• 제목/요약/키워드: PVD width

검색결과 9건 처리시간 0.022초

PVD에 의한 연약점토지반의 압밀촉진효과에 대한 수치해석 (Numerical Analyses on Consolidation Promotion Effect of Soft Clay Ground by Prefabricated Vertical Drain)

  • 유승경
    • 한국지반신소재학회논문집
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    • 제8권1호
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    • pp.19-24
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    • 2009
  • 본 논문에서는 연약지반개량공법 중의 하나인 PVD공법에 의한 연약지반개량효과를 파악하기 위하여 일련의 수치해석을 실시하였다. 본 연구에서는 기존에 수행된 실내모형실험 결과와의 비교를 통하여 그 신뢰성이 검증된 탄점소성 3차원압밀 유한요소해석 방법을 사용하였다. 수치해석에서는 PVD의 폭과 상재하중의 크기를 다양하게 변화시키며 개량된 점토지반의 압밀거동을 재현하였으며 그 결과를 이용하여 개량된 연약점토지반의 압밀촉진효과에 미치는 PVD의 폭과 상재하중 크기의 영향에 대하여 고찰하였다.

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SM45C재의 PVD코팅과 필름에 의한 트라이볼러지 특성 (Variations in Tribological Characteristics of SM45C by PVD Coating and Thin Films)

  • 심현보;서창민;김종형;서민수
    • 한국해양공학회지
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    • 제32권6호
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    • pp.502-510
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    • 2018
  • In order to accumulate data to lower the friction coefficient of a press mold, tribological tests were performed before and after coating SM45C with a PVC/PO film and plasma coating (CrN, concept). The ultrasonic nanocrystal surface modification (UNSM)-treated material had a nano-size surface texture, high surface hardness, and large and deep compressive residual stress formation. Even when the load was doubled, the small amount of abrasion, small weight of the abrasion, and width and depth of the abrasion did not increase as much as those of untreated materials. A comparison of the weight change before and after the tribological test with the CrN and the concept coating material and that of the untreated material showed that the wear loss of the concept coating material and P-UNSM treated material (that is, the UNSM treated material treated with the concept coating) showed a tendency to decrease by approximately 55-75%. Concept 100N had a lower friction coefficient of about 0.6, and P-UNSM-30-100N showed almost the same curve as concept 100N and had a low coefficient of friction of about 0.6. The concept multilayer coating had a thickness of $5.32{\mu}m$. In the beginning, the coefficient of friction decreased because of the plasma coating, but it started to increase from about 250-300 s. After about 350 s, the coefficient of friction tended to approach the friction coefficient of the SM45C base metal. The SGV-280F film-attached test specimen was slightly pushed back and forth, but the SM45C base material was not exposed due to abrasion. The friction coefficient was 0.22, which was the lowest, and the tribological property was the best in this study.

High Quality Nickel Atomic Layer Deposition for Nanoscale Contact Applications

  • Kim, Woo-Hee;Lee, Han-Bo-Ram;Heo, Kwang;Hong, Seung-Hun;Kim, Hyung-Jun
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.22.2-22.2
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    • 2009
  • Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

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Effect of Substrate Rotation on the Phase Evolution and Microstructure of 8YSZ Coatings Fabricated by EB-PVD

  • Park, Chanyoung;Choi, Seona;Chae, Jungmin;Kim, Seongwon;Kim, Hyungtae;Oh, Yoon-Suk
    • 한국세라믹학회지
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    • 제53권1호
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    • pp.81-86
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    • 2016
  • The effect of substrate rotation speed on the phase forming behavior and microstructural variation of 8 wt% yttria ($Y_2O_3$) stabilized $ZrO_2$ (8YSZ) coatings as a thermal barrier coating has been investigated. 8YSZ coatings with $100{\sim}200{\mu}m$ thickness were deposited by electron beam-physical vapor deposition onto a super alloy (Ni-Cr-Co-Al) substrate with a bond coating (NiCo-CrAlY). The width of the columnar grains of the 8YSZ coatings increased with increasing substrate rotation speed from 1 to 30 rpm at a substrate temperature range of $900{\sim}950^{\circ}C$. In spite of the different growth behaviors of coatings with different substrate rotation speeds, the phases of each coating were not changed remarkably. Even after post heat treatments with various conditions of the coated specimens fabricated at 20 rpm, only a change of color was noticeable, without any remarkable change in the phase or microstructure.

기판온도에 따른 ITO 박막의 제조 및 특성 (Preparation and characterization of ITO Thin Film By Various Substrate heating temperature)

  • 김성진;박헌균
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.94.2-94.2
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    • 2010
  • Indium tin oxide (ITO) Thin films were grown on Non-alkarai glass Substrates by PVD method and Subsequently Subjected to ($100^{\circ}C-350^{\circ}C$) Thermal Annealing (TA) In Nitr Oxygen ambinent. Most of all, The effect of TA treatment on the structural properties were studied by using X-Ray diffraction and atomic force microscopy, while optical properties were studied by UV-Transmittance measurements. After TA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, As a result, XRD peaks increase of the intensity and narrowing of full width at half-maximun (FWHM). In addtion The microstructure, The surface morphology, the optical transmittance changed and improved, and we investigated The effects of temperature, Time and atmosphere during the TA on the structural and electrical properties of the ITO/glass on TA at $300^{\circ}C$. As a results, the films are highly transparent (80%~89%) in visible region. AFM analysis shows that the films are very smooth with root mean square surface roughness 0.58nm -2.75nm thickness film. It is observed that resistivity of the films drcreases T0 $1.05{\times}10^{-4}{\Omega}cmt$ $6.06{\times}10^{-4}{\Omega}cm$, while mobility increases from $152cm^2/vs$ to $275cm^2/vs$.

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TiYN코팅 고속도강 공구의 개발 및 공구수명 평가 (Development and Tool Life Assessment of TiYN Coated High Speed Steel Tools)

  • 이영문;강태봉;최수준;송태성
    • 한국정밀공학회지
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    • 제15권8호
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    • pp.33-38
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    • 1998
  • TiYN coated high speed steel tools have been developed and their tool lifes were assessed. First yttrium alloyed titanium target was manufactured, then using the arc ion plating(AIP) technique TiYN coating was deposited onto high speed steel substrate. Three kinds of varying thickness of TiYN coated tools were prepared. Cutting tests were carried out with theses tools and for comparison with the commercially available uncoated, TiN, TiCN and TiAlN coated tools. During the cutting tests flank wear width vs. cutting time was measured. It has been revealed that the newly developed TiYN coated tools show superior tool life characteristics to others.

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Investigation of TaNx diffusion barrier properties using Plasma-Enhanced ALD for copper interconnection

  • 한동석;문대용;권태석;김웅선;황창묵;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.178-178
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    • 2010
  • With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

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Thrust Performances of a Very Low-Power Micro-Arcjet

  • Hotaka Ashiya;Tsuyoshi Noda;Hideyuki Horisawa;Kim, Itsuro ura
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.611-616
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    • 2004
  • In this study, microfabrication of a micro-arcjet nozzle with Fifth-harmonic generation Nd:YAG pulses (wavelength 213 nm) and its thrust performance tests were conducted. A micro-arcjet nozzle was machined in a 1.2 mm thick quartz plate. Sizes of the nozzle were 0.44 mm in width of the nozzle exit and constrictor diameter of 0.1 mm. For an anode, a thin film of Au (~100 nm thick) was deposited by DC discharge PVD in vacuum on divergent part of the nozzle. As for a cathode, an Au film was also coated on inner wall surface. In operational tests, a stable discharge was observed for mass flow of 1.0mg/sec, discharge current of 6 ㎃, discharge voltage of 600 V, or 3.6 W input power (specific power of 3.6 MW/kg). In this case, plenum pressure of the discharge chamber was 80 ㎪. With 3.6 W input power, thrust obtained was 1.4 mN giving specific impulse of 138 sec with thrust efficiency of 24 %.

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Electrochemical double layer capacitors with PEO and Sri Lankan natural graphite

  • Jayamaha, Bandara;Dissanayake, Malavi A.K.L.;Vignarooban, Kandasamy;Vidanapathirana, Kamal P.;Perera, Kumudu S.
    • Advances in Energy Research
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    • 제5권3호
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    • pp.219-226
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    • 2017
  • Electrochemical double layer capacitors (EDLCs) have received a tremendous interest due to their suitability for diverse applications. They have been fabricated using different carbon based electrodes including activated carbons, single walled/multi walled carbon nano tubes. But, graphite which is one of the natural resources in Sri Lanka has not been given a considerable attention towards using for EDLCs though it is a famous carbon material. On the other hand, EDLCs are well reported with various liquid electrolytes which are associated with numerous drawbacks. Gel polymer electrolytes (GPE) are well known alternative for liquid electrolytes. In this paper, it is reported about an EDLC fabricated with a nano composite polyethylene oxide based GPE and two Sri Lankan graphite based electrodes. The composition of the GPE was [{(10PEO: $NaClO_4$) molar ratio}: 75wt.% PC] : 5 wt.% $TiO_2$. GPE was prepared using the solvent casting method. Two graphite electrodes were prepared by mixing 85% graphite and 15% polyvinylidenefluoride (PVdF) in acetone and casting n fluorine doped tin oxide glass plates. GPE film was sandwiched in between the two graphite electrodes. A non faradaic charge discharge mechanism was observed from the Cyclic Voltammetry study. GPE was stable in the potential windows from (-0.8 V-0.8 V) to (-1.5 V-1.5 V). By increasing the width of the potential window, single electrode specific capacity increased. Impedance plots confirmed the capacitive behavior at low frequency region. Galvanostatic charge discharge test yielded an average discharge capacity of $0.60Fg^{-1}$.