Effects of No addition on chemical dry etching of silicon oxide layers in $F_2/Ar\;and\;F_2/Ar/N_2$ remote plasma processing
($F_2/Ar$ 과 $F_2/Ar/N_2$ 리모트 플라즈마 산화막 식각에 대한 NO를 첨가효과)
-
- Proceedings of the Korean Institute of Surface Engineering Conference
- /
- 2006.04a
- /
- pp.134-134
- /
- 2006