• Electrical & Electronic Materials
• /
• v.10 no.2
• /
• pp.134-140
• /
• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2005.09a
• /
• pp.68-72
• /
• 2005

본 논문에서는 $Bi_{3}Ti_{4}O_{12}$에 Nd를 치환했을 때 향상되는 강유전체 특성을 sol-gel 방법을 이용하여 분석하였다. 이를 위해 $10\;wt\%$의 $12\%$과량의 Bi가 첨가된 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$ sol-gel 용액을 제작하였다. BNT 박막은 $Pt/TiO_2/SiO_2/Si$ 기판 위에 스핀 코팅 방법을 이용하여 증착하였으며, 최종 증착된 박막의 조성은 Rutherford backscattering spectroscopy 분석을 이용하여 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$임을 확인하였다. 200 nm 두께의 BNT 박막은 XRD 분석을 통해 (117)방향에서 강한 피크가 나오며, (001) 방향에서 Nd 치환에 따른 효과로 억제된 피크가 나오는 것을 확인하였다. Pt/BNT/Pt 구조를 이용하여 잔류분극을 측정한 결과 7 V에서 $48\;{\mu}\;C/cm^2$ 이 나왔다. 이것은 다른 강유전체 물질인 PZT, SBT, BLT보다 월등히 큰 값이다.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.2006-2007
• /
• 2002

MEMS 공정을 이용하여 $SiN_x$를 지지층으로 한 $SiO_2$/Ta/PZT/Pt 의 박막 구조를 가지는 마이크로 켄틸레버를 제작하였다. 켄틸레버의 전기기계적 특성을 LDV (레이저 미소 변위 측정기)를 이용하여 측정하였으며, 이를 통해 전기기계적 거동을 분석하였다. 또한 무게 감지소자로서의 응용을 위해 Au의 증착을 통한 감도를 측정하였으며, streptavidin의 무게를 감지하기 위해 immobilization 공정을 거쳐 thiol 그룹 및 biotin을 표면에 고정화 시킨후 biotin-streptavidin 결합에 의한 전기기계적 신호 분석을 통해 생체 물질의 무게 감지 소자로의 응용을 평가하였다.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.32 no.3
• /
• pp.231-234
• /
• 2008

For the applications which need a micro-power supply such as thin and flat displays, micro-robot, and micro-system, it is especially necessary to integrate the passive components because they typically need more than 2/3 of the space of the conventional circuit. Therefore, we have designed and fabricated a novel piezoelectric micro transformer using the PZT thin film and MEMS technologies for application to the energy supply device of the micro-systems. The dimensions of the micro-transformer is $1000{\mu}m\;{\times}\;400{\mu}m\;{\times}\;4.8{\mu}m$ $(length{\times}width{\times}thickness)$. The dynamic displacement of around $9.2{\pm}0.064{\mu}m$ was observed at 10 V. The dynamic displacement varied almost linearly with applied voltage. The average voltage gain (step-up ratio) was approximately 2.13 at the resonant frequency $(F_r=8.006KHz)$ and load resistance $(R_L)$ of 1 $M{\Omega}$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.3
• /
• pp.570-576
• /
• 2007

In this study, the characteristics of metal-ferroelectric-semiconductor FET (MFSFET) device is investigated using field-dependent polarization and square-law FET models. From drain current with the gate voltage variation, when coercive voltages of ferroelectric thin film are 0.5 and 1V, the memory windows are 1 and 2V, respectively. When the gate voltages are 0, 0.1, 0.2 and 0.3V, the difference of saturation drain currents of the MFSFET device at two threshold voltages in ID-VD curve are 1.5, 2.7, 4.0, and 5.7mA, respectively. As a result of the analysis for drain currents after tine lapse, which is based on the simulation for hysteresis loop and the fitting of retention properties of ferroelectric thin films such as PLZT(10/30/70), PLT(10) and PZT(30/70) thin film shows excellent reliability that the decrease of saturation current is about 18% after 10 years.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.6
• /
• pp.436-441
• /
• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Journal of the Korean Ceramic Society
• /
• v.30 no.10
• /
• pp.803-810
• /
• 1993

PbxZr0.4Ti0.6O3 thin films were prepared by reactive co-sputtering and annealed by RTA(Rapid Thermal Annealing) process. Effect of Pb content in PbxZr0.4Ti0.6O3 films on the phase transformation was intensively studied. It has been found out that depending on the Pb content as well as RTA temperature, crystal structure of PbxZr0.4Ti0.6O3 films change greatly. It turned out that transformation temperature for perovskite can be lowered and the width of transition temperature region was reduced by increasing Pb content in the film. And the lattice was expanded with increasing Pb content. With increasing RTA temperature, as-deposited phase was transformed into perovskite through three different transformation paths depending on Pb content. It was confirmed that activation energies for nucleation of perovskite structure are much larger than those of its growth.

• Journal of the Korean Ceramic Society
• /
• v.36 no.10
• /
• pp.1035-1039
• /
• 1999

Ferroelectric properties and reliability characteristics of(111) and (100) preferentially oriented tetragonal Pb(Zr0.2Ti0.8)O3 (PZT) thin film capacitors have been investigated as a function of the top electrode thickness. The (111) preferentially oriented film exhibits 180$^{\circ}$domain switching process with better squareness of hysterisis loop and abrupt change of small singal capacitance-voltage comparing to the (100) preferentially oriented film having 90$^{\circ}$ domain switching process. The domain swithcing process of tetragonal phase PZT is different from that of rhobohedral phase. The film with thinner top electrode shows less initial switching polarization due to less compressive stress but it exhibits better endurance characteristics due to enhancing partial switching region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.748-752
• /
• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.2
• /
• pp.31-37
• /
• 2003

This paper presents a measurement system of mechanical property using dual servo system. There are many kinds of method to measure material properties such as tensile test, indention and bending test. It is highly required to measure the properties of nano-sized material and structure. However, It is need more accurate measurement system, more stable and frequency response than conventional test. In this paper, we designed the dual servo system for a measuring instrument The dual servo system consisting of a coarse stage and a fine motion stage with VCM and PZT is proposed. Mechanical mechanism is designed with the leaf spring type of flexure hinge joint. Lead compensator is applied to this control system, and is designed by PQ method.