• Title/Summary/Keyword: PZT(Pb[Zr,Ti]$O_3)$

Search Result 453, Processing Time 0.029 seconds

Characteristics of Piezoelectric Transformer Using PMS-PZT, PMN-PZT Ceramics (PMS-PZT, PMN-PZT계 세라믹스를 이용한 압전변압기의 특성)

  • 이동균;안형근;한득영;윤석진;김현재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.13 no.3
    • /
    • pp.220-226
    • /
    • 2000
  • The piezoelectric material for piezoelectric transformer needs the high electromechanical coupling factor( $k_{p}$) the piezoelectric constant( $d_{33}$) and the mechanical quality factor( $Q_{m}$)in order to obtain high voltage step-up ratio and low temperature rising. In this study the piezoelectric transformers were fabricated using Pb[$Zr_{0.45}$/ $Ti_{0}$48//L $u_{0.02}$(M $n_{1}$3//S $b_{2}$3/)$_{0.05}$$O_3$(PMS-PZT) and Pb[Z $r_{0.25}$/ $Ti_{0.375}$(M $g_{1}$3//N $b_{2}$3/)$_{0.375}$$O_3$+0.5wt%Mn $O_2$(PMN-PZT) ceramics. The piezoelectric properties of PMS-PZT and PMN-PZT were measured. The voltage set-up ratios of the piezoelectric transformers using PMS-PZT and PMN-PZT were the value of 15, 20 respectively under 100$_{KΩ}$ in Rosen type transformer.r.ormer.r.r.r.r.r.r.

  • PDF

Dielectric and Piezoelectric Properties of BNT-PNN-PZT system Ceramics (BNT-PNN-PZT계 세라믹스의 유전 및 압전특성에 관한 연구)

  • 유주현;홍재일;임인호;정희승;윤현상;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1995.11a
    • /
    • pp.44-47
    • /
    • 1995
  • In this study, dielectric and piezoelectric properties of 0.4[0.1Bi(Ni$\_$1/2/Ti$\_$1/2/)O$_3$0.9Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$]-0.6(PbZr$\_$y/Ti$\_$1-y/)O$_3$ceramics with Zr/Ti ratio were observed. As a results, structure of the ceramics with ZrO$_2$(y) 0.425 and 0.45 was MPB. Electromechanical coupling coefficients k$\_$p/, k$\_$31/ of the BN$\_$162/ specimen were 57.2%, 35.6% and piezoelectric constants d$\_$33/, d$\_$31/ were 720, 298[x10$\_$-12/C/N).

  • PDF

Fabrication of Vesy Thin Pb(Zr, Ti)$\textrm{O}_3$ Dielectric Films of 0.12nm $\textrm{SiO}_2$ Equivalent Thickness by ECR PECVD (ECR 플라즈마 화학기상증착법에 의한 0.12nm $\textrm{SiO}_2$ 환산두계를 갖는 Pb(Zr, Ti)$\textrm{O}_3$유전박막의제조)

  • Kim, Jae-Hwan;Kim, Yong-Il;Wi, Dang-Mun;Lee, Won-Jong
    • Korean Journal of Materials Research
    • /
    • v.7 no.8
    • /
    • pp.635-639
    • /
    • 1997
  • ECR-PECVD법을 사용하여 450-49$0^{\circ}C$이하의 온도에서 Pt/SiO$_{2}$/Si기판 위에 PZT 박막을 증착하였다. 기판 온도가 46$0^{\circ}C$ 이하일 경우에는 페로브스이트 상과 제2상으로 이루어진 박막이 성장하였으며 기판온도가 47$0^{\circ}C$이상일 때에는 페로브스카이트 단일상의 PZT 박막이 성장하였다. 49$0^{\circ}C$에서 매우 얇은 페로브스카이트의 PZT 박막을 증착한 후 $650^{\circ}C$에서 1분간 raped thermal annealing(RTA) 처리한 결과 박막의 조성과 결정성에는 거의 변화가 없었으나 박막의 전하 저장 밀도는 크게 향상되었다. 이는 RTA 처리에 의한 저유전 계면층의 소멸이 주된 이유라고 판단된다. 열처리 후 두께 40-45nm의 PZT박막은 200kV/cm의 전장 하에서 $10^{-6}$$\textrm{cm}^2$이하의 누설전류값을 갖고 있었으며, 인가전압 1V에서 300fF/$\mu$$m^2$의 정전용량, 즉 SiO$_{2}$환산두께 0.12nm를 나타내었다.

  • PDF

Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3 Thin Films Deposited by Radio Frequency Magnetron Sputtering

  • Choi, Woo-Chang
    • Transactions on Electrical and Electronic Materials
    • /
    • v.11 no.4
    • /
    • pp.182-185
    • /
    • 2010
  • $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

Fabrication and Characteristics of FET-type Pressure Sensor Using Piezoelectric PZT Thin Film (압전체 PZT 박막을 이용한 FET형 압력 센서의 제작과 그 특성)

  • Kim, Young-Jin;Lee, Young-Chul;Kwon, Dae-Hyuk;Sohn, Byung-Ki
    • Journal of Sensor Science and Technology
    • /
    • v.10 no.3
    • /
    • pp.173-179
    • /
    • 2001
  • The currently used semiconductor pressure sensors are piezoresistive and capacitive type. Especially, semiconductor micro pressure sensors have a great deal of attention because of their small size. However, its fabrication processes are difficult, so that its yield is poor. For the purpose of resolving the drawbacks of the existing silicon pressure sensors, we demonstrate a new type of pressure sensor using PSFET(pressure sensitive field effect transistor) and investigate its operational characteristics. We used PZT(Pb(Zr,Ti)$O_3$) as a pressure sensing material. PZT thin films were deposited on a gate oxide of MOSFET by an rf-magnetron sputtering method. To abtain the stable phase, perovskite structure, furnace annealing technique have been employed in PbO ambient. The sensitivity of the PSFET was 0.38 mV/mmHg.

  • PDF

Piezoelectric properties and microstructure of 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3thick film with particle size distribution (입자 크기 분포에 따른 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3 후막의 미세구조 및 압전특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Chong-Yun;Yoon, Seok-Jin
    • Journal of Sensor Science and Technology
    • /
    • v.17 no.6
    • /
    • pp.418-424
    • /
    • 2008
  • The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

Polarized Raman Scattering Study of Highly(111)-oriented PZT Films in the Rhombohedral-Phase Field

  • 이현정;박정환;장현명
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2003.03a
    • /
    • pp.174-174
    • /
    • 2003
  • Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

  • PDF

Characterizations of Sputtered PZT Films on Pt/Ti/Si Substrates. (Pt/Ti/Si 기판위에 형성시킨 PZT박막의 특성)

  • Hwang, Yu-Sang;Baek, Su-Hyeon;Baek, Sang-Hun;Park, Chi-Seon;Ma, Jae-Pyeong;Choe, Jin-Seok;Jeong, Jae-Gyeong;Kim, Yeong-Nam;Jo, Hyeon-Chun
    • Korean Journal of Materials Research
    • /
    • v.4 no.2
    • /
    • pp.143-151
    • /
    • 1994
  • On PT/Ti/Si substrates, PZT thln fllms are deposited at $300^{\circ}C$ by rf magnetron sputtering uslng a $(PbZr_{52}, Ti_{48})O_{3}$ composltc cerarnlc target. To abtaln, the stable phase, perovskltc structure, furnace annealmg techmque had been cmplo:~d In PbO amb~ent for the $550^{\circ}C$-$750^{\circ}C$ temperature ranges. On Pt(250$\AA$)/Ti(500$\AA$)/Si, Pt(1000)$\AA$/Ti(500$\AA$)/Si substrates, effects of Ti layer and Pt thickness are studled. Though thickness of the Pt layer 1s 1000$\AA$). oxygen diffusion is not prevented and accelerated by Ti layer actlng for oxygen sink sites durmg furnace annealing. The upper TI layer 1s transformed Into TIOX by oxyen dlffuslon and lower Ti layer Into silicide with in-diffused Pt. The formation of TiOx layer seems to affect the orlentatton of the PZT layer. Furnace annealed f~lm shows ferroelectr~c and electrical properties wth a remanent polarlzation of 3.3$\mu A /\textrm{cm}^2$, , coerclve fleld of 0.15MV/cm, a=571 (10kHz), leakage current 32.65$\mu A /\textrm{cm}^2$, , breakdown voltage of 0.4OMV/cm.

  • PDF

Effects of annealing under oxygen atmosphere of PZT thin films on LTCC substrates (LTCC 기판위에 성장시킨 PZT 박막의 열처리시 $O_2$가 미치는 영향)

  • Lee, Kyung-Chun;Hur, Won-Young;Hwang, Hyun-Suk;Lee, Tae-Yong;Lee, Jong-Duk;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.06a
    • /
    • pp.205-205
    • /
    • 2010
  • Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystem fields because of its very good electrical and mechanical properties, high stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of on $O_2$ annealing treatment on the electrical properties of Pb(ZrTi)$O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. The change of the crystallization of the films were investigated under various atmosphere. The structural variation of the films were analyzed by using X-Ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) and secondary ion mass spectrometry (SIMS).

  • PDF

The Electrical Properties and Residual Stress of Pb(Zr,Ti)O$_3$ Piezoelectric Thin Films fabricated by 2- Step Deposition Method (2단계 증착법으로 제조된 Pb(Zr, Ti)O$_3$압전 박막의 전기적 특성 및 잔류 응력에 관한 연구)

  • Kim, Hyuk-Hwan;Lee, Kang-Woon;Lee, Won-Jong;Nam, Hyo-Jin
    • Korean Journal of Materials Research
    • /
    • v.11 no.9
    • /
    • pp.769-775
    • /
    • 2001
  • High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.

  • PDF