• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.52-52
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• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.638-644
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• 2008

The effects of $Nb_2O_5$ and $MnO_2$ on the positive temperature coefficient of resistivity (PTCR) behavior of lead-free $Ba_{0.99}(Bi_{1/2}Na_{1/2})_{0.01}TiO_3$ (BaBiNT) ceramics were investigated in order to fabricate a PTC thermistor available at high temperature of > $120^{\circ}C$. In particular, 0.05 mol% $Nb_2O_5$ added BaBiNT ceramic, which has significantly increased Curie temperature (Tc) of $160^{\circ}C$, showed good PTCR behavior; low resistivity at room temperature $(\rho_r)$ of $80.1{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $5.65{\times}10^3$ and a large resistivity temperature factor (a) of 18.5%/$^{\circ}C$. Furthermore, the improved $\rho_{max}/\rho_{min}$ of $6.48{\times}10^4$ and a of 25.4%/$^{\circ}C$ along with higher $T_c$ of $167^{\circ}C$ despite slightly increased $\rho_r$ of $569{\Omega}{\cdot}cm$, could be obtained for the BaBiNT + 0.05 mol% $Nb_2O_5$ + 0.02 wt% $MnO_2$ ceramic cooled down at a rate of $200^{\circ}C/h$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.36-36
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• 2001

$BaTiO_3$는 현재 전기 전자 부속 산업엣 필수적인 재료로서, multilayer capacitor,positive temperature coefficient(PTC) resistor, grain-boundary battier layer capacitor(GBBLC)등에 쓰이고 있다. $BaTiO_3$의 전기적 특성을 최대화하기 위해서는 미세구조가 최적화 되어야만 하는데 일반적으로 수 마이트로 이내의 작고 균일한 크기의 입자크기가 바람직하다. 그러나 $BaTiO_3$계에서 화학양론의 조성이 정확하게 일치하지 않거나 $La^{3+}$나 $Nb^{5+}$같은 첨가제가 들어가지 않으면 비정상 입자 성장은 자발적으로 일어난다. 그러나 첨가제는 $BaTiO_3$의 강자성 특성에 영향을 주게 되므로 첨가제 없이 비정상 입자 성장을 억제할 수 있는 것이 바람직한 방법이며, 이 것이 본 실험의 목표이다. 본 실험에서는 0.4-mol%-$TiO_2$가 첨가된 $BaTiO_3$ 분말을 디스크 형태로 성형하여 $H_2$ 분위기, 1250에서 5시간동안 열처리한 후, 공기 중, 1300도에서 48시간까지 소결한 후 미세조직을 관찰하였다. 소결 전에 $H_2$ 분위기에서 열처리를 함으로서 초기 입자 크기는 증가하게 되고 이로 인한 계의 성장 구동력 감소로 비정상 입자 성장이 억제되었으며 균일하고 미세한 입자 크기를 가지는$BaTiO_3$ 소결체를 얻을 수 있었다. 또한 비정상이 억제되지 않은 $BaTiO_3$의 유전 특성보다 우수한 유전 특성을 나타내었다. 본 실험을 통해서 첨가제를 사용하지 않고 우수한 유전 특성을 가지는 미세한 균일한 입자의 $BaTiO_3$를 제조하는 새로운 기술을 개발하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• The Journal of Korean Medicine
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• v.27 no.1 s.65
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• pp.165-183
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• 2006

Objectives : We implemented the Artemisia Extract Moxibustion Method and had the clinical tests for the diabetes with it. Methods : We implemented Artemisia extract made by extracting the vasodilator and antioxidant compounds from Artemisia-CH2C12 fraction and the moxibustion method constructed with DC Power supply, controller, Artemisia pad. single and multiple heating terminal with PTC(Positive Temperature Coefficient) thermistor. And we performed to estimate the efficiency on the questionnaire and the clinical tests with 23 cases of the diabetics. Results : We have estimated the improvement over 60% the symptoms that were the upper and lower limbs pain, frequent urination, spontaneous perspiration, thirst, decrease of body weight, and malaise after the moxibustion treatment on 5 cases among 23 cases. And the 19 cases took the biochemical check-up after the moxibustion treatment. From the results of biochemical check-up, the average HbAlc of before treatment was 8.400%, and after treatment 7.632%. The average HbAlc was decreased significantly after treatment (P<0.001). And the average urinary blood of before treatment was 0.73 and after treatment 0.27. The average urinary blood was decreased significantly after treatment (P<0.001). In addition the average FBS before treatment was 182.64 mg/dl, after treatment 161.77 mg/dl. Conclusions : We could estimate that our proposed moxibustion method was a significant treatment method for the diabetes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.288-288
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• 2007

본 연구에서 내환원성 $BaTiO_3$의 PTCR(Positive Temperation Coefficient Resistance) 특성 및 미세구조에 대한 분쇄 및 출발 원료들의 하소 조건의 영향을 연구하였다. $BaCO_3$, $TiO_2$, $CeO_2$를 Attrition milling 하여 1차 혼합 및 분쇄한 후 건조하여 혼합분말을 얻었으며, $(Ba_{1-x}Ce_x)TiO_3$를 합성하기 위하여 $1000^{\circ}C{\sim}1200^{\circ}C$ 공기중에서 하소하였다. 각 하소온도에서 제조한 $(Ba_{1-x}Ce_x)TiO_3$에 첨가제를 2차 혼합하고 초미분쇄하여 분말을 제조하였다. 직경 5mm 의 시편을 제조하여 환원 및 재산화 분위기에서 소결을 한 후 상온저항값 및 R-T특성을 측정하였고 SEM 을 통해 미세구조를 관찰하였다. 또한 하소 후 온도에 따른 상분석을 XRD를 통하여 분석하였다. 그 결과 하소온도가 증가함에 따라 상온저항값은 감소하는 경황을 보였으며 PTC특성은 감소하다가 증가하는 경향을 보였다. 초미분쇄에 따른 입자크기는 $1{\mu}m$이하로 작아졌으며 미립화가 됨에 따라 하소/소결온도에 앙향을 줄 것으로 사료된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.35-40
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• 2009

Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ solid solution were prepared by a conventional solid state reaction method. The phase structure was showed single phase with perovskite structure regardless calcinations temperature and $Ba_{1-x}(Bi_{0.5}Na_{0.5})_xTiO_3$ structure was transformed from tetragonal to orthorhombic phase at $x{\geq}0.15$ mole. The XRD peaks with $45^{\circ}{\sim}46^{\circ}$ shifted in right the influence of crystal structure change and the intensity of peak was decreased with additive $(Bi_{0.5}Na_{0.5})TiO_3$. The curie temperature risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but disappeared for $(Bi_{0.5}Na_{0.5})TiO_3$ addition more than 0.15 mole in TMA. In relative permittivity, the curie temperature by the transform of ferroelectric phase risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but decreased in relative permittivity. Also, the peak of new curie temperature showed the sample containing $0.025{\sim}0.045$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ near $70^{\circ}C$ caused by phase transform from ferroelectric to ferroelectric and the peak of new curie temperature disappeared at 0.045 mole of $(Bi_{0.5}Na_{0.5})TiO_3$. In our study, it was found that the PTCR in $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ system was possible for $0{\sim}0.025$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ and the maximum curie temperature by phase transition showed about at $145^{\circ}C$.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.