• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.127-128
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• 2009

CCP방식의 식각에 있어서 CF4/O2 Plasma Etch에 Ar을 첨가함으로써 Etch특성이 어떻게 변화하는지를 조사하였다. FE-SEM를 이용하여 Etch Profile를 측정하였다. 또한 Elipsometer와 Nanospec을 이용하여 Etch rate를 측정하였다. Ar의 비율이 전체의 47%정도를 차지하였을 때까지 Etch Profile이 향상되었다가 그이후로는 다시 감소하는 것을 볼 수 있었다. Ar을 첨가할수록 etch rate은 계속 향상되었다. Ar을 첨가하는 것은 물리적인 식각으로 반응하여 Etch rate의 향상과 적정량의 Ar을 첨가했을 때 Etch profile이 향상되는 결과를 얻었다.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.281-283
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• 2005

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2009.03a
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• pp.14-20
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• 2009

Atmospheric pressure air plasma was applied for treatment of different kinds of natural bamboo fiber to improve their mechanical properties and surface characteristics, which are suitable for adhesion and dyeing. The tensile strength and Young modulus of bamboo fiber were significantly improved; SEM and AFM study show that the surface of fiber became cleaner and rougher after plasma treatment. Plasma treatment caused the cracking, removing of the protective skin of alkali-untreated fiber and etching to form a cleaner and rougher surface. The dyeability of both groups of bamboo fiber which are used for composite and textile purposes is significantly enhanced after treatment.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.328-339
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• 2014

In this article, plasma monitoring tools and mulivariate analysis techniques were reviewed. Optical emission spectroscopy was reviewed for a chemical composition analysis tool and RF V-I probe for a physical analysis tool for plasma monitoring. Multivariate analysis techniques are discussed to the sensitivity improvement. Principal component analysis (PCA) is one of the widely adopted multivariate analysis techniques and its application to end-point detection of plasma etching process is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.177-177
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.291-291
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.575-577
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• 1999

In this study, the PPPI(Plasma Polymerized Phenyl Isothiocyanate) resist thin film was manufactured in accordance with the plasma polymerization method and after exposing it to an electron beam, a pattern was formed by plasma etching. With the FT-IR(Fourier transform-infrared spectrometry) analysis, it was confirmed that the PI(Phenl Isothiocyanate) monomer was successsfully produced into a thin film by the plasma. The polymerization rate of the thin film was 450~ 1012($\AA$/min) to 100-200(W) discharge power and 120-12($\AA$/min) to 0.1 ~0.4[torr] system pressure.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

• Textile Coloration and Finishing
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• v.2 no.3
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• pp.8-13
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• 1990

In order to study the modification of wettability, tactility, and bathochromicity of the poly (ethylene Terephthalate) (PET) fabrics, low-temperature plasma$(O_2)$ has been irradiated on the PET fabrics in various conditions. The results obtained from this study were as follows; 1) The weight loss rate of plasma-treated PET fabrics is proportional to irradiation time and internal gas temperature of treating chamber. Also, the effect of weight loss is remarkable at gas pressure ranging from 3 torr to 5 torr. 2) The bathochromic effect of PET fabrics treated with low-temperature plasma$(O_2)$ was improved.