• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.496-500
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• 2017

$Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ composition ceramics with high piezoelectric properties were fabricated by the columbite precursor method for ultrasonic generators, and the effects of sintering temperature on microstructure and piezoelectric properties were systematically investigated. It was found that the tetragonality of the ceramics decreased with increase in sintering temperature. Moreover, excellent physical properties such as $d_{33}=447pC/N$, ${\varepsilon}_r=1,843$, $k_p=0.641$, and $Q_m=1,207$ were obtained for an ultrasonic generator when the second calcination temperature and sintering temperature were $720^{\circ}C$ and $920^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.158-158
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• 2009

기계적 에너지를 전기적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액추에이터, 변압기, 초음파모터 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근에는 이러한 압전 소자를 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics 등의 분야에 적용하기 위하여 소형화 및 경량화를 구현하고자 다양한 연구가 진행되고 있다. 본 연구에서는 압전 특성이 우수한 PNN-PMN-PZT 삼원계 세라믹을 이용하여 압전 트랜스포머를 제작하고 전기적 특성을 평가하였다. 압전트랜스포머는 전왜-압전효과를 이용한 소전력용 고전압발생소자로서 종래의 권선형 트랜스포머에 비교해서 소형, 경량이면서 승압비가 높고 구조가 간단하므로 직류 고전압전원에 응용되고 있다. 압전트랜스의 이론적인 고찰은 Rosen 이후로 많은 연구자들에 의해서 보고되었다. 그런데 압전세라믹트랜스는 공진 시 강력한 에너지변환을 하기 때문에 재료의 물리적 특성이 매우 중요함에도 불구하고, 이러한 물리적 특성에 관한 연구는 거의 없었다. 따라서 본 연구에서는 물리적 특성과 전기적 특성의 상호 연관성을 고찰하고자 하였다. 압전트랜스용 재료는 전기기계결합계수($k_p$)와 기계적품질계수(Qm)가 높아야 한다. 전기기계결합계수를 높이기 위해서는 상경계 조성의 Pb(Zr,Ti)$O_3$[PZT]계 세라믹스가 가장 우수하다. 본 연구에서는 기계적 품질계수를 향상시키기 위해서 $Pb(Nn_{1/3}Nb_{2/3})_{0.06+x}(Mn_{1/3}Nb_{2/3})_{0.065-x}(Zr_{0.48}Ti_{0.52})_{0.875}0_3$계의 조성을 설계하여 압전특성을 평가하고 미세구조를 분석하였다. 또한 압전트랜스를 제작하여 입출력의 승압비 및 주파수 특성 등도 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.224-227
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• 1999

Ferroelectric Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$ thin films were fabricated by pulsed laser deposition, mainly varying process conditions such as substrate temperature, oxygen pressure, and laser energy, PZT films annealed at more than 600$^{\circ}C$ were crystallized into pure perovskite phases regardless of deposition temperatures. Lower deposition temperature of 400$^{\circ}C$ accompanied with post-annealing at 650$^{\circ}C$ resulted in denser microstructures with extremely small grains compated to those of thin films annealed at higher deposition temperatures. Hysteresis curves of thin film with small grains exhibitied good squareness and low leakage characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.332-336
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• 2016

In this study, in order to develop the composition ceramics for ultrasonic sensor with high $d_{33}*g_{33}$, $Pb_{1-3x/2}Bix(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.09}(Zr_{0.5}Ti_{0.5})_{0.88}O_3$(PMW-PNN-PZT) system ceramics were prepared using CuO as sintering aids. And then, their microstructure, piezoelectric and dielectric characteristics were systemetically investigated with bismuth substitution. The PMW-PNN-PZT ceramic specimens could be sintered at sintering temperature of $940^{\circ}C$ by adding sintering aids. At x=0.015 specimen, the density, electromechanical coupling factor($k_p$), dielectric constant, piezoelectric constant($d_{33}$) and piezoelectric figure of merit($d_{33}*g_{33}$) indicated the optimal properties of $7.90g/cm^3$, 0.67, 2,511, 628 pC/N, and $17.7pm^2/N$, respectively, for duplex ultrasonic sensor application.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.329-331
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2(hr), respectively. The structural, dielectric and pyroelectric properties with addition of $Y_2O_3$ were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of $Y_2O_3$. Relative dielectric constant and dielectric loss of the specimen doped with 0.2wt% $Y_2O_3$ were 597 and 0.022, respectively. Remanent polarization and coercive field of the specimen doped with 0.4wt% $Y_2O_3$ were $8.5[{\mu}C/cm^2]$ and 10.2[kV/cm], respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1368-1369
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• 2006

In this thesis, the minuteness structure, piezoelectric, and dielectric characteristics of Pb[(Co0.5 W0.5) 0.03 (Ni1/3 Nb2/3) 0.07(Zr0.52 Ti0.48)0.9]O3+0.5Wt% MnO2 ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. The electromechanical coupling coefficient (Kp) showed its maximum of 31.116[%] in the sintered specimens at $1050[^{\circ}C]$, and its minimum of 20.220[%] in the sintered specimens at $1150[^{\circ}C]$. The mechanical quality coefficient (Qm) marked the maximum of 139.526 at the sintering temperature of $1150[^{\circ}C]$.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.65-73
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• 1992

The effect of grain size on the time-dependent piezoelectrice degradation of a poled PZT of MPB composition Pb0.988Sr0.012 (Zr0.52Ti0.48)O3 with 2.4 mol% of Nb2O5 was studied, and the degradation mechanism was discussed. Changes in the internal bias field and the internal stress both responsible for the time-dependent degradation of poled PZT were examined by the polarization reveral technique, XRD and Vickers indentation, respectively. The piezoelectric degradation increased with increasing time and grain size, and the internal bias field due to space charge diffusion decreased with increasing grain size of poled PZT. The internal bias field, however, was almost insensitive to the degradation time regardless of the grain size. On the other hand, both the x-ray diffraction peak intensity ratio of (002) to (200) and the fracture behavior including the crack propagation support that the ferroelectric domain rearrangement of larger grain size showed rapid relaxation of the internal stress compared with smaller one, which is thought the origin of the larger piezoelectric degradation in the former. In conclusion, the contribution of space charge diffusion on the piezoelectric degradation of PZT is strongly dependent on both the grain size and the composition. Thus, the relaxation of internal stress due to the ferroelectric domain rearrangement as well as the amount and time-dependence of the internal bias field due to space charge diffusion should be considered simultaneously in the degradation mechanism of PZT.