• Journal of the Korean Society of Radiology
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• v.3 no.2
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• pp.27-31
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• 2009

Now a days, the Medical X-ray equipments has become digitalized from analog type such as film, cassette to CR, DR. And many scientists are still researching and developing the Medical X-ray equipment. In this study, we used the Bismuth tri-iodide to conversion material for digital X-ray equipments and we couldn't get the satisfying result than previous study, but it opened new possibility to cover the disadvantage of a-Se is high voltage aplly and difficultness of make. In this paper, we use $BiI_3$ powder(99.99%) as x-ray conversion material and make films that have thickness of 200um and the film size is $3cm{\times}3cm$. Also, we deposited an ITO(Indium Tin Oxide) electrode as top electrode and bottom electrode using a Magnetron Sputtering System. To evaluate a characteristics of the produced films, an electrical and structural properties are performed. Through a SEM analysis, we confirmed a surface and component part. And to analyze the electrical properties, darkcurrent, sensitivity and SNR(Signal to Noise Ratio) are measured. Darkcurrent is $1.6nA/cm^2$ and sensitivity is $0.629nC/cm^2$ and this study shows that the electrical properties of x-ray conversion material that made by screen printing method are similar to PVD method or better than that. This results suggest that $BiI_3$ is suitable for a replacement of a-Se because of the reduced manufacture processing and improved yield.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.160-160
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• 2016

In this study, we applied the low temperature curing Ag paste to replace PVD System. The electrode formation of low temperature curing Ag paste for silicon Hetero-junction solar cells is important for improving device characteristics such as adhesion, contact resistance, fill factor and conversion efficiency. The low temperature curing Ag paste is composed various additives such as solvent, various organic materials, polymer, and binder. it depends on the curing temperature conditions. The adhesion of the low temperature curing Ag paste was decided by scratch test. The specific contact resistance was measured using the transmission line method. All of the Ag electrodes were experimented at various curing temperatures within the temperature range of $160^{\circ}C-240^{\circ}C$, at $20^{\circ}C$ intervals. The curing time was also changed by varying the conditions of 10-50min. In the optimum curing temperature $200^{\circ}C$ and for 20 min, the measured contact resistance is $19.61m{\Omega}cm^2$. Over temperature $240^{\circ}C$, confirmed bad contact characteristic. We obtained photovoltaic parameter of the industrial size such as Fill Factor (FF), current density (Jsc), open-circuit voltage (Voc) and convert efficiency of up to 76.2%, 38.1 mA/cm2, 646 mV and 18.3%, respectively.

• Parasites, Hosts and Diseases
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• v.56 no.1
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• pp.61-70
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• 2018

We developed a Rapid Diagnostic Test (RDT) kit for detecting IgG/IgM antibodies against Zika virus (ZIKV) using monoclonal antibodies to the envelope (E) and non-structural protein 1 (NS1) of ZIKV. These proteins were produced using baculovirus expression vector with Sf9 cells. Monoclonal antibodies J2G7 to NS1 and J5E1 to E protein were selected and conjugated with colloidal gold to produce the Zika IgG/IgM RDT kit (Zika RDT). Comparisons with ELISA, plaque reduction neutralization test (PRNT), and PCR were done to investigate the analytical sensitivity of Zika RDT, which resulted in 100% identical results. Sensitivity and specificity of Zika RDT in a field test was determined using positive and negative samples from Brazil and Korea. The diagnostic accuracy of Zika RDT was fairly high; sensitivity and specificity for IgG was 99.0 and 99.3%, respectively, while for IgM it was 96.7 and 98.7%, respectively. Cross reaction with dengue virus was evaluated using anti-Dengue Mixed Titer Performance Panel (PVD201), in which the Zika RDT showed cross-reactions with DENV in 16.7% and 5.6% in IgG and IgM, respectively. Cross reactions were not observed with West Nile, yellow fever, and hepatitis C virus infected sera. Zika RDT kit is very simple to use, rapid to assay, and very sensitive, and highly specific. Therefore, it would serve as a choice of method for point-of-care diagnosis and large scale surveys of ZIKV infection under clinical or field conditions worldwide in endemic areas.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.09a
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• pp.336-345
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• 2010

GS E&C was awarded the contract for the construction of Hanoi - Hai Phong Expressway Package EX-7 from Station Km 72+000 to Station Km 81+300 in December 2008. This project is the $7^{th}$ contract package of the 105.5 km long expressway near Hai Phong city, which includes a FCM-styled bridge along with high embankments over soft ground. For these high embankments, there is a need to treat the soft soil for improving the overall stability during construction and for reducing the post-construction settlement of the expressway. The Designer of this project had adopted four (4) different types of ground improvement techniques to treat the soft ground, including the prefabricated vertical drains (PVD), sand drains (SD), pack drains (PD, or sometimes called packed sand drains), and sand compaction piles (SCP). The main focus of soft soil treatment should be paid attention to the residual settlement after construction. In current design, however, it appeared that the secondary compression (or creep) of the improved soil layer and the consolidation settlement of the lower untreated compressible soil layer have been neglected in the estimation of the post-construction settlement. These uncalculated residual settlements may not only unsatisfy the design criteria but also raise serious problems during service period of this expressway. In this paper, the subsoil condition and current design were reviewed focusing on the employed soft soil treatment method and expected residual settlement.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.1
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• pp.25-32
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• 2020

Generally, high-temperature, high-pressure, high-priced sintering equipment is used for diamond sintering, and conductivity is a problem for improving the surface modification of the sintered body. In this study, to improve the efficiency of diamond sintering, we identified a new process and material that can be sintered at low temperature, and attempted to develop a composite thin film that can be discharged by doping boron gas to improve the surface modification of the sintered body. Sintered bodies were sintered by mixing Si and two diamonds in different particle sizes based on CIP molding and HIP molding. In CVD deposition, CVD was performed using WC-Co cemented carbide using CH₄ and H₂ gas, and the specimen was made conductive using boron gas. According to the experimental results of the sintered body, as the Si content is increased, the Vickers hardness decreases drastically, and the values of tensile strength, Young's modulus and fracture toughness greatly increase. Conductive CVD deposited diamond was boron deposited and discharged. As the amount of boron added increased, the strength of diamond peaks decreased and crystallinity improved. In addition, considering the release processability, tool life and adhesion of the deposition surface according to the amount of boron added, the appropriate amount of boron can be confirmed. Therefore, by solving the method of low temperature sintering and conductivity problem, the possibility of solving the existing sintering and deposition problem is presented.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.259-263
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• 2002

Three different ribbons of amorphous $Til_{1-x}Be_x$ alloys such as $Ti_{0.59}Be_{0.41},\;Ti_{0.61}Be_{0.39}\;and\;Ti_{0.63}Be_{0.37}$ were made by melt-spinning method to be used as brazing filler metals for joining Zircaloy-4 nuclear fuel cladding tubes, and their crystallization behavior as well as microstructure of the brazed zone were examined. The crystallization behavior was investigated in teams of thermal stability, crystallization temperature and activation energy. The crystallization of the $Ti_{1-x}Be_x$ alloys proceeded in two steps by the formation of ${\alpha}$-Ti at a lower temperature and of TiBe at a higher temperature. The crystallization temperature and activation energy of $Ti_{1-x}Be_x$ alloys were higher and larger than those of $Zr_{1-x}Be_x$ alloys and PVD Be. Those resulted thinner joining layer with $Ti_{1-x}Be_x$ alloys, which kept sound thickness of Zircaloy-4 nuclear fuel cladding tubes after brazing. But in the brazed zones made by $Ti_{1-x}Be_x$ filler metals, a little solid-solution layers composed of Zr and Ti were formed toward the Zr cladding tube and Zr was detected in the brazed zones. Microstructure of brazed zone was changed from globular to dentrite with decreasing Be content in the $Ti_{1-x}Be_x$ filler metal.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.6-6
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• 1994

Har dmaterials such as cemented carbides with or without coated layer, cermets, ceramics and diamond or c-BN high pressure sintered compact are used for cutting tools, wear -resistant parts, rock drilling bits and/or high pressure vessels. These hardmaterials contain not only hard phase, but also second consituent as the element for forming ductile phase and/or sintering aid, and the mechanical properties of each material depend on (1) the amount of the second constituent as well as (2) the grain size of the hard phase. The hardness of each material mainly depends on these two factors. The fracture strength, however, largely depends on other microstructur a1 factors as well as the above two factors. For all hardmaterials, the fracture strength is consider ably affected by (3) the size of microstructur a1 defect which acts as the fracture source. In cemented carbides, the following factors which are generated mainly due to the addition of the second constituent are also important; (4) the variation of the carbon content in the normal phase region free from V-phase and graphite phase, (5) the precipitation of $Co_3$ during heating at about $800^{\circ}C$,(6) the domain size of binder phase, and (7) the formation of ${\beta}$-free layer or Co-rich layer near the surface of sintered compacts. For cemented carbides coated with thin hard substance, the important factors are as follows; (8) the kind of coated substance, (9) the formation of ${\eta}$-phase layer at the interface between coated layer and substrate, (10) the type of residual stress (tension or compression) in the coated layer which depends on the kind of coating method (CVD or PVD), and (11) the properties of the substrate, and (12) the combination, coherency and periodicity of multi-layers. In the lecture, the details of these factors and their effect on the strength will be explained.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.511-517
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• 2017

With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.

• Advances in Energy Research
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• v.5 no.3
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• pp.219-226
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• 2017

Electrochemical double layer capacitors (EDLCs) have received a tremendous interest due to their suitability for diverse applications. They have been fabricated using different carbon based electrodes including activated carbons, single walled/multi walled carbon nano tubes. But, graphite which is one of the natural resources in Sri Lanka has not been given a considerable attention towards using for EDLCs though it is a famous carbon material. On the other hand, EDLCs are well reported with various liquid electrolytes which are associated with numerous drawbacks. Gel polymer electrolytes (GPE) are well known alternative for liquid electrolytes. In this paper, it is reported about an EDLC fabricated with a nano composite polyethylene oxide based GPE and two Sri Lankan graphite based electrodes. The composition of the GPE was [{(10PEO: $NaClO_4$) molar ratio}: 75wt.% PC] : 5 wt.% $TiO_2$. GPE was prepared using the solvent casting method. Two graphite electrodes were prepared by mixing 85% graphite and 15% polyvinylidenefluoride (PVdF) in acetone and casting n fluorine doped tin oxide glass plates. GPE film was sandwiched in between the two graphite electrodes. A non faradaic charge discharge mechanism was observed from the Cyclic Voltammetry study. GPE was stable in the potential windows from (-0.8 V-0.8 V) to (-1.5 V-1.5 V). By increasing the width of the potential window, single electrode specific capacity increased. Impedance plots confirmed the capacitive behavior at low frequency region. Galvanostatic charge discharge test yielded an average discharge capacity of $0.60Fg^{-1}$.