• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.378-381
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• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.53-59
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• 1998

Paraelectric lead landthanum titanate(PLT) thin films have been prepared by a reactive dc magnetron sputtering system using a multicomponent metal target. The surface area control of each element on the target markedly facilitates the fabrication of thin films of complex ceramic compounds. A postdeposition heat-treatment was applied to all as-deposited PLT thin films at annealing temperatures up to 75$0^{\circ}C$ for crystalization. The composition of the PLT(28) thin filmannealed at $650^{\circ}C$ was: Pb, 0.73; La, 0.28; Ti, 0.88; O, 2.9. The dielectric constant and dissipation factor of the thin film(200 nm) at low filed measurements (500 Vcm-1) are 1216 and 0.018, respectively. The charge storage density using a typical Sawyer-Tower circuit with a 500 Hz sine wave was 12.5 $\mu$Ccm-2 at the electric field of 200 kVcm-1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.190-194
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• 2003

Dielectric thin films of (P $b_{0.72}$,L $a_{0.28}$) $Ti_{0.93}$ $O_3$ (PLT(28)) have been deposited on Pt(111)/Ti/ $SiO_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition Processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. We have tried to form the film by a two-step deposition process In order to improve electrical property. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film and to reduce the leakage current characteristics. Structural properties and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step Process including pre-annealing treatment has a strongly(111) orientation. However, the films deposited by using single -step process with hydrogen annealing process show the smallest grain size. The film deposited by using two-step process including pre-annealing treatment shows the leakage current density of below 10$^{-7}$ A/c $m^2$ for the field of smaller than 100 kV/cm. However, the films deposited by using single-step process with hydrogen annealing process and pre-annealing process show worse leakage current density than the film deposited by using two-step process including pre-annealing treatment.tment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.861-864
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

• Journal of Physiology & Pathology in Korean Medicine
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• v.28 no.1
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• pp.35-44
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• 2014

This study was performed to investigate the anti-photoaging effects of Persimmon leaf tea(PLT) in hairless mice(SKH-1) exposed to UVB radiation. The animals were divided into non-treated group (normal, N) and UV-radiated groups. UV-radiated groups were divided into only UV-radiated group(control, C) and UV-radiated and PLT treated experimental groups[first extraction treated group(PLT-I), second extraction treated groupe(PLT-II), and third extraction treated group(PLT-III)]. Three PLT treated experimental groups of mice were treated with both oral administration(300mg/Kg B.W./day) and topical application (100 ul of 2% conc./mouse/day) for 4 weeks. Anti-photoaging effects of Persimmon leaf were evaluated by MTT assay, anti oxidative reaction, MMP immunohistochemistry, gelatin zymography assay and RT-PCR observations. Treatment with Persimmon leaf tea(PLT)-I, and -III groups decreased immunohistochemical density of matrix metalloproteinases(MMP)-3 and -9 related to degradation of extracellular matrix in skin. Especially, immunohistochemical density of MMP-2 decreased in PLT-I, -II and -III groups in skin. On the effects of antioxidant function on the treatment with Persimmon leaf tea(PLT), treatment of HaCaT cells with extracts of PLT-I and PLT-II had also significantly reduced intracellular ROS produced by UVB irradiation in a dose dependent manner(PLT-I, p<0.05, p<0.01, p<0.001; PLT-II, p<0.01, p<0.001). Gelatin zymography assay revealed that PLT-II and PLT-III (200 ug/ml) had inhibitory effect on MMP-9 expression in UVB-radiated HaCaT cells. Western blot analysis revealed that PLT-1, -II and -III groups down-regulates the expression of inflammatory associated genes(IL-$1{\beta}$) and PLT-1 and -II groups down-regulates the expression of TNF-${\alpha}$ in a dose dependent manner. Our study suggests that Persimmon leaf tea(PLT) extracts participates in inhibitory effects on the morphological and molecular experiments related to photoaging skin on UVB irradiated hairless mice.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.17-21
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• 2000

In order to investigate the dependence of a content in lead lanthanum titanate (PLT) films and heat treatment, sol-gel process has been used. Four types of PLT thin films with the chemical formula, Pb$\_$1-x/ La$\_$x/Ti$\_$1-x/4/O$_3$(X=18, 21, 24 and 28 mole %) have been fabricated on Pt/Ti/SiO$_2$/Si multi-layers and ITO/glass substrates, The post-annealing temperature in the range of 400~700 $\^{C}$ is applied for the formation of perovskite structure in PLT films. The structureal, electrical and optical properties of PLT film with the addition of La content are estimated. The films orientation and surface structure of films are studied by XRD (X-ray diffraction) and SEM(scanning electron microscopy). The P-E hysteresis loop become narrower with increasing La content. The average transmittance of the films is about 80%.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.03a
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• pp.518-525
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• 2009

The bi-directional high pressure pile load test(BDH PLT) which is a kind of pile load tests was conducted to find out a reasonable design procedure of large-diameter drilled shafts of large-size building structures. The behaviors of bearing capacity and settlement of the large-diameter drilled shafts were analyzed and the results obtained from BDH PLT were also compared with those obtained from the equations suggested in the specification. In case of the reasonable design procedure adopted, the construction cost could be saved at least 15 ~ 28%. It could be concluded that BDH PLT should be needed for the foundation construction cost reduction of the high-rise building structures.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.22-31
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• 1997

We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..