• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1668-1669
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• 2011

본 논문에서는 Pogo Pin의 신호 전달 특성을 Ansys사의 Full wave simulation tool(HFSS)를 사용하여 분석하였고, 측정을 위해서 필요한 interface(Guide PCB)의 특성은 2-port de-embedding 방법을 이용하여 제거하였다. Guide PCB의 특성이 제거된 Pogo Pin만의 시뮬레이션 결과와 circuit simulator인 Agilent사의 ADS를 사용하여 Guide PCB의 특성을 de-embedding한 결과를 비교 검증하였고, Pogo Pin의 시뮬레이션 결과와 PCB의 특성을 de-embedding한 결과가 0~8 GHz까지 일치하는 것을 확인하였다.

• Journal of Aerospace System Engineering
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• v.12 no.5
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• pp.69-75
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• 2018

In this study, we proposed a nylon wire cutting-type solar panel separation mechanism for CubeSat applications using spring-loaded pogo-pins, which has been widely used as temporary electrical interface between two separate electronics. The mechanism proposed in this study has great advantages of higher holding capability, ability to constrain along in-plane and out-of-plane directions of solar panels, simplicity in tightening of nylon wire and synchronous separation of multiple panels. In addition, the pogo-pins used for the proposed mechanism act as electrical power interface, separation status switch and separation spring. In this study, the functionality of the proposed mechanism was validated through the separation tests with various number of nylon wire windings.

• Journal of Aerospace System Engineering
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• v.17 no.2
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• pp.94-102
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• 2023

A nylon wire holding and release mechanism (HRM) has been widely used for deployable applications of CubeSat owing to its simplicity and low cost. In general, structural safety of solar panel with an HRM has been designed by performing structural analysis under a launch environment. However, previous studies have not performed thermal analysis for HRM in an on-orbit environment. In this study, Launch and Early Orbit Phase (LEOP) thermal analysis was performed to evaluate thermal stability of the mechanism in the orbital thermal environment of the pogo pin-based HRM applied to CubeSat. In addition, the effectiveness of the thermal design and performance of the pogo pin-based HRM were verified through a thermal vacuum test.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.473-474
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• 2007

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.545-551
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• 2012

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The $SnO_2$ phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< $150^{\circ}C$). Further oxidation to $SnO_2$ is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.