• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.22-26
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• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.2
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• pp.66-72
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• 2010

Recently a large number of electronic control devices are abruptly increasing in vehicles as the electronic industry advances. Also the number of wiring harnesses and complexity of wiring is proportionally increased to the devices. A newly developed connector named bridge connector is introduced in this study for the purpose of the wiring structure changes. A wiring structure among distributed control systems by using serial communication is proposed with the bridge connector in this paper. The bridge connector contains a auto-recovery fuse made by PTC thermistor material for the protection of the over-currents on local control devices. The auto-recovery function of the fuse is needed for the maintenance free system in the distributed controls. The PTC fuse characteristics organized in this study is tested and the results are showed in detail for the real application.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.113.1-113
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• 2003

• 전기의세계
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• v.41 no.3
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• pp.38-42
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• 1992

써미스터(THERMLISTOR)는 Thermally Sensitive Resistor의 약칭으로 온도변화에 대한 저항치의 변화가 극히 크게 변화하는 특징을 갖는 감온반도체이다. 이중에는 부특성 또는 NTC(Negative Temperature Coeffient) THERMISTOR와 정특성 또는 PTC(Positive Temperature Coeffient)THERMISTOR의 두종류와 NTC와 동일한 부의 온도계수이지만 어떤 온도영역에서 저항치가 급격히 감소하는 CTR로 분류한다. 이렇게 3가지 종류로 분류되는 THERMISTOR중 우리주변에서 가장 널리 보급되고 가정생활에서 실제로 흔히 볼수 있는 가전기기의 온도검출용 sensor로 많이 사용되고 있는 THERMISTOR SENSOR에 대해서만 기초지식을 알아보기로 하고 다음기회에는 응용기술에 대해서 알아보기로 하겠다.

• Proceedings of the KIEE Conference
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• 1976.08a
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• pp.67-68
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• 1976

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.673-679
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• 2006

The discovery of ferroelectric barium titanate (BaTiO$_3$) in 1942 began the present era of dielectrics-based electronic ceramics. Ferroelectric barium titanate has a high dielectric constant and after the recognition of BaTiO$_3$ as a new ferroelectric compound, various attractive electrical properties have been extensively studied and reported. Since then, pioneering work on valence-compensated semiconduction led to the discovery of the positive temperature coefficient (PTC) of the resistance effect found in doped BaTiO$_3$. Significant progress has since followed with respect to understanding the PTC phenomena, advancing materials capabilities, and developing devices for sensor and switching applications. In this paper, the theoretical aspects of the various PTC models are discussed and the future trends of practical applications for PTC devices are briefly mentioned.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1493-1494
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• 1998

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified $BaTiO_3$ systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between $1325^{\circ}C$ and $1375^{\circ}C$. When Ti/Ba mole ratio was 1.005 and sintering temperature was $1350^{\circ}C$, the breakdown voltage shows 260[V /mm].

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• Proceedings of the Speleological Society Conference
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• 2005.11a
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• pp.69-77
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• 2005

비 직선적 정(+) 저항온도계수 특성을 갖은 PTC thermistor눈 전이온도(큐리점) 부근에서 온도변화에 대하여 극히 큰 저항 값의 변화를 나타내는 산화물계반도체 저항기(또는 발열체)로써, 일반적으로 반도체의 온도-저항 특성과 같이 상온영역에서 온도의 상승과 함께 부성저항 특성을 나타내어 감소하다가, 온도가 점점 증가하여 큐리점 부근에 도달하면 저항이 급격히 증가하는 독특한 특성을 갖는다. Perovskite 구조의 BaTiO$_3$를 주성분으로 미량의 Dopant를 첨가하여 도전성을 갖게 한 N형 반도체의 일종으로, 저항-온도 특성, 전류-전압 특성, 전류감쇄 특성 등을 이용하여 과전류 보호회로, 히터, TV 소자회로(degausser) 모터기동회로, 온도센서, 정온발열기기 등으로 널리 사용된다. 본 연구는 큐리점 부근의 급격한 저항변화 현상과 결정입계의 전위장벽 형성 및 그에 따른 정온발열 기능의 상관성으로부터 정온발열 탐사기능 온열부츠 제작 용 PTC 부픔소재의 응용성을 조사하였다.