• Korean Journal of Microbiology
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• v.36 no.3
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• pp.221-227
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• 2000

This study was performed to investigate the biological characteristics of twenty isolates of extended spectnlm $\beta$-lactamase (ESBL) producing Klebsiellapnezm~onia collected kom the various clinical specimens of three hospitals in Pusan. Isoelectric focusing (IEF) and PCR were used to determine the types of $\beta$-lactamase gene in this study. Twenty isolates of ESBL producing Klebsiellnp~ieun~or~iae could be divided by PCR, such as TEM type (I1 strains), SHV type (8 strains); non TEM non SHV type (1 strain). In the isoelechic focusing test, the PI of TEM type was 5.2-6.0 and that of SHV type was 6.9-7.4. According to the pI value and PCR bands, twenty strains of ESBL Klebsiellapneumoniae were divided into 5 types: TEM type @I 5.2-6.0; 1080 bp on PCR band), TEM + SHV type (pI 5.2-6.0; andpI 7.0-7.4; 1080 bp and 599 bp on PCR band), SHV type (pl7.0-7.4; 599 bp on PCR band), non TEM non SHV type, and otber type (PCR result was SHV type but pI was not detected).

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.4
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• pp.361-368
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• 2002

The aim of this study was to investigate the effect of preprocessing the transmitted energy spectrum data on development of a robust model to predict the sugar content in intact apples. The spectrum data were measured from 120 Fuji apple samples conveying at the speed of 2 apples per second. Computer algorithms of preprocessing methods such as MSC, SNV, first derivative, OSC and their combinations were developed and applied to the raw spectrum data set. The results indicated that correlation coefficients between the transmitted energy values at each wavelength and sugar contents of apples were significantly improved by the preprocessing of MSC and SNV in particular as compared with those of no-preprocessing. SEPs of the prediction models showed great difference depending on the preprocessing method of the raw spectrum data, the largest of 1.265%brix and the smallest of 0.507% brix. Such a result means that an appropriate preprocessing method corresponding to the characteristics of the spectrum data set should be found or developed for minimizing the prediction errors. It was observed that MSC and SNV are closely related to prediction accuracy, OSC is to number of PLS factors and the first derivative resulted in decrease of the prediction accuracy. A robust calibration model could be d3eveloped by the combined preprocessing of MSC and OSC, which showed that SEP=0.507%brix, bias=0.0327 and R2=0.8823.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.299-303
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• 1993

Erbium metal을 불순물로서 2mol% 첨가한 TlGaS2:Er3+ 단결정을 수평전기로에서 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 결정은 층상으로 이루어진 monoclinic 구조였으며, 10K에서 간접전이형 및 직접전이형 energy band gap은 각각 2.55eV, 2.57eV이었고, Er3+ 이온에 의한 두 개의 불순물 광흡수 peak가 524.9nm와 656.4nm에서 관측되었다. Themally stimulated current(TSC)를 측정하여 0.21eV와 0.38eV의 donor 준위와 0.71eV의 accptor 준위를 구하였다. 10K에서 측정된 photoluminescence(PL) spectrum에서는 632nm와 759nm에서 D-A pair에 의한 broad한 peak와 552, 559, 666, 813, 816, 827nm에서 Er3+ 이온에 의한 sharp한 peak들이 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.121-122
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• 2008

Blue emitting materials have been explored by various researchers. However, blue-emitting materials with high luminous efficiency, good color purity, and thermal stability are still much desired. In this study, we synthesized a new blue luminescent material, $SnDP(HPB)_2$ which is low molecular compound and thermal stability. The PL spectrum of $SnDP(HPB)_2$ was observed blue at the wavelength of 447nm. The ionization potential(IP) and the electron affinity(EA) of $SnDP(HPB)_2$ was measured to be 6.7 eV and 3.0 eV, respectively. The fundamental structure of the OLED was ITO/NPB/$SnDP(HPB)_2/Alq_3$/LiF/Al. As a Result, we obtained to enhance the performance of blue OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.952-954
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• 2003

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on carbazolyl vinylene moiety, 3,3'-(1,4-phenylene di-2,1-ethenediyl) bis[9-ethyl-(E,E)-9H-carbazole](PEEC) and 3,3'-([1,1'-biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[9-ethyl-9H-carbazole](BPEEC), as emitting materials. The ITO/m-MTDATA/NPB/BPEEC/Alq3/LiF/Al device shows bluish-green EL spectrum at 490nm and turn-on voltage at 8V. PEEC shows bluish-green EL around ${\lambda}$ max=496nm and turn-on voltage at 6V and 2.4 Cd/A efficiency in ITO/m-MTDATA/NPB/PEEC/Alq3/LiF/Al device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.378-378
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• 2010

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low, temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, $I_2$ ($D^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak, $I_l^d$, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.242-243
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• 2005

The SrS:Ag, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The XRD patterns indicate a strongly preferential orientation in the [200] direction. The PL spectrum has an emission peak of about 398nm which is assigned by the transition from $4d^{95}s^1$ to $4d^{10}$ of$Ag^+$ center.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.25-26
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• 2009

We design and demonstrate the controlled morphologies of Ag-dpped ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). p-type Ag-doping is ensuired by low temperature photoluminescence (PL) spectrum to find the AoX peak at 3.349 eV. Morphology of grown NWs are controlled by changing the kinetic energy and flux of the ablated particles with adjusting the target - substrate (T-S) distance. The analysis on the resultant NWs is presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.346.2-346.2
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• 2014

To use the GaN based light-emitting diodes (LEDs) as solid state lighting sources, the improvement of light extraction and internal quantum efficiency is essential factors for high brightness LEDs. In this study, we suggested the new materials system of a zinc tin oxide (ZTO) layer formed on blue LED epi-structures to improve the light extraction. ZTO is a representative n-type oxide material consisted of ZnO and SnO system. Moreover, ZTO is one of the promising oxide semiconductor material. Even though ZTO has higher chemical stability than IGZO owing to its SnO2 content this has high mobility and high reliability. After formation of ZTO layer on p-GaN layer by using the spin coating method, structural and optical properties are investigated. The x-ray diffraction (XRD) measurement results show the successful formation of ZTO. The photoluminescence (PL) and absorption spectrum shows that it has 3.6-4.1eV band gap. Finally, the light extraction properties of ZTO/LED chip using electroluminescence (EL) measurement were investigated. The experimental and theoretical analyses were simultaneously conducted.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.700-702
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• 2009

We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.