• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.125-130
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• 2003

TiO$_2$ nanoparticles were prepared by photochemical synthesis in the dry toluene. The shape and size of the amorphous TiO$_2$ nanoparticles were investigated by transmission electron microscope. The particle size was varied by the contents of the titanium (IV) isopropoxide in dry toluene. Especially networked TiO$_2$ particles were formed from 40% titanium (IV) isopropoxide solution. The optical absorption spectra, photoluminescence, and PL excitation spectra of TiO$_2$ in dry toluene were obtained. The were shifted to the short wavelength as the contents of TiO$_2$ were increased. PL excitation had the peak at the wavelength regions is which the absorption increased steeply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

• Journal of Photoscience
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• v.12 no.3
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• pp.171-174
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• 2005

The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.195-197
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• 2002

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. Photoluminescence(PL) spectra of the synthesized CdTe QDs revealed the intensity of PL peaks was stronger as the condensation time was longer. This result was thought because annealing effect by thermal energy transferred during condensation eliminated defects which act as traps and recombination centers in CdTe particle. PL intensity has stron dependence of Te precursor concentration. It confirmed the ratio of Te ion to Cd ion added during synthesis affected the particle size and size distribution of the CdTe QDs. Finally, the synthesized CdTe QDs were identified to be cubic structured CdTe quantum dots by X-ray diffraction(XRD).

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.125.1-125.1
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.237-237
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• 2007

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.359-361
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• 1998

Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.60-61
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• 2005

Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.161-164
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• 2001

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by Photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. Among eight isotropes naturely exiting in ZnO films, only $^{64}Zn$, $^{68}Zn$, $^{70}Zn$ and $^{18}O$ were expected to transmute into $^{65}Cu$, $^{69}Ga$, $^{71}Ga$ and $^{19}F$, respectively. The concentrations of these transmuted atoms were estimated by considering natural abundance, neutron fluence, and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of these ZnO thin film, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation demonstrates the existence of $^{65}Cu$ in the ZnO. In this paper, emission mechanism of Cu impurities wil1 be described and the reason for the absence of the Ga- or F-associated PL peaks will be discussed.