• Title/Summary/Keyword: PSPICE

Search Result 364, Processing Time 0.038 seconds

A Study on the GaAs MESFET Modeling and the Method of Parameter Extraction (갈륨비소 MESFET의 모델링과 파라미터 추출법에 관한 연구)

  • 정명래;김학선;이형재
    • Proceedings of the Korean Institute of Communication Sciences Conference
    • /
    • 1991.10a
    • /
    • pp.210-214
    • /
    • 1991
  • We briefly compared GaAs MESFET model and s셔요 on the method of parameter extraction for PSPICE simulation. The parameter determined from above method were substituded into a commercial version of PSPICE which supports the hyperbolic tangentent model. The result of simulation is reasonably good at the lower VGS and is significantly fitted overall by optimization.

A PSpice Model for the Electrical Ballast of HID Lamps (전자식 안정기를 위한 HID Lamp 시뮬레이션 모델)

  • Chi, Y.K.;Kwon, W.M.;Kim, N.J.
    • Proceedings of the KIEE Conference
    • /
    • 2002.04a
    • /
    • pp.123-125
    • /
    • 2002
  • To simulate the characteristics of an High-Intensity Discharge Lamp, this paper uses PSpice circuit model which have been developed from modification of the classical Cassie and Mayr equations. The model is for an High-Intensity Discharge Lamp and compatible to adopt high-frequency electric ballast. This model is correspond to some conditions between the simulated and experimental results.

  • PDF

Pspice Simulation for Nonlinear Components and Surge Suppression Circuits (비선형 소자 및 서지억제회로의 Pspice 시뮬레이션)

  • Lee, Bok-Hui;Gong, Yeong-Eun;Choe, Won-Gyu;Jeon, Deok-Gyu
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.49 no.8
    • /
    • pp.477-486
    • /
    • 2000
  • This paper presents Pspice modeling methods for spark gaps and ZnO varistors and describes the application for the two-stage surge suppression circuit which was composed of the nonlinear components. The simulation modelings of nonlinear components were conducted on the basis of the voltage and current curves measured by the impulse current with the time-to-crest of $1~50 \mus$ and the impulse voltage with the rate of the time-to-crest of 10, 100 and 1000 V/\mus$. The firing voltages of the spark gap increased with increasing the rate of the time-to-crest of impulse voltage and the measured data were in good agreement with the simulated data. The I-V curves of the ZnO varistor were measured by applying the impulse currents of which time-to-crests range from 1 to $50 \mus$ and peak amplitudes from 10 A to 2 kA. The simulation modeling was based on the I-V curves replotted by taking away the inductive effects of the test circuit and leads. The meximum difference between the measured and calculated data was of the order of 3%. Also the two-stage surge suppression circuit made of the spark gap and the ZnO varistor was investigated with the impulse voltage of $10/1000\mus$$mutextrm{s}$ wave shape. The overall agreement between the theoretical and experimental results seems to be acceptable. As a consequence, it was known that the proposed simulation techniques could effectively be used to design the surge suppression circuits combined with nonlinear components.

  • PDF

Experimental Study on an Electrical Circuit Model for neuron synapse based Memristor (뉴런 시냅스를 위한 멤리스터의 전기회로 모델의 실험적 연구)

  • Mo, Young-Sea;Song, Han-Jung
    • Journal of the Korean Institute of Intelligent Systems
    • /
    • v.26 no.5
    • /
    • pp.368-374
    • /
    • 2016
  • This paper presents an experimental study on an electrical circuit model of the TiO2-based nano-wired memristor device for neuromophic applications. The electrical circuit equivalent model of the proposed memristor device consists of several electronics components and some passive devices including operational amplifiers, multipliers, resistors and capacitors. In order to verify the proposed design, both of simulation (using PSPICE) as well as hardware implementation were performed for the analysis of the memristor circuit with time waveforms, frequency spectra, I-V curves and power curves. The gained results from the measured data showed a good agreement with the simulation result that confirm the proposed idea.

Comparative Pixel Characteristics of ELA and SMC poly-Si TETs for the Development of Wide-Area/High-Quality TFT-LCD (대화면/고화질 TFT-LCD 개발을 위하여 ELA 및 SMC로 제작된 다결정 실리콘 박막 트랜지스터의 화소 특성 비교)

    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.1
    • /
    • pp.72-80
    • /
    • 2001
  • In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT(Thin-Film Transistor) for Spice simulations. This method has been applied to two different types of poly-Si TFTs such as ELA (Excimer Laser Annealing) and SMC (Silicide Mediated Crystallization) with good fitting results to experimental data. Among the Spice circuit simulators, the PSpice has the GUI(graphic user interface) feature making the composition of complicated circuits easier. We added successfully the poly-Si TFT model of AIM-Spice to the PSpice simulator, and analyzed easily to compare the electrical characteristics of pixels without or with the line RC delay. In the comparative results, the ELA poly-Si TFT is superior to the SMC poly-Si TFT in the charging time and the kickback voltage for the TFT-LCD (Thin Film Transistor-Liquid Crystal Display).

  • PDF

A Study on the Characteristics of PCS Using a Solar Cells Generation of Optimal Integrated (최적 일체형 태양광 발전용 전력변환장치 PCS 특성에 관한 연구)

  • Hwang, Lark Hoon
    • Journal of IKEEE
    • /
    • v.23 no.3
    • /
    • pp.1003-1014
    • /
    • 2019
  • In this paper, we modeled the devices used easily in PV system circuits. Simulation tools use PSPICE to enable intuitive electrical circuit simulations. Simulations were also performed on the effects of temperature and spatial radiation that are easy to overlook when using solar cells using modelled libraries. In addition, for full operation of the photovoltaic system, a complete operation system for the DC-DC buck-boost converter and the MPPT(Maximum Power Point Tracking) control system was modeled and simulated to confirm good operation. In order to verify the operation of the simulation, we constructed an actual system with the same conditions in the simulation and experimented. As a result, we proposed a single-phase 3 kW grid-connected solar power converter.

Modeling of Poly-Si TFT and Circuit Simulation for the Analysis of TFT-LCD Characteristics (TFT-LCD 특성 분석을 위한 poly-Si TFT 소자 모델링 및 회로 시뮬레이션)

  • Son, Myung-Sik;Ryu, Jai-Il;Shim, Seong-Yung;Jang, Jin;Yoo, Keon-Ho
    • Proceedings of the IEEK Conference
    • /
    • 2000.06b
    • /
    • pp.314-317
    • /
    • 2000
  • In order to analyze the characteristics of complicated TFT-LCD (Thin Film Transistor-Liquid Crystal Display) circuits, it is indispensible to use simulation programs. In this study, we present a systematic method of extracting the input parameters of poly-Si TFT for Spice simulation. This method is applied to two different types of poly-Si TFTs fabricated in our group with good results. Among the Spice simulators, Pspice has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT model on the Pspice simulator, which would contribute to efficient simulations of poly-Si TFT-LCD pixels and arrays.

  • PDF