterolayered Thin Films Prepared by Sol-Gel Method)

  • 김경태;정장호;박인길;이성갑;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.247-250
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    • 1998

  • Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

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