• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.87-87
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• 1994

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.152.1-152
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• 2003

• Journal of Powder Materials
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• v.18 no.1
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• pp.41-48
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• 2011

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr)$TiO_3$ powder. Porous (Ba,Sr)$TiO_3$ ceramics were prepared by pressureless sintering at $1350^{\circ}C$ for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr)$TiO_3$ ceramics were investigated. The porosity of porous (Ba,Sr)$TiO_3$ ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from $7.51\;{\mu}m$ to $5.96\;{\mu}m$ with increasing carbon black contents. PTCR jump of the (Ba,Sr)$TiO_3$ ceramics prepared by adding carbon black was more than $10^5$, and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr)$TiO_3$ ceramics prepared by adding 40 vol% carbon black showed an excellent value of $9.68{\times}10^5$, which was above two times higher than that in (Ba,Sr)$TiO_3$ ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr)$TiO_3$ ceramics. It was considered that carbon black is an effective additive for preparing porous $BaTiO_3$ based ceramics. It is believed that newly prepared (Ba,Sr)$TiO_3$ cermics can be used for PTC thermistor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.412-415
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• 2004

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as accepters and sintered $1250^{\circ}C/2hrs$. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $BaTiO_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.349-356
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• 1988

The PTCR characteristics of (Ba0.8Pb0.2)TiO3 ceramics prepared by the molten salt sysnthesis (MSS) method have been investigated as a function of the amount of Nb2O5 dopant and KCl flux. When the weight ratio of KCl to raw material is 0.8, the resistivity at room temperature decreases with increasing amount of Nb dopant up to 0.6 atom%. It can be explained by compensation for electrons due to Nb+5 ion and holes due to K+ ion. The resistivity of (Ba0.8Pb0.2)(Ti0.994Nb0.006)O3 ceramics at room temperature decreases with increasing the ratio of KCl to raw material up to 0.6, and then increases. These results can be explained by the effect of K+ ion.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.15-15
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• 2010

$Na_2Ti_6O_{13}$ (NT)가 도핑된 $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ BBNT) PTCR 세라믹스를 변형된 세라믹공정을 이용하여 제조하였다. 제조된 BBNT 세라믹의 미세구조와 PTCR 특성에 미치는 NT의 효과를 조사하였다. $1300^{\circ}C$에서 합성된 BBNT 세라믹은 NT의 도핑량이 증가함에 따라 비정상적으로 성장된 입자의 수가 증가하였다. 뿐만 아니라, NT의 도핑량 증가는 상온비저항을 약간 증가시켰지만 큐리온도 (Tc) 부근의 최대비저항/최소비저항으로 정의되는 PTC 점프 특성을 크게 향상시켰다. 특히, 0.01mol%의 NT 도핑 시 상온비저항은 $425\;\Omega{\cdot}cm$, PTC 점프는 ($2.02{\times}^10^5$) 저항온도계수는 69.8% 및 Tc는 $155^{\circ}C$의 우수한 결과를 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.52-52
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• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.7-12
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• 1990

The influence of MnO2 on the sintering property and PTCR behavior of(Ba0.8Sr0.2)TiO2 has been investigated. And the densities, grain sizes and electrical resitivities of specimens were measured as a function of doping with Mn ion of varying concentration. The density and grain size of the sintered specimens were almost the same regardless of MnO2 addition up to 0.2mol% MnO2. But in the case of 0.25mol% MnO2 addition, abnormal grain growth was appeared. So the grain size distribution was wide and density decreased greatly. The room-temperature resistivity increased as Mn content increased and the temperature coefficient of resistivity was highest in the case of 0.15mol% MnO2 addition.