• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.49-53
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• 2001

Vortical etching experiments of ($SrBi_2Ta_2O_9$)/Si thin films have been performed by using the inductively coupled plasma reactive ion etching (ICP-ME) apparatus. The purposes of these experiments are to get the effective area of vertical surface. Because this technology is very important to get good qualities of ferroelectric gate structure, capacitor and the minimum parasitic effects related to the excellent performances of the FRAM (Ferroelectric Random Access Memory) device. The reacting gases were Ar and $Cl_2$gases, and various $Ar/C1_2$flow ratios were used. The etching experiments were carried out at various RF powers such as 700, 700, 500W and at various DC powers such as 200, 150, 100, 50W, respectively. The maximum etch rate of $SrBi_2Ta_2O_9$/Si thin films was 1050 A/min at the $Ar/C1_2$ gas ratio of 20/16, RF power of 700 W and DC power of 200 W. From the SEM (scanning electron microscopy) image of the SBT thin films, the wall angle was as good as about $82^{\circ}$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.4
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• pp.1-8
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• 2005

Plasma researches using parallel-plate electrodes are widely used in semiconductor application such as etching and thin film deposition. Therefore, a quantitative understanding and control of plasma behavior are becoming increasingly necessary because their important applications and simulation techniques have been actively carried out in order to solve such problems above. In this paper, we developed a two-dimensional(2D) self-consistent fluid model, because 2D models can deal with real reactor geometries. The fluid model is based on particle continuity equations for taking account of an electrode system in a cylindrical geometry. An pure Ar gas was used at 500[mTorr] and radio-frequency (13.56(MHz)). Four models were simulated under the different electrode geometries which have chamber widths of 5.25, 6.0, 8.0, and 10.0[cm] and we compared their results with each other. Plasma uniformity and a do self-bias voltage were also discussed.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.151-157
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• 2012

The two dimensional electron gas system based on GaAs/$Al_xGa_{1-x}As$ heterostructure is widely used for fabricating quantum structures such as quantum dot, quantum point contact, electron interferometer and so on. However the conductance of the device is usually unstable due to the presence of random telegraph noise in the device. To overcome such problem, we have studied the effect of surface state on the stability of the device by altering the surface state of the device with oxygen plasma. The dramatic improvement of the device stability has been observed after cleaning the device surface with oxygen plasma (by 50 W~120 W plasma power) for 30 sec followed by etching in HCl : $H_2O$ (1 : 3) solution.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.397-402
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• 1998

$SiO_2$ etch characteristics were studied as a function of the basic parameters, such as the main RF power and the operating pressure in a helicon plasma. $SiO_2$ etch characteristics were improved as the main RF power was increased and the operating pressure was decreased. $SiO_2$ etch selectivity over silicon increased from 2.9 to 25.33 when the RF input power increased from 300 W to 2 kW and from 2.3 to 16.21 when the operating pressure decreased from 10 mTorr to 1.5 mTorr with $C_4F_8$ plasma. We used a quadrupole mass spectrometer to measure the relative abundancies of various ionic and radical species to explain the experimental results and found that when the operating pressure is low and the RF input power is high, the highly selective $SiO_2$ etch is achieved as a result of density increment of the densities of various ionic species.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric $YMnO_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of $YMnO_3$ thin film is $300{\AA}/min$ at $Ar/Cl_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, YFx compounds were found on the surface of $YMnO_3$ thin film which is etched in $Ar/Cl/CF_{4}$ plasma. The etch profile of $YMnO_3$ film is improved by addition of $CF_4$ gas into the $Ar/Cl_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of Surface Science and Engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Korean Journal of Materials Research
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• v.34 no.6
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• pp.303-308
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• 2024

The semiconductor and display industries require the development of plasma resistant materials for use in high density plasma etching process equipment. Yttria (Y₂O₃) is a ceramic material mainly used to ensure good plasma resistance properties, which requires a dense microstructure. In commercial production, a sintering process is applied to reduce the sintering temperature of Y₂O₃. In this study, the effect of the addition of glass frit to the sintered specimen was examined when manufacturing yttria sintered specimens for semiconductor process equipment parts. The Y₂O₃ specimen was shaped into a Ø50 mm size and then sintered at 1,600 ℃ for 1~8 h. The characteristics, X-ray diffraction pattern, densities, contraction rate of the specimen, and swelling of the surface of the Y₂O₃ specimens were investigated as a function of the sintering time and glass frit addition. The Y₂O₃ specimen exhibited a density of over 4.9 g/cm³ as the sintering time increased, and the swelling phenomenon characteristics were improved by glass frit, by controlling particle size.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.