• 제목/요약/키워드: PZT(Pb[Zr,Ti]$O_3)$

검색결과 453건 처리시간 0.028초

$SiN_x/Si$ 기판에 제조된 후막 PZT의 횡 압전 계수 $(e_{31,f})$ 측정 (Measurement of Effective Transverse Piezoelectric Coefficients $(e_{31,f})$ of Fabricated Thick PZT Films on $SiN_x/Si$ Substrates)

  • 전창성;박준식;이상렬;강성군;이낙규;나경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.965-968
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    • 2004
  • Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

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BaCO3첨가량에 따른 PAN-PZI계 세라믹스의 압전 및 유전특성 (Piezoelectric and Dielectric Characteristics of PAN-PZT Ceramics with BaCO3Addition)

  • 박타리;이동균;최지원;강종윤;김현재;윤석진;고태국
    • 한국전기전자재료학회논문지
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    • 제15권4호
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    • pp.356-360
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    • 2002
  • The piezoelectric properties of $0.05Pb(Al_{0.5}Nb_{0.5})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3+0.7wt%Nb_2O_5+o.5wt%MnO_2$ ceramics with the additive of BaCO$_3$were investigated. As the addition of BaCO$_3$increased from 0 to 0.4 wt%, the dielectric constant ($\epsilon^T _{33}$), piezoelectric constant ($d_33$), electromechanical coupling factor ($k_p$), and mechanical quality factor ($Q_m$) increased, while the dielectric loss ($tan\delta$) decreased. The highest piezoelectric and dielectric properties were observed at $1200^{\circ}C$ of the sintered temperature with 0.4 wt% of $BaCO_3$, and the properties of $d_33$, $k_p$, and $Q_m$ were 339 pC/N, 60% and 1754, respectively.

멤브레인 구조를 위한 DLC 박막의 특성에 관한 연구 (A study of properties of DLC films for membrane structure)

  • 이태용;김응권;박용섭;홍병유;송준태;박영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.748-752
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    • 2004
  • The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

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PZT 세라믹스의 강도에 미치는 내부응력의 영향 (Effect of internal Stress on the Strength of PZT Cermics)

  • 태원필;윤여범;김송희
    • 한국세라믹학회지
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    • 제33권1호
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    • pp.49-55
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    • 1996
  • The aim of this study is to investigate the change of bending strength and fatigue strength in the unpoled and poled Pb(Zr, Ti)O3 ferroelectrics of tetragonal morphotropic phase boundary (MPM) and rhombohedral com-position in terms of internal stress which is measured by XRD method. Before poling treatment the highest bending strength was found in rhombohedral composition. After poling treatment the bending strength decreas-ed in all compositions but it decreased most remarkably in tetragonal composition. The most prominent de-crease of bending strength after poling treatment in tetragonal was attributed to the occurrence of microcracks due to highanisotropic internal stress around grain boundary which was induced of bending strength after poling in MPB and rhombohedral composition was not due to the occurrence of microcracks but to the increase in tensile internal stress perpendicular to the direction of crack propagation by domain alignment. Fatigue strength was higher before poling treatment than after poling treatment for various compositions.

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PZT의 파괴거동 및 압전 열화특성 (Fracture Behavior and Degradation of Piezoelectric Properties in PZT)

  • 태원필;김송희;조상희
    • 한국세라믹학회지
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    • 제29권10호
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    • pp.806-814
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    • 1992
  • The aim of this study was to investigate the change in compressive strength, freacture behavior and degradation of piezoelectric properties with compressive cyclic loading in Pb(Zr, Ti)O3 of tetragonal, morphotropic phase boundary and rhombohedral composition. The highest compressive strength was found in rhombohedral composition. After poling treatment the strength increased by 8.4% and 6.5% in tetragonal and morphotropic phase boundary compositions respectively while changed little in rhombohedral. The increase of compressive strength after poling treatment is believed to be due to the internal stress around grain boundary by domain alginment toward electric field direction in the microstructures having tetragonality and the occurrence of domain switching to the direction perpendicular to electrical field during fracture. Fracture mode relatively change from transgranular to intergranular was observed in the large grain sized tetragonal and morphotropic phase boundary compositions before and after poling but the transgranular fracture mode always remained in the rhombohedral composition. From the X-ray diffractometer analysis the domains parallel to the electric field direction is known to undergo rearrangement during the cyclic loading into random direction that is responsible for the degradation of piezoelectric property.

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센서용 piezoelectric film의 형성 및 특성 평가에 대한 연구 (Studies on Formation of Piezoelectric Film for Sensor and its Characteristic Estimation)

  • 이성준;김철주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 G
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    • pp.2509-2511
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    • 1998
  • In this study, we formed the piezoelectric film and estimated its characteristics for sensor application. The $Pb(Zr,Ti)O_3(PZT)$ was chosen as piezoelectric material and we used Sol-Gel method to form film. To increase film thickness, the multiple coatings were performed, and the good characteristics obtained in thick film compared to thin film. Because PZT film showed fine etching property as well as other good characteristics, it was thought that it was appropriate material for sensor fabrication.

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Characterization of Elastic, Dielectric and Piezoelectric Properties of piezoelectric Materials

  • Cao, Wenwu
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.13-22
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    • 1999
  • Both the resonance and ultrasonic techniques are standard methods far characterizing the physical properties of piezoelectric materials. However, we found that each technique can only offer a few reliable measurements while the rest often have errors or impossible to implement because of the sample requirements. This paper show that one can use the combination of both techniques to achieve much better accuracy and be able to get the complete set of elastic, dielectric and piezoelectric coefficients using fewer samples. Using an ultrasonic spectroscopy we have also measure the dispersion of the ultrasonic velocity and the attenuation up to 65 MHz. Pb(Zr,Ti)O$_3$[PZT] ceramics were used as examples fur both studies.

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압전 스피커 응용을 위한 PSN-PZT계 세라믹스의 미세구조 분석 및 전기적 특성 평가 (Microstructures and Electrical Properties of PSN-PZT Ceramics for Piezoelectric Speaker)

  • 김성진;권순용
    • 한국전기전자재료학회논문지
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    • 제32권2호
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    • pp.110-115
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    • 2019
  • $Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

Processing, structure, and properties of lead-free piezoelectric NBT-BT

  • Mhin, Sungwook;Lee, Jung-Il;Ryu, Jeong Ho
    • 한국결정성장학회지
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    • 제25권4호
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    • pp.160-165
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    • 2015
  • Lead-free piezoelectric materials have been actively studied to substitute for conventional PZT based solid solution, $Pb(Zr_xTi_{1-x}O_3)$, which occurs unavoidable PbO during the sintering process. Among them, Bismuth Sodium Titanate, $Na_{0.5}Bi_{0.5}TiO_3$ (abbreviated as NBT) based solid solution is attracted for the one of excellent candidates which shows the strong ferroelectricity, Curie temperature (Tc), remnant polarization (Pr) and coercive field (Ec). Especially, the solid solution of rhombohedral phase NBT with tetragonal perovskite phase has a rhombohedral - tetragonal morphotropic phase boundary. Modified NBT with tetragonal perovskite at the region of MPB can be applied for high frequency ultrasonic application because of not only its low permittivity, high electrocoupling factor and high mechanical strength, but also effective piezoelectric activity by poling. In this study, solid state ceramic processing of NBT and modified NBT, $(Na_{0.5}Bi_{0.5})_{0.93}Ba_{0.7}TiO_3$ (abbreviated as NBT-7BT), at the region of MPB using 7 % $BaTiO_3$ as a tetragonal perovskite was introduced and the structure between NBT and NBT-7BT were analyzed using rietveld refinement. Also, the ferroelectric and piezoelectric properties of NBT-7BT such as permittivity, piezoelectric constant, polarization hysteresis and strain hysteresis loop were compared with those of pure NBT.

첨가제에 의한 0.05PAN-0.95PZT계 세라믹의 유전 특성에 관한 연구 (A study on the dielectric characteristics of 0.05PAN-0.85PZT ceramics with additive)

  • 김현철;신혜경;김진섭;윤현상;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1661-1663
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    • 2000
  • This study was to measure the dielectric characteristics of 0.05Pb($Al_{0.5}Nb_{0.5}$)-0.95Pb($Zr_{0.52}Ti_{0.48})O_3$[PAN-PZT] system ceramics according to the variation of $Cr_{2}O_3$, $Fe_{2}O_3$ addition amount. 0.0$\sim$1.2[wt%] and according to sintering temperature after creating the specimens with a general sintering way. The results of this study were summarized as follows : the dielectric constant at 20[$^{\circ}C$] reduced dy increasing additive on the whole. The dielectric loss was minimum value of 12.77[%], sintered at 1200[$^{\circ}C$], dopped with $Cr_{2}O_3$ 0.3[wt%] and minimum value of 10.89[%], sintered at 1200[$^{\circ}C$], dopped with $Fe_{2}O_3$ 0.6[wt%]. The variation rate of dielectric constant according to the change of frequency was decreased slowly by increasing frequency. The temperature coefficient of capacitance turned out increasing the stability of the temperature, decreased $Cr_{2}O_3$ 0.3wt% showed its minimum value 0.59[%/$^{\circ}C$], the maximum value 0.9[%/$^{\circ}C$] with $Cr_{2}O_3$ 3wt%.

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