통합 검색 | Korea Science

고종수
- 대한기계학회논문집A
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- 제28권11호
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- pp.1727-1732
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- 2004
A nickel layer was deposited onto the PZT thin films, serving both as a selective radiation absorption layer and as a top electrode. The absorption properties of such nickel coated multi-layered infrared detectors were studied in the visible and infrared wavelength ranges. The optimal thickness of the nickel layer on our substrate was 10nm. The maximum absorption coefficient of the deposited 10nm thick nickel layer was 0.7 at a 632nm wavelength. However, a striking asymmetric polarization hysteresis loop was observed in these PZT thin films with nickel as the top electrode. This asymmetric polarization was attributed to the difference between the dynamic pyroelectric responses in these Ni/PZT/Pt films poled either positively or negatively before the measurement. A positively poled film showed a 40% higher voltage response than a negatively poled detector.
https://doi.org/10.3795/KSME-A.2004.28.11.1727 인용 PDF KSCI

백동수;최형욱;김준한;신현용;김규수;박창엽
- E2M - 전기 전자와 첨단 소재
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- 제7권5호
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- pp.369-375
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- 1994
In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.
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마재평;백수현;황유상
- 전자공학회논문지A
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- 제32A권12호
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- pp.101-107
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- 1995
To improve the leakage current, we developed two step sputtering method where PZT thin film in first deposited at room temperature followed by 600.deg. C deposition. The method used an amorphous PZT layer deposited at room temperature to keep a stable interface during sputtering at high temperature. PZT thin films were deposited on Pt/Ti/SiO$_{2}$/Si substrate at room temperature and 600.deg. C sequentially. The effect of the layer deposited at room temperature was investigated with regard to I-V characteristics and P-E hysteresis loop. In the case of the sample with the layer deposited at room temperature, both leakage current and dielectric constant were decreased. The thicker the layer deposited at room temperature was, the lower dielectric constant was. However, leakage current was indepenent of the variation of the thickness ratio. The sample with 200$\AA$ of the layer deposited at room temperature showed the most promising results in both dielectric constant and leakage current.
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