• ETRI Journal
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• v.24 no.5
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• pp.398-400
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• 2002

Using $Cr_2O_3$ thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 ${\mu}m$ without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lightwave circuit platforms for opto-electronic hybrid integration.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.12
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• pp.1376-1381
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• 2012

Optical devices are used extensively in the field of information network. Increasing demand for optical device, optical interconnection has been a important issue for commercialization. However many problems exist in the interconnection between optical device and optical fiber, and in the case of the multi-channel, problems of the optical alignment and optical array arise. For solving the alignment and array problem of optical device and the optical fiber, we fabricated fiber alignment and array by using imprint technology. Achieved higher precision of optical fiber alignment and array due to fabricating using imprint technology. The silicon stamp with different depth was fabricated using the conventional photolithography. Using the silicon stamp, a nickel stamp was fabricated by electroforming process. We conducted imprint process using the nickel stamp with different depth. The optical alignment and array by fabricating the patterns of optical device and fiber alignment and array using imprint process, and achieved higher precision of decreasing the dimensional error of the patterns by optimization of process. The fabricated optical interconnection of PLC device was measured 3.9 dB and 4.2 dB, lower than criteria specified by international standard.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.