• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.424-424
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• 2012

ZnO는 수열합성법을 통해 저온에서 단결정으로 성장할 수 있기 때문에 광전소자 및 압전소자로 응용되고 있으나, 성장된 ZnO nanowire 내부 산소 결함 및 표면에 OH기의 흡착에 의해 소자특성 저하를 발생시킨다. 본 연구에서는 ZnO의 결함의 최소화를 위해 Glass 기판에 수열합성법으로 성장된 ZnO nanowire를 ICP 플라즈마 장치를 이용하여 O2 25 sccm, Base Pressure $1.5{{\times}}10^{-3}$ Torr을 기준으로 파워와 시간에 따라 표면처리 하였다. 플라즈마 처리된 ZnO nanowire의 결함특성과 형상을 XPS와 FE-SEM를 통하여 분석하였으며, ZnO nanowire의 소자특성을 평가를 위해 Kapton Film/AZO/ZnO nanowire/PMMA/Au 구조의 발전기를 제작하였다. 150 W, 10 min에서 532.4 eV의 -OH결합이 최소화됨을 확인하였으며, 이를 이용하여 Flexible ZnO nanowire 발전기 제작 했을 경우 최대 Voltage 5 V, Current 156 nA 전기적 특성을 확인하였다.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1499-1500
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• 2011

In this paper, we investigated the electrical properties change of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) depending on polymer blend. We fabricated organic thin film transistor (OTFT) using blending solution of small molecule and polymer. In this study poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV), poly (9-vinylcarbazole) (PVK), poly [N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (poly-TPD), poly(${\alpha}$-methyl styrene), Poly(methyl methacrylate) (PMMA) are used as a polymer. Fabricated OTFT with blending solution of TIPS-pentacene and PVK shows best performance in this experiment. OTFT fabricated by blending solution of TIPS-pentacene and PVK shows field effect mobility of 0.0189 $cm^2/V{\cdot}s$, on/off ratio of 1.9E-5 and threshold voltage of 7.4 V.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1353_1354
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• 2009

The OTFT devices had inverted staggered structures of Au/pentacene/ppMMA/ITO on PET substrate. The overall device performances of the flexible devices such as the operating voltage, the field effect mobility, the on/off ratio and the off current are somewhat worse than those of devices fabricated on glass substrates. Pentacene/ppMMA OTFT benchmarks (mobility, sub-threshold slope, on/off ratio) were comparable to that of solution cast PMMA, but below average when compared to other polymer gate dielectrics. However, threshold and drive voltages were among the lowest reported for a polymer gate dielectric, and surpassed only by ultra-thin SAM gate dielectrics.

• Journal of the Korean Graphic Arts Communication Society
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• v.13 no.2
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• pp.1-17
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• 1995

Organic thin film electroluminescene devices were fabricated using by molecularly doped method with N,N`-diphenyl-N,N`-bis(3-methylphenyl)-1,1`-biphenyl-4,4`-diamine(TPD) as a hole transport material, tris(8-quinolinolate) aluminium(III)(Alq3) as an emitting and electron transport agent, fluorescent squarylium(SQ) dye as a dopant, and poly(methylmethacrylate) as polymer materials. A cell structure of ITO/TPD-PMMA/Alq3-dopant/Mg was employed. The EL spectrum covers a wide range of the visible region and orange emission os observed. Two peaks at 520 and 660nm correspond to the emissions 620nm Alq3 and SQ dye, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.223-226
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• 1998

Organic conducting N-methyl phenazinium TCNQ (7,7,8,8-tetracyanoquinonedimethane) ion radical salt was synthesized and characterized by FTIR, EA. After blending this material with PMMA using NMP/DMF, the solution was bar-coated on a PET film and dried at 40$^{\circ}C$. The optical micrograph showed the fibril crystals. The surface resistivity was 10$\^$5/ $\Omega$/$\square$. The conductivity decreased considerably at temperatures above 80$^{\circ}C$, although it decreased slightly at RT and 4$^{\circ}C$.

• Journal of Magnetics
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• v.13 no.2
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• pp.53-56
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• 2008

This study proposes a simple nano-patterning process for the fabrication of magnetic nanodot arrays on a large area substrate. Ni nanodots were fabricated on a large area (4 inches in diameter) Si substrate using the soft lithographic technique using self-assembled surface micelles of Polystyrene-block-Poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer formed at the air/water interface as a mask. The hexagonal array of micelles was successfully transferred to a Ni thin film on a Si substrate using the Langmuir-Blodgett technique. After ion-mill dry etching, a magnetic Ni nanodot array with a regular hexagon array structure was obtained. The Ni nanodot array showed in-plane easy axis magnetization and typical soft magnetic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.699-702
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• 2004

Next generation lithography technologies, such as EBL(Electron Beam Lithography), X-ray lithography, SPL(Scanning Probe Lithography), have been studied widely for getting over line width limitation of photolithography. Among the next generation lithography technologies, SPL has been highlighted because of its high resolution advantage. But is also has problem which are slow processing time and sample size limitation. The purpose of this study is complement of present SPL system. Brand new SPL system was made. SPL test was performed with the system in ultra thin PMMA(polymethlymethacrylate) film.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.200-205
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• 1995

The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.183-185
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• 2002

Heavy ion and proton therapy necessitate range weeks, which are time consuming. Three types of variable compensator, membrane type liquid variable compensator, are proposed by some of the authors to overcome the difficulties, by those arbitrarily thickness distribution of compensator obtained from treatment planning is created at the site of treatment. None of the ideas, however, is yet realized. In this research, we are trying to construct prototype membrane-type liquid variable compensator. This variable compensator partitions air and liquid with elasticity membrane and changes the surface of the elasticity membrane with the thread. The air and oil move through holes to and from the out of beam side of two boxes in which they are contained. The boxes are made of Plexiglas(PMMA), the thread which is made of nylon, the elasticity film which is made from latex for the moment.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2474-2479
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• 2009

This paper presents an atmospheric microplasma-jet device for bio~medical application. The microplasma-jet device consists of four components; a thin Ni anode, porous alumina insulator, a stainless steel cathode and an aluminum case. The anode has 8 holes, and hole diameter and depth are $200 {\mu}m$ and $60 {\mu}m$, respectively. The discharge test was performed in atmospheric pressure using nitrogen gas and AC voltage at the optimum gas flow rate of 4 Vmin. The plasma-jet is ejected stably for the input voltage ranging from 5.5 to $9.5 kV_{p-p}$. The plasma becomes dense as the input voltage increases, which was verified by the hydrophilicity change of PMMA surface treated by the plasma. The temperature increasement of the aluminum film exposed to plasma-jet illustrates that the micro plasma-jet device is feasible for bio-medical application.