• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.23-29
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• 1996

Thick film type gas sensors with parallel Pt heaters were fabricated by screen printing process and investigated sensitivities for methane gas. The TR7905 was selected as Pt paste for heater by characterization the properties of TCRs and thick film microstructures. The average resistance of parallel Pt heaters was $1.8{\Omega}$, and the best TCR obtained was $3685\;ppm/^{\circ}C$. On the top of the Pt heaters, a sensing layer added with Pt and Pd as catalyst paste was screen printed and heat treated. The sensitivity of the sensor was 4.3mV/1000ppm for methane. The power consumption of the sensors was 2.12watts.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.911-917
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• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.812-817
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• 2008

A catalytic combustible sensor for LPG/LNG detection was fabricated on $Al_2O_3$ substrate using planar technology. The catalysts of Pd and Pt were added to ${\alpha}$- and ${\gamma}-Al_2O_3$ powders. The mixture of Pt, Pd and $Al_2O_3$ were homogenized by using a three roll mixer. TCR characteristics of Pt heater were optimized with the heat treatment temperature. Sensing properties were investigated as a function of the microstructure of $Al_2O_3$, the gas concentration and the variation of input voltage. ${\alpha}-Al_2O_3$ sintered at 500 $^{\circ}C$ is more suitable as LPG/LNG sensor due to good grain shape and size distribution of about 300 nm than that of ${\gamma}-Al_2O_3$ which is in irregular shape and with a particle size of 5-30 ${\mu}m$. The sensor has shown maximum output voltage of 14 mV for 1000 ppm $C_4H_{10}$ and 3.8 mV for 1000 ppm $CH_4$ at 5.0 V input voltage.

• Journal of IKEEE
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• v.23 no.1
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• pp.159-163
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• 2019

The food service industry has been grown due to improvement of living standards. In addition, the demand for frozen food delivery is increasing day by day at online/offline and the refrigerated vehicles are used in most of these food distributions. One of the most important factors in a refrigerated car is to measure the temperature accurately. Conventional temperature recording systems are generally connected directly to temperature sensor modules. Since the temperature data are transmitted to the temperature recorder by using the electric wire, there is a disadvantage that the resistance error must be compensated according to the cable length. In this paper, we propose a method to correct errors due to cable resistance using digital processing and CAN (Controller Area Network) communication. We use PT-1000 platinum sensor to increase the accuracy of the temperature measurement.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.221-227
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• 1997

The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of the sensor, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET's sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.

• Journal of the Korean Electrochemical Society
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• v.17 no.1
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• pp.18-25
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• 2014

A Pt nanoparticle-decorated multiwall carbon nanotube (Pt-MWNT) electrode was prepared on Nafion by a hot-pressing at relatively low temperature. This electrode exhibited an intricate entangled, nanoporous structure as a result of gathering highly anisotropic Pt-MWNTs. Individual Pt nanoparticles were confirmed to have a polycrystalline face-centered cubic structure with an average crystal size of around 3.5 nm. From the cyclic voltammograms for hydrogen redox reactions, the Pt-MWNT electrode was found to have a similar electrochemical behavior to polycrystalline Pt, and a specific electrochemical surface area of $2170cm^2mg^{-1}$. Upon exposure to hydrogen analyte, the Pt-MWNT/Nafion electrode demon-strated a very high sensitivity of $3.60{\mu}A\;ppm^{-1}$ and an excellent linear response over the concentration range of 100-1000 ppm. Moreover, this electrode was also evaluated in terms of response and recovery times, reproducibility, and long-term stability. Obtained results revealed good sensing performance in hydrogen detection.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.3-9
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• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.E2
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• pp.69-75
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• 2004

In this study, thin film gas sensor based on tin oxide was fabricated to examine its characteristics. Target gas is acetonitrile ($CH_3$CN) which is a blood simulant for the chemical warfare agent. Sensing materials are SnO$_2$ SnO$_2$/Pt, and Sn/Pt with thickness from 1000 to 3000 $\AA$. The sensor consists of a sensing electrode with inter-digit (IDT) type in front side and a heater in rear side. Resistance changes of sensing materials are monitored on real time basis using a data acquisition board with a 12-bit analog to digital converter. Sensitivities are measured at different operating temperatures also with different gas concentrations and film thickness. The high sensitivity is obtained for Sn (3000 $\AA$)/Pt (30 $\AA$) at 30$0^{\circ}C$ for 3 ppm. Response and recovery times were about 40 and 160 s, respectively. Repetition measurements showed very good results with $\pm$3% in full scale range.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.7
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• pp.616-623
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• 2007

A dual micro gas sensor array was fabricated using nano sized $SnO_2$ thin films which had good sensitivities to CO and combustible gases, or $H_2S$ gas for air quality sensors in automobile. The already existed air quality sensor detects oxidizing gases and reducing gases, the air quality sensor(AQS), located near the fresh air inlet detected the harmful gases, the fresh air inlet door/ventilation flap was closed to reduce the amount of pollution entering the vehicle cabin through HVAC(heating, ventilating, and air conditioning) system. In this study, to make $SnO_2$ thin film AQS sensor, thin tin metal layer between 1000 and $2000{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2$, $SnO_2$(pt) and $SnO_2$(+CuO) were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2$(+Pt) and $SnO_2$(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.