• 한국세라믹학회지
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• 제24권4호
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• pp.397-403
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• 1987

Pb(Zr0.52Ti0.48)O3 powders were prepared by hydrothermal synthesis. Using soluble salts such as Pb(NO3)2, TiCl4 and ZrOCl2$.$8H2O and oxide such as PbO and TiO2 as starting materials, PZT powder was hydrothermally synthesized at the temperature range between 150$^{\circ}C$ and 200$^{\circ}C$. The result showed that reactivity by alkali was decreased in the sequence of Pb(NO3)2, TiCl4, ZrOCl2, PbO, TiO2 and ZrO2. Using the first three soluble salts, PZT powder was synthesiged at 150$^{\circ}C$ for 1hr. In PbO-TiCl4-ZrOCl2 system, PZT powder was synthesized at 150$^{\circ}C$ for 8rs. In Pb(NO3)2-TiO2-ZrOCl2 system, PZT powder was synthesized at 150$^{\circ}C$ for 16hrs, in PbO-TiO2-ZrOCl2 system, the powder was synthesized at 200$^{\circ}C$ for 8hrs.

• 한국세라믹학회지
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• 제36권10호
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• pp.1108-1114
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• 1999

Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

• 한국세라믹학회지
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• 제28권12호
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• pp.953-960
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• 1991

Effect of MgO doping was studied by measuring complex impedance of PZT[Pb(Zr0.52Ti0.48)O3] samples doped with 0.25~6 mol% MgO. Electrical conductivity of PZT samples increased within 1.5 mol% of MgO doping. However above 1.5 mol%, no noticeable changes were found. Activation energy and pre-exponential factor of electrical conductivity were found to decrease within 1.5 mol% of MgO doping, but increase above 1.5 mol%. Therefore it was concluded that the decrease of electrical conductivity with MgO doping was due to the decrease of activation energy.

• 한국세라믹학회지
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• 제37권1호
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.607-610
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• 2004

The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• 한국진공학회지
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• 제19권1호
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• pp.52-57
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• 2010

$BiFeO_3(BFO)/Pb(Zr_{0.52}Ti_{0.48})O_3$(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/$SiO_2$/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트 (perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 kV/cm에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 $44.3{\mu}C/cm^2$이었으며, 항전계($2E_c$) 값은 681.4 kV/cm였다.

• Bulletin of the Korean Chemical Society
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• 제19권8호
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 대한전기학회논문지
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• 제44권7호
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.